Patents by Inventor Christopher Hans Lansford

Christopher Hans Lansford has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit wafer system with control strategy
    Patent number: 8110412
    Abstract: An integrated circuit wafer system includes an integrated circuit wafer, measuring thicknesses of the integrated circuit wafer, calculating a change in temperature ramp rates and thickness offsets for subsequent processing based on the temperature ramp rates for prior processing and the resultant thicknesses, and calculating an average temperature and deposition time for subsequent processing based on calculated changes in temperature ramp rates, coupled with the average temperature, deposition time for prior processing, and the resultant thicknesses.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: February 7, 2012
    Assignee: Spansion LLC
    Inventors: Christopher Hans Lansford, Qinghua He
  • INTEGRATED CIRCUIT WAFER SYSTEM WITH CONTROL STRATEGY
    Publication number: 20080153180
    Abstract: An integrated circuit wafer system includes an integrated circuit wafer, measuring thicknesses of the integrated circuit wafer, calculating a change in temperature ramp rates and thickness offsets for subsequent processing based on the temperature ramp rates for prior processing and the resultant thicknesses, and calculating an average temperature and deposition time for subsequent processing based on calculated changes in temperature ramp rates, coupled with the average temperature, deposition time for prior processing, and the resultant thicknesses.
    Type: Application
    Filed: December 22, 2006
    Publication date: June 26, 2008
    Applicant: SPANSION LLC
    Inventors: Christopher Hans Lansford, Qinghua He
  • Surface plasmon resonance-based endpoint detection for chemical mechanical planarization (CMP)
    Patent number: 6613594
    Abstract: A method is provided, the method comprising planarizing a dielectric layer disposed above a structure layer, exciting surface plasmons in a conductive film disposed in the dielectric layer and detecting photons reflected from the conductive film to determine a change in a surface plasmon resonant angle. The method also comprises determining a thickness of the dielectric layer from the change in the surface plasmon resonant angle.
    Type: Grant
    Filed: November 7, 2001
    Date of Patent: September 2, 2003
    Assignee: Advanced Micro Devices, INC
    Inventors: Christopher Hans Lansford, Jeremy Sam Lansford