Patents by Inventor Christopher G. Quentin

Christopher G. Quentin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a controlled and uniform lightly phosphorous doped silicon film
    Patent number: 7335266
    Abstract: Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.
    Type: Grant
    Filed: September 16, 2005
    Date of Patent: February 26, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Li Fu, Sheeba J. Panayil, Shulin Wang, Christopher G. Quentin, Lee Luo, Aihua Chen, Xianzhi Tao
  • Method of forming a controlled and uniform lightly phosphorous doped silicon film
    Patent number: 6982214
    Abstract: Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.
    Type: Grant
    Filed: October 1, 2002
    Date of Patent: January 3, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Li Fu, Sheeba J. Panayil, Shulin Wang, Christopher G. Quentin, Lee Luo, Aihua Chen, Xianzhi Tao
  • Method of forming a controlled and uniform lightly phosphorous doped silicon film
    Publication number: 20040063301
    Abstract: Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.
    Type: Application
    Filed: October 1, 2002
    Publication date: April 1, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Li Fu, Sheeba J. Panayil, Shulin Wang, Christopher G. Quentin, Lee Luo, Aihua Chen, Xianzhi Tao
  • Method of annealing an oxide film
    Publication number: 20030124873
    Abstract: The present invention is a method of annealing an oxide film. According to the present invention, an oxide film is deposited over a substrate. The oxide film is then annealed by exposing the oxide film to an ambient containing atomic oxygen for a predetermined period of time. In an embodiment of the present invention, the ambient containing atomic oxygen (O) is formed in the chamber by reacting a hydrogen containing gas and an oxygen containing gas together. In another embodiment of the present invention, the ambient containing atomic oxygen (O) is formed by decomposing N2O.
    Type: Application
    Filed: December 28, 2001
    Publication date: July 3, 2003
    Inventors: Guangcai Xing, Lee Luo, Aihua (Steven) Chen, Errol Antonio C. Sanchez, Christopher G. Quentin, Kuan-Ting (James) Lin, Shih-Che (Jeff) Lin