Abstract: The disclosure pertains to a photoresist composition and a method of using the photoresist in the fabrication of reticles or features on a semiconductor substrate. The photoresist composition and the method are designed to reduce the variation in critical dimension of features across a surface of a substrate, where the variation in critical dimension is a result of localized resist loading. The photoresist composition is useful when the imaging system is G-line, H-line, or I-line, and the photoresist composition includes a sensitizer which works in combination with a DUV photoresist including a PAC, to sensitize the photoresist to the G-line, H-line and I-line imaging.

Abstract: Systems and methods for gray scale lithography for defining edges such as on microelectronic device patterns during integrated circuit fabrication are disclosed. Methods for critical dimension edge placement and slope enhancement utilize central pixel dose addition or modulated inner pixels. A method for gray scale lithography for defining edges of features generally comprises identifying a center pixel of a feature, exposing the general width of the feature including the identified center pixel with full doses, and enhancing the identified center pixel by exposing the identified center pixel with additional dose to accurately place the edge of the feature, whereby the edge of the feature is defined and moved by exposing the center pixel with the additional dose.

Abstract: A scanning system uses a multi-beam brush having a widely separated beams, a modulator that controls intensity of pixels in scan beams, an optical system that minimizes scan line bow at the expense of non-uniform scanning beam velocity, and a timing generator that generates a pixel clock signal having a variable period that compensates for the non-uniformity of pixel velocity. The wide separation of scan beams permits the modulator to turn beams on or off with a direction of brightening or darkening in the cross-section of the beams being opposite to the scanning direction. A novel arrangement of the beams in the brush permits a uniform indexing step size to uniformly expose an image region.

Abstract: A semiconductor fabrication gray level photolithography strategy, in which the energy beam intensities corresponding to each gray level are selected from a set of non-linear, non-monotonic intensities. Rasterized geometric shape edges are defined by associating one or more intermediate gray levels with pixels in at least one row of pixels. The geometric shape is printed or imaged on an energy sensitive layer by modulating an energy beam to the intensity corresponding to the associated gray level, and directing the modulated beam to the pixel location on the layer. The intensities corresponding to the gray levels are selected so as to optimize critical dimension (CD) characteristics and other printing features.

Abstract: An apparatus for etching a metal-containing material of a lithographic mask has a chamber with a support for supporting the mask inside the chamber. Over the metal-containing material, the mask comprises a resist layer having features with sidewalls. A gas distributor, gas energizer, and gas exhaust are provided. A controller is provided that is adapted to control one or more of the gas distributor, gas energizer, and gas exhaust to (i) deposit a sacrificial coating on the sidewalls of the features in the resist layer, and (ii) etch the metal-containing material of the mask. Coincidental etching of the sidewalls of the features in the resist layer overlying the metal-containing material is reduced by the sacrificial coating formed thereon.

Abstract: A scanning system uses a multi-beam brush having a widely separated beams, a modulator that controls intensity of pixels in scan beams, an optical system that minimizes scan line bow at the expense of non-uniform scanning beam velocity, and a timing generator that generates a pixel clock signal having a variable period that compensates for the non-uniformity of pixel velocity. The wide separation of scan beams permits the modulator to turn beams on or off with a direction of brightening or darkening in the cross-section of the beams being opposite to the scanning direction. A novel arrangement of the beams in the brush permits a uniform indexing step size to uniformly expose an image region.

Abstract: Systems and methods for gray scale lithography for defining edges such as on microelectronic device patterns during integrated circuit fabrication are disclosed. Methods for critical dimension edge placement and slope enhancement utilize central pixel dose addition or modulated inner pixels. A method for gray scale lithography for defining edges of features generally comprises identifying a center pixel of a feature, exposing the general width of the feature including the identified center pixel with full doses, and enhancing the identified center pixel by exposing the identified center pixel with additional dose to accurately place the edge of the feature, whereby the edge of the feature is defined and moved by exposing the center pixel with the additional dose.

Abstract: A scanning system uses a multi-beam brush having a widely separated beams, a modulator that controls intensity of pixels in scan beams, an optical system that minimizes scan line bow at the expense of non-uniform scanning beam velocity, and a timing generator that generates a pixel clock signal having a variable period that compensates for the non-uniformity of pixel velocity. The wide separation of scan beams permits the modulator to turn beams on or off with a direction of brightening or darkening in the cross-section of the beams being opposite to the scanning direction. A novel arrangement of the beams in the brush permits a uniform indexing step size to uniformly expose an image region.

Abstract: The disclosure pertains to a photoresist composition and a method of using the photoresist in the fabrication of reticles or features on a semiconductor substrate. The photoresist composition and the method are designed to reduce the variation in critical dimension of features across a surface of a substrate, where the variation in critical dimension is a result of localized resist loading. The photoresist composition is useful when the imaging system is G-line, H-line, or I-line, and the photoresist composition includes a sensitizer which works in combination with a DUV photoresist including a PAC, to sensitize the photoresist to the G-line, H-line and I-line imaging.