Abstract: An endpoint detection system for use in detecting an endpoint of a refurbishment process for process chamber components. The refurbishment process involves use of an etchant bath to etch or clean chamber components after their use a reaction chamber in semiconductor processing to remove deposited materials including oxide films or the like. The endpoint detection system is configured to use measurements of reflected electromagnetic radiation from surfaces of the component in an etchant bath, transmitted electromagnetic radiation passing through holes in the chamber component while the component is in the etchant bath, or both to detect process endpoints. The process endpoints can coincide with a desired amount of removal of the deposited materials from surfaces and/or through holes in the chamber component. Upon detection of the endpoints, the chamber component can be removed from the etchant to limit over etching of materials from the chamber component to increase useful life.

Abstract: A chamber arrangement includes an outer chamber and an inner chamber. The outer chamber has a hollow interior. The inner chamber is sized and dimensioned for placement within the interior of the outer chamber and may seat therein a workpiece to form a coating onto the workpiece, such as a substrate support structure for a semiconductor processing system. An electrical connector is seated in a wall of the outer chamber and fluidly separates the interior of the outer chamber from an external environment outside of the outer chamber to provide an electrical communication between the workpiece and the external environment outside of the outer chamber, such as for heating the workpiece and/or controlling temperature of the workpiece during the forming of the coating onto the workpiece. Coating systems and methods of forming coatings are also described.

Abstract: A pulse valve manifold (PVM) assembly includes a PVM. The PVM is formed from two or less manifold parts. The PVM includes a pipe section having an entry inlet to enable a reactant to enter the PVM, a rectangular block section having a top surface and a bottom surface, wherein the top surface is connected to the pipe section, and a base section connected to the bottom surface having an outlet to flow the reactant gas out to a showerhead. A single part PVM may be formed using additive manufacturing (such as 3D printing). Alternatively, a two-part PVM may be formed having a top section including the pipe section and a bottom section including the base. The PVM further includes a wetted path that flows a reactant gas from the entry inlet to the outlet, and the wetted path may include a helical section.

Abstract: Methods and apparatuses for adjusting a process chamber volume are described. For example, a process chamber, after removing at least a component used to perform a function associated with the process chamber, may be installed with a fixture to adjust a volume of the process chamber. The process chamber with the fixture may reduce the amount of precursor gasses and processing time for coating a workpiece. The workpiece, after the coating, may be placed in another process chamber to perform a function associated with the other process chamber.

Abstract: An endpoint detection system for use in detecting an endpoint of a refurbishment process for process chamber components. The refurbishment process involves use of an etchant bath to etch or clean chamber components after their use a reaction chamber in semiconductor processing to remove deposited materials including oxide films or the like. The endpoint detection system is configured to use measurements of reflected electromagnetic radiation from surfaces of the component in an etchant bath, transmitted electromagnetic radiation passing through holes in the chamber component while the component is in the etchant bath, or both to detect process endpoints. The process endpoints can coincide with a desired amount of removal of the deposited materials from surfaces and/or through holes in the chamber component. Upon detection of the endpoints, the chamber component can be removed from the etchant to limit over etching of materials from the chamber component to increase useful life.

Abstract: An endpoint detection system for use in detecting an endpoint of a refurbishment process for process chamber components. The refurbishment process involves use of an etchant bath to etch or clean chamber components after their use a reaction chamber in semiconductor processing to remove deposited materials including oxide films or the like. The endpoint detection system is configured to use measurements of reflected electromagnetic radiation from surfaces of the component in an etchant bath, transmitted electromagnetic radiation passing through holes in the chamber component while the component is in the etchant bath, or both to detect process endpoints. The process endpoints can coincide with a desired amount of removal of the deposited materials from surfaces and/or through holes in the chamber component. Upon detection of the endpoints, the chamber component can be removed from the etchant to limit over etching of materials from the chamber component to increase useful life.

Abstract: Methods and apparatuses for adjusting a process chamber volume are described. For example, a process chamber, after removing at least a component used to perform a function associated with the process chamber, may be installed with a fixture to adjust a volume of the process chamber. The process chamber with the fixture may reduce the amount of precursor gases and processing time for coating a workpiece. The workpiece, after the coating, may be placed in another process chamber to perform a function associated with the other process chamber.

Abstract: In an aspect, disclosed herein are a methods, systems and apparatus for modifying a component surface comprising, contacting the surface, with an laser beam, the surface comprising a semiconductor tool manufacturing component; modifying the surface responsive to the contacting, wherein the modifying the surface comprises forming, by micro-machining, etching, ablating, ionizing, anodizing, oxidizing, texturing, or roughening, or a combination thereof, a functional feature in the surface.

Abstract: An inspection fixture includes a seat to support a workpiece, a backpressure sensor and a focal plane array. The backpressure sensor is coupled to seat to acquire backpressure of a fluid traversing one of a first flow aperture and a second flow aperture defined in the workpiece supported on the seat of the inspection fixture. The optical focal plane array is also coupled to the seat to acquire optical image data of a portion of the workpiece including one or more of the first flow aperture and the second flow aperture defined in the workpiece supported on the seat of the inspection fixture. Inspection systems, inspection methods, and computer program products for inspecting workpieces are also described.

Abstract: Methods and apparatuses for adjusting a process chamber volume are described. For example, a process chamber, after removing at least a component used to perform a function associated with the process chamber, may be installed with a fixture to adjust a volume of the process chamber. The process chamber with the fixture may reduce the amount of precursor gases and processing time for coating a workpiece. The workpiece, after the coating, may be placed in another process chamber to perform a function associated with the other process chamber.