Abstract: In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, wherein the third sub-layer is adjacent to the light emitting layer. The electrical contact can be coupled to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. The first, second and third sub-layers, the light emitting layer, and the second layer can each comprise a superlattice.

Abstract: The present invention presents an interactive communication training device that can be thrown and caught. The communication training device includes an information display viewable from outside the device, a microphone, a wireless transceiver and a microcontroller. A battery is contained inside the device to power electronic components. The microcontroller performs speech recognition to detect equivalence between speech information present in the microphone signal, and the information shown on the information display. Certain implementations may provide results of analytical speech processing applied to events of detected equivalence between speech information and the information shown on the information display.

Abstract: In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, wherein the third sub-layer is adjacent to the light emitting layer. The electrical contact can be coupled to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. The first, second and third sub-layers, the light emitting layer, and the second layer can each comprise a superlattice.

Abstract: In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, wherein the third sub-layer is adjacent to the light emitting layer. The electrical contact can be coupled to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. The first, second and third sub-layers, and the light emitting layer can each comprise a superlattice. The second layer can comprise a chirped superlattice.

Abstract: In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, wherein the third sub-layer is adjacent to the light emitting layer. The electrical contact can be coupled to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. The first, second and third sub-layers, and the light emitting layer can each comprise a superlattice. The second layer can comprise a chirped superlattice.

Abstract: In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, where the third sub-layer is adjacent to the light emitting layer. The electrical contact to the first set of doped layers can be made to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. In some cases, the second sub-layer can absorb more light emitted from the light emitting layer than the first or third sub-layers.

Abstract: Methods and systems are described for machine learning algorithms that dynamically allocate traffic to contact strategies that are performing well, while allocating less traffic to contact strategies that are underperforming. In particular, the methods and systems discussed are for the use of a contextual multi-armed bandit framework for applications that have both immediate results and long-term results, in which immediate results are correlated with the long-term results (e.g., results related to debt collection strategies).

Abstract: In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, where the third sub-layer is adjacent to the light emitting layer. The electrical contact to the first set of doped layers can be made to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. In some cases, the second sub-layer can absorb more light emitted from the light emitting layer than the first or third sub-layers.

Abstract: A chair can include armrest apparatuses. Each of the armrest apparatuses can be configured so an arm pad is connectable to an armrest without the use of a mechanical fastener (e.g. a screw, a bolt, etc.) and without the use of an adhesive or welding, and without the use of mechanical tools (e.g. screw driver, hammer, etc.) by use of interlocking mating profiles defined in the structure of the arm pad and structure of the armrest to which the arm pad is attached. Embodiments of the chair can be configured as a side chair, task chair, or other type of chair having at least one armrest or other type of armrest apparatus.

Abstract: A chair can include armrest apparatuses. Each of the armrest apparatuses can be configured so an arm pad is connectable to an armrest without the use of a mechanical fastener (e.g. a screw, a bolt, etc.) and without the use of an adhesive or welding, and without the use of mechanical tools (e.g. screw driver, hammer, etc.) by use of interlocking mating profiles defined in the structure of the arm pad and structure of the armrest to which the arm pad is attached. Embodiments of the chair can be configured as a side chair, task chair, or other type of chair having at least one armrest or other type of armrest apparatus.

Abstract: A chair can include armrest apparatuses. Each of the armrest apparatuses can be configured so an arm pad is connectable to an armrest without the use of a mechanical fastener (e.g. a screw, a bolt, etc.) and without the use of an adhesive or welding, and without the use of mechanical tools (e.g. screw driver, hammer, etc.) by use of interlocking mating profiles defined in the structure of the arm pad and structure of the armrest to which the arm pad is attached. Embodiments of the chair can be configured as a side chair, task chair, or other type of chair having at least one armrest or other type of armrest apparatus.

Abstract: A chair can include armrest apparatuses. Each of the armrest apparatuses can be configured so an arm pad is connectable to an armrest without the use of a mechanical fastener (e.g. a screw, a bolt, etc.) and without the use of an adhesive or welding, and without the use of mechanical tools (e.g. screw driver, hammer, etc.) by use of interlocking mating profiles defined in the structure of the arm pad and structure of the armrest to which the arm pad is attached. Embodiments of the chair can be configured as a side chair, task chair, or other type of chair having at least one armrest or other type of armrest apparatus.

Abstract: Various ultraviolet (UV) reactors and their methods of fabrication are disclosed. One exemplary process comprises forming a set of parallel channels in a slab of ultraviolet transparent material. The process also comprises providing a reactor substrate with an input manifold and an output manifold. The process also comprises joining the slab of ultraviolet transparent material and the reactor substrate. The input manifold, output manifold, and set of parallel channels are in fluid communication after the joining step. The process also comprises providing a planar ultraviolet light source isolated from the set of parallel channels by the shaped slab of ultraviolet-transparent material. The set of parallel channels and a defining plane of the planar ultraviolet light source are parallel in the assembled ultraviolet reactor.

Abstract: A sub-cranial vibratory stimulator that at least partially bypasses a recipient's skull bone and delivers vibration to fluid within a recipient's skull bone. The sub-cranial vibratory stimulator comprises an actuator that is configured to be implanted beneath a recipient's skull bone. The actuator transfers vibration to the fluid within the recipient's skull without first passing through the skull bone. The actuator is also substantially mechanically decoupled (isolated) from the recipient's skull bone.

Abstract: Various ultraviolet (UV) reactors and their methods of fabrication are disclosed. One exemplary process comprises forming a set of parallel channels in a slab of ultraviolet transparent material. The process also comprises providing a reactor substrate with an input manifold and an output manifold. The process also comprises joining the slab of ultraviolet transparent material and the reactor substrate. The input manifold, output manifold, and set of parallel channels are in fluid communication after the joining step. The process also comprises providing a planar ultraviolet light source isolated from the set of parallel channels by the shaped slab of ultraviolet-transparent material. The set of parallel channels and a defining plane of the planar ultraviolet light source are parallel in the assembled ultraviolet reactor.

Abstract: A method of forming contacts to an n-type layer and a p-type layer of a semiconductor device includes depositing a dielectric layer on the n-type layer and the p-type layer. A pattern is formed in the dielectric layer, the pattern having a plurality of metal contact patterns for the semiconductor device. A first metal layer is deposited into the plurality of metal contact patterns, and a second metal layer is deposited directly on the first metal layer. External contacts for the semiconductor device are formed, where the external contacts include the second metal layer.

Abstract: A method of forming contacts to an n-type layer and a p-type layer of a semiconductor device includes depositing a dielectric layer on the n-type layer and the p-type layer. A pattern is formed in the dielectric layer, the pattern having a plurality of metal contact patterns for the semiconductor device. A first metal layer is deposited into the plurality of metal contact patterns, and a second metal layer is deposited directly on the first metal layer. External contacts for the semiconductor device are formed, where the external contacts include the second metal layer.

Abstract: A method of forming contacts to an n-type layer and a p-type layer of a semiconductor device includes depositing a dielectric layer on the n-type layer and the p-type layer. A pattern is formed in the dielectric layer, the pattern having a plurality of metal contact patterns for the semiconductor device. A first metal layer is deposited into the plurality of metal contact patterns, and a second metal layer is deposited directly on the first metal layer. External contacts for the semiconductor device are formed, where the external contacts include the second metal layer.

Abstract: A sub-cranial vibratory stimulator that at least partially bypasses a recipient's skull bone and delivers vibration to fluid within a recipient's skull bone. The sub-cranial vibratory stimulator comprises an actuator that is configured to be implanted beneath a recipient's skull bone. The actuator transfers vibration to the fluid within the recipient's skull without first passing through the skull bone. The actuator is also substantially mechanically decoupled (isolated) from the recipient's skull bone.

Abstract: Methods, systems, and devices for determining control settings used by a hearing prosthesis to process a sound are disclosed. A first model output based on control settings is received by a computing device configured to fit the hearing prosthesis to a user. A difference between the first model output and a reference output based on normal human hearing at a target frequency is determined. If the difference between the first model output and the reference output at the target frequency is within a specification, the computing device sends a signal to the hearing prosthesis that includes information indicative of the control settings.