Abstract: An apparatus comprises an electrostatic chuck including a plate electrode and a column structure coupled with the plate electrode. A disk is coupled with the electrostatic chuck where the disk includes a first hole in a center of the disk and a second hole and a third hole distributed through the disk, where a portion of the column structure extends through the first hole. The apparatus further includes retention structures, wherein the retention structures individually include a shaft and a nut coupled with the shaft and the disk. The shaft extends through the second hole or the third hole and couples with a surface of the plate electrode.

Abstract: This disclosure pertains to pedestal assemblies for supporting wafers in semiconductor manufacturing tools and chambers. Such pedestal assemblies may have an edge purge system that includes an axially symmetric first plenum volume that includes at 2024/073447 least a first radial sub-volume, a first axial sub-volume, and a second radial sub-volume. The first axial sub-volume may be fluidically interposed between the first radial sub-volume and the second radial sub-volume. An optional second plenum volume may be provided as well and may be used to fluidically connect a region of a wafer support that is part of the pedestal assembly with a vacuum port to allow the wafer support to provide vacuum clamping functionality.

Abstract: A wafer chuck assembly is disclosed, in accordance with at least one embodiment. In at least one embodiment, wafer chuck assembly comprises a wafer chuck comprising a substantially circular surface having a first area. In least one embodiment, plurality of mesas is distributed over the wafer chuck surface. In at least one embodiment, individual ones of the plurality of mesas extend a height above the wafer chuck surface. In at least one embodiment, plurality of mesas has a contact surface having a second area that is at least 3% of the first area.

Abstract: Various systems and methods are provided to prevent backside deposition on a substrate by using a combination of approaches. The approaches include clamping the substrate to a pedestal and/or supplying purge gases to an area where deposition is not desired. The clamping methods include electrostatic or vacuum clamping. In addition, various pedestal and edge ring designs are provided for supplying purge gases to the area where deposition is not desired. The use of clamping in conjunction with purging can further enhance the performance without affecting deposition of materials on front side of the substrate. The clamping along the edge of the substrate can be made more effective by machining an upper surface of the pedestal to have a slight dish or dome like shape (i.e., concave or convex, respectively).

Abstract: A pedestal assembly for a substrate processing system includes a pedestal including a pedestal plate with a plurality of gas through holes and a stem extending downwardly from the pedestal plate. The plurality of gas through holes extend from a first surface of the pedestal plate to a second surface of the pedestal plate at a location radially outside of the stem. A collar is arranged around the stem of the pedestal and openings of the plurality of gas through holes are located on the second surface of the pedestal. The collar defines an annular volume between the collar and the stem of the pedestal. An upwardly facing surface of the collar makes a surface-to-surface seal with the second surface of the pedestal.

Abstract: A baseplate for a substrate support includes a heater layer configured to selectively heat the baseplate and a heat spreader disposed between the heater layer and an upper surface of the baseplate. The heat spreader is configured to distribute heat provided by the heater layer throughout the baseplate. The baseplate includes a first material that has a first coefficient of thermal expansion (CTE) and a first thermal conductivity. The heat spreader includes a second material that has a second CTE and a second thermal conductivity greater than the first thermal conductivity.

Abstract: A substrate support for a substrate processing system configured to perform a deposition process on a substrate includes a pedestal having an upper surface configured to support a substrate and N heating layers vertically-stacked within the pedestal below the upper surface. Each of the N heating layers includes a respective resistive heating element. A watt density of the resistive heating element in at least one of the N heating layers varies in at least one radial zone of the substrate support relative to other radial zones of the substrate support.

Abstract: Apparatuses and methods for cooling and transferring wafers from low pressure environment to high pressure environment are provided. An apparatus may include a cooling pedestal and a set of supports for holding the wafer above the cooling pedestal. The average gap between the wafer and the cooling pedestal may be no greater than about 0.010 inches. Venting gases may be used to increase the pressure inside the apparatus during the transfer. In certain embodiment, venting gases comprise nitrogen.

Abstract: Methods that increase the overall rate of heat transfer between a substrate and a heat sink or source, e.g., in a loadlock are provided. According to various embodiments, the methods involve varying the heat transfer coefficient of a heat transfer gas in the loadlock or other chamber. The heat transfer coefficient is varied to reduce the time-dependent variation of the rate of heat transfer. As a result, the overall rate of heat transfer is improved. In certain embodiments, the methods involve varying the gas pressure of a chamber in order to affect the rate of heat transfer to a wafer within a system. By manipulating the gas pressure accordingly, the rate of heat transfer is controlled throughout the heating or cooling cycle.

Abstract: The present invention provides methods and apparatuses for removing unwanted film from the edge area of substrate using remotely-generated plasmas. Activated plasma species are directed to the edge of the substrate to contact and remove the unwanted film, while intrusion of the activated species to areas above the active circuit region (where the film is desired) is suppressed. In certain embodiments, intrusion of the activated species is suppressed by the use of a purge gas and/or the use of materials that promote recombination of plasma species. In particular embodiments, atomic oxygen is used to remove ashable films from the edge of semiconductor wafers.

Abstract: Apparatuses and methods for cooling and transferring wafers from low pressure environment to high pressure environment are provided. An apparatus may include a cooling pedestal and a set of supports for holding the wafer above the cooling pedestal. The average gap between the wafer and the cooling pedestal may be no greater than about 0.010 inches. Venting gases may be used to increase the pressure inside the apparatus during the transfer. In certain embodiment, venting gases comprise nitrogen.

Abstract: Apparatuses and methods for cooling and transferring wafers from low pressure environment to high pressure environment are provided. An apparatus may include a cooling pedestal and a set of supports for holding the wafer above the cooling pedestal. The average gap between the wafer and the cooling pedestal may be no greater than about 0.010 inches. Venting gases may be used to increase the pressure inside the apparatus during the transfer. In certain embodiment, venting gases comprise nitrogen.