Patents by Inventor Christopher E. Brannon

Christopher E. Brannon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Processes for forming electronic devices including polishing metal-containing layers
    Patent number: 8232209
    Abstract: A process of forming an electronic device can include providing a workpiece. The workpiece can include a substrate, an interlevel dielectric overlying the substrate, a refractory-metal-containing layer over the interlevel dielectric, and a first metal-containing layer over the refractory-metal-containing layer. The first metal-containing layer can include a metal element other than a refractory metal element. The process further includes polishing the first metal-containing layer and the refractory-metal-containing layer as a continuous action to expose the interlevel dielectric. In one embodiment, the metal element can include copper, nickel, or a noble metal. In another embodiment, polishing can be performed using a selectivity agent to reduce the amount of the interlevel dielectric removed.
    Type: Grant
    Filed: February 11, 2011
    Date of Patent: July 31, 2012
    Assignee: Spansion LLC
    Inventors: Christopher E. Brannon, Michael Wedlake, Chris A. Nauert
  • PROCESSES FOR FORMING ELECTRONIC DEVICES INCLUDING POLISHING METAL-CONTAINING LAYERS
    Publication number: 20110136268
    Abstract: A process of forming an electronic device can include providing a workpiece. The workpiece can include a substrate, an interlevel dielectric overlying the substrate, a refractory-metal-containing layer over the interlevel dielectric, and a first metal-containing layer over the refractory-metal-containing layer. The first metal-containing layer can include a metal element other than a refractory metal element. The process further includes polishing the first metal-containing layer and the refractory-metal-containing layer as a continuous action to expose the interlevel dielectric. In one embodiment, the metal element can include copper, nickel, or a noble metal. In another embodiment, polishing can be performed using a selectivity agent to reduce the amount of the interlevel dielectric removed.
    Type: Application
    Filed: February 11, 2011
    Publication date: June 9, 2011
    Applicant: SPANSION LLC
    Inventors: Christopher E. Brannon, Michael Wedlake, Chris A. Nauert
  • Processes for forming electronic devices including polishing metal-containing layers
    Patent number: 7915169
    Abstract: A process of forming an electronic device can include providing a workpiece. The workpiece can include a substrate, an interlevel dielectric overlying the substrate, a refractory-metal-containing layer over the interlevel dielectric, and a first metal-containing layer over the refractory-metal-containing layer. The first metal-containing layer can include a metal element other than a refractory metal element. The process further includes polishing the first metal-containing layer and the refractory-metal-containing layer as a continuous action to expose the interlevel dielectric. In one embodiment, the metal element can include copper, nickel, or a noble metal. In another embodiment, polishing can be performed using a selectivity agent to reduce the amount of the interlevel dielectric removed.
    Type: Grant
    Filed: November 2, 2007
    Date of Patent: March 29, 2011
    Assignee: Spansion LLC
    Inventors: Christopher E. Brannon, Michael Wedlake, Chris A. Nauert
  • PROCESSES FOR FORMING ELECTRONIC DEVICES INCLUDING POLISHING METAL-CONTAINING LAYERS
    Publication number: 20090117734
    Abstract: A process of forming an electronic device can include providing a workpiece. The workpiece can include a substrate, an interlevel dielectric overlying the substrate, a refractory-metal-containing layer over the interlevel dielectric, and a first metal-containing layer over the refractory-metal-containing layer. The first metal-containing layer can include a metal element other than a refractory metal element. The process further includes polishing the first metal-containing layer and the refractory-metal-containing layer as a continuous action to expose the interlevel dielectric. In one embodiment, the metal element can include copper, nickel, or a noble metal. In another embodiment, polishing can be performed using a selectivity agent to reduce the amount of the interlevel dielectric removed.
    Type: Application
    Filed: November 2, 2007
    Publication date: May 7, 2009
    Applicant: SPANSION LLC
    Inventors: Christopher E. Brannon, Michael Wedlake, Chris A. Nauert