Patents by Inventor Christopher F. Bevis
Christopher F. Bevis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11823883Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.Type: GrantFiled: November 19, 2021Date of Patent: November 21, 2023Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Christopher F. Bevis, Yungman Alan Liu, David Allen Reed, Eli Cheifetz, Amit Weingarten, Alexander Kadyshevitch
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Patent number: 11474016Abstract: A particle monitoring device includes a camera sensor for imaging particles, a set of light sources, and an optical component. A first light source provides light of a first color component. A second light source provides light of a second color component. The optical component receives light of the first color component in a first direction from the first light source, and redirects the light of the first color component in an output direction towards the particles to illuminate the particles using light of the first color component. The optical component receives light of a second color component in a second direction, different from the first direction, from the second light source, and redirects the light of the second color component in the output direction towards the particles to illuminate the particles using light of the second color component.Type: GrantFiled: September 22, 2020Date of Patent: October 18, 2022Assignee: SCANIT TECHNOLOGIES, INC.Inventors: Joel Kent, Christopher F. Bevis
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Publication number: 20220223395Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.Type: ApplicationFiled: November 19, 2021Publication date: July 14, 2022Inventors: Christopher F. BEVIS, Yungman Alan LIU, David Allen REED, Eli CHEIFETZ, Amit WEINGARTEN, Alexander KADYSHEVITCH
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Patent number: 11183377Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.Type: GrantFiled: May 12, 2017Date of Patent: November 23, 2021Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Christopher F. Bevis, Yungman Alan Liu, David Allen Reed, Eli Cheifetz, Amit Weingarten, Alexander Kadyshevitch
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Publication number: 20200066502Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.Type: ApplicationFiled: May 12, 2017Publication date: February 27, 2020Inventors: Christopher F. BEVIS, Yungman Alan LIU, David Allen REED, Eli CHEIFETZ, Amit WEINGARTEN, Alexander KADYSHEVITCH
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Patent number: 9607802Abstract: One embodiment relates to an apparatus for aberration correction in an electron beam lithography system. An inner electrode surrounds a pattern generating device, and there is at least one outer electrode around the inner electrode. Each of the inner and outer electrodes has a planar surface in a plane of the pattern generating device. Circuitry is configured to apply an inner voltage level to the inner electrode and at least one outer voltage level to the at least one outer electrode. The voltage levels may be set to correct a curvature of field in the electron beam lithography system. Another embodiment relates to an apparatus for aberration correction used in an electron based system, such as an electron beam inspection, or review, or metrology system. Other embodiments, aspects and features are also disclosed.Type: GrantFiled: December 11, 2014Date of Patent: March 28, 2017Assignee: KLA-Tencor CorporationInventor: Christopher F. Bevis
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Publication number: 20160172151Abstract: One embodiment relates to an apparatus for aberration correction in an electron beam lithography system. An inner electrode surrounds a pattern generating device, and there is at least one outer electrode around the inner electrode. Each of the inner and outer electrodes has a planar surface in a plane of the pattern generating device. Circuitry is configured to apply an inner voltage level to the inner electrode and at least one outer voltage level to the at least one outer electrode. The voltage levels may be set to correct a curvature of field in the electron beam lithography system. Another embodiment relates to an apparatus for aberration correction used in an electron based system, such as an electron beam inspection, or review, or metrology system. Other embodiments, aspects and features are also disclosed.Type: ApplicationFiled: December 11, 2014Publication date: June 16, 2016Inventor: Christopher F. BEVIS
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Patent number: 8933425Abstract: One embodiment relates to an apparatus for aberration correction in an electron beam lithography system. An inner electrode surrounds a pattern generating device, and there is at least one outer electrode around the inner electrode. Each of the inner and outer electrodes has a planar surface in a plane of the pattern generating device. Circuitry is configured to apply an inner voltage level to the inner electrode and at least one outer voltage level to the at least one outer electrode. The voltage levels may be set to correct a curvature of field in the electron beam lithography system. Another embodiment relates to an apparatus for aberration correction used in an electron based system, such as an electron beam inspection, or review, or metrology system. Other embodiments, aspects and features are also disclosed.Type: GrantFiled: November 2, 2011Date of Patent: January 13, 2015Assignee: KLA-Tencor CorporationInventor: Christopher F. Bevis
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Patent number: 8831767Abstract: Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals.Type: GrantFiled: August 27, 2011Date of Patent: September 9, 2014Assignee: KLA-Tencor Technologies Corp.Inventors: Kurt Lehman, Charles Chen, Ronald L. Allen, Robert Shinagawa, Anantha Sethuraman, Christopher F. Bevis, Thanassis Trikas, Haiguang Chen, Ching Ling Meng
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Patent number: 8692204Abstract: One embodiment disclosed relates a method of detecting a patterned electron beam. The patterned electron beam is focused onto a grating with a pattern that has a same pitch as the patterned electron beam. Electrons of the patterned electron beam that pass through the grating un-scattered are detected. Another embodiment relates to focusing the patterned electron beam onto a grating with a pattern that has a second pitch that is different than a first pitch of the patterned electron beam. Electrons of the patterned electron beam that pass through the grating form a Moiré pattern that is detected using a position-sensitive detector. Other embodiments, aspects and features are also disclosed.Type: GrantFiled: April 23, 2012Date of Patent: April 8, 2014Assignee: KLA-Tencor CorporationInventors: Shinichi Kojima, Christopher F. Bevis, Joseph Maurino, William M. Tong
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Patent number: 8422010Abstract: Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.Type: GrantFiled: September 12, 2012Date of Patent: April 16, 2013Assignee: KLA-Tencor Technologies Corp.Inventors: Michael D. Kirk, Christopher F. Bevis, David Adler, Kris Bhaskar
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Publication number: 20130035877Abstract: Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.Type: ApplicationFiled: September 12, 2012Publication date: February 7, 2013Applicant: KLA-TENCOR TECHNOLOGIES CORPORATIONInventors: Michael D. Kirk, Christopher F. Bevis, David Adler, Kris Bhaskar
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Publication number: 20120281275Abstract: Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.Type: ApplicationFiled: July 19, 2012Publication date: November 8, 2012Applicant: KLA-TENCOR CORPORATIONInventors: Ady Levy, Samuel Ngai, Christopher F. Bevis, Stefano Concina, John Fielden, Walter Mieher, Dieter Mueller, Neil Richardson, Dan Wack, Larry Wagner
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Publication number: 20120273686Abstract: One embodiment disclosed relates a method of detecting a patterned electron beam. The patterned electron beam is focused onto a grating with a pattern that has a same pitch as the patterned electron beam. Electrons of the patterned electron beam that pass through the grating un-scattered are detected. Another embodiment relates to focusing the patterned electron beam onto a grating with a pattern that has a second pitch that is different than a first pitch of the patterned electron beam. Electrons of the patterned electron beam that pass through the grating form a Moiré pattern that is detected using a position-sensitive detector. Other embodiments, aspects and features are also disclosed.Type: ApplicationFiled: April 23, 2012Publication date: November 1, 2012Inventors: Shinichi KOJIMA, Christopher F. BEVIS, Joseph MAURINO, William M. TONG
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Patent number: 8284394Abstract: Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.Type: GrantFiled: February 9, 2007Date of Patent: October 9, 2012Assignee: KLA-Tencor Technologies Corp.Inventors: Michael D. Kirk, Christopher F. Bevis, David Adler, Kris Bhaskar
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Publication number: 20120085919Abstract: One embodiment relates to an apparatus for writing a pattern on a target substrate. The apparatus includes a plurality of arrays of pixel elements, each array being offset from the other arrays. In addition, the apparatus includes a source and lenses for generating an incident beam that is focused onto the plurality of arrays, and circuitry to control the pixel elements of each array to selectively reflect pixel portions of the incident beam to form a patterned beam. The apparatus further includes a projector for projecting the patterned beam onto the target substrate. Other features, aspects and embodiments are also disclosed.Type: ApplicationFiled: October 8, 2010Publication date: April 12, 2012Inventors: Shinichi KOJIMA, Christopher F. BEVIS, Allen M. CARROLL
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Publication number: 20110313558Abstract: Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals.Type: ApplicationFiled: August 27, 2011Publication date: December 22, 2011Applicant: KLA-TENCOR TECHNOLOGIES CORPORATIONInventors: Kurt Lehman, Charles Chen, Ronald L. Allen, Robert Shinagawa, Anantha Sethuraman, Christopher F. Bevis, Thanassis Trikas, Haiguang Chen, Ching Ling Meng
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Patent number: 8010222Abstract: Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals.Type: GrantFiled: February 15, 2008Date of Patent: August 30, 2011Assignee: KLA-Tencor Technologies Corp.Inventors: Kurt Lehman, Charles Chen, Ronald L. Allen, Robert Shinagawa, Anantha Sethuraman, Christopher F. Bevis, Thanassis Trikas, Haiguang Chen, Ching Ling Meng
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Patent number: 7940386Abstract: Embodiments of the invention include a target having a lattice of many periodically spaced and uniformly configured metrology features arranged in an array pattern over a target region. The lattice includes at least one defect region in the lattice, the defect region includes at least one intentionally introduced defect metrology feature. The defect feature configured to enable increased sensitivity of the target to a selected parameter of interest. The invention further encompassing associated methods of implementing the target and evaluating the parameter of interest.Type: GrantFiled: August 30, 2007Date of Patent: May 10, 2011Assignee: KLA-Tencor CorporationInventor: Christopher F. Bevis
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Patent number: 7933016Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a ?1st diffraction order and a +1st diffraction order.Type: GrantFiled: December 18, 2009Date of Patent: April 26, 2011Assignee: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanevsky, Michael Friedmann, Ian Smith, Michael Adel, Anatoly Fabrikant, Christopher F. Bevis, John Fielden, Noah Bareket, Kenneth P. Gross, Piotr Zalicki, Dan Wack, Paola Dececco, Thaddeus G. Dziura, Mark Ghinovker