Abstract: A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

Abstract: A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

Abstract: A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

Abstract: A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

Abstract: A method is provided. The method may include providing a substrate, the substrate comprising a substrate surface, the substrate surface having a three-dimensional shape. The method may further include directing a depositing species from a deposition source to the substrate surface, wherein a layer is deposited on a deposition region of the substrate surface. The method may include performing a substrate scan during the directing or after the directing to transport the substrate from a first position to a second position. The method may also include directing angled ions to the substrate surface, in a presence of the layer, wherein the layer is sputter-etched from a first portion of the deposition region, and wherein the layer remains in a second portion of the deposition region.

Abstract: A method is provided. The method may include providing a substrate, the substrate comprising a substrate surface, the substrate surface having a three-dimensional shape. The method may further include directing a depositing species from a deposition source to the substrate surface, wherein a layer is deposited on a deposition region of the substrate surface. The method may include performing a substrate scan during the directing or after the directing to transport the substrate from a first position to a second position. The method may also include directing angled ions to the substrate surface, in a presence of the layer, wherein the layer is sputter-etched from a first portion of the deposition region, and wherein the layer remains in a second portion of the deposition region.

Abstract: A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

Abstract: Various nanostructures, including silicon nanowires and encapsulated silicon nanoislands, and methods of making the nanostructures are provided. The methods can include providing a fin structure extending above a substrate, wherein the fin structure has at least one silicon layer and at least two silicon:germanium alloy (SiGe) layers that define sidewalls of the fin structure; and annealing the fin structure in oxygen to form a silicon nanowire assembly. The silicon nanowire assembly can include a silicon nanowire, a SiGe matrix surrounding the silicon nanowire; and a silicon oxide layer disposed on the SiGe matrix. The annealing can be, for example, at a temperature between 800° C. and 1000° C. for five minutes to sixty minutes. The silicon nanowire can have a long axis extending along the fin axis, with perpendicular first and second dimensions extending less than 50 nm along directions perpendicular to the fin axis.

Abstract: Various nanostructures, including silicon nanowires and encapsulated silicon nanoislands, and methods of making the nanostructures are provided. The methods can include providing a fin structure extending above a substrate, wherein the fin structure has at least one silicon layer and at least two silicon:germanium alloy (SiGe) layers that define sidewalls of the fin structure; and annealing the fin structure in oxygen to form a silicon nanowire assembly. The silicon nanowire assembly can include a silicon nanowire, a SiGe matrix surrounding the silicon nanowire; and a silicon oxide layer disposed on the SiGe matrix. The annealing can be, for example, at a temperature between 800° C. and 1000° C. for five minutes to sixty minutes. The silicon nanowire can have a long axis extending along the fin axis, with perpendicular first and second dimensions extending less than 50 nm along directions perpendicular to the fin axis.

Abstract: Various nanostructures, including silicon nanowires and encapsulated silicon nanoislands, and methods of making the nanostructures are provided. The methods can include providing a fin structure extending above a substrate, wherein the fin structure has at least one silicon layer and at least two silicon:germanium alloy (SiGe) layers that define sidewalls of the fin structure; and annealing the fin structure in oxygen to form a silicon nanowire assembly. The silicon nanowire assembly can include a silicon nanowire, a SiGe matrix surrounding the silicon nanowire; and a silicon oxide layer disposed on the SiGe matrix. The annealing can be, for example, at a temperature between 800° C. and 1000° C. for five minutes to sixty minutes. The silicon nanowire can have a long axis extending along the fin axis, with perpendicular first and second dimensions extending less than 50 nm along directions perpendicular to the fin axis.

Abstract: Various nanostructures, including silicon nanowires and encapsulated silicon nanoislands, and methods of making the nanostructures are provided. The methods can include providing a fin structure extending above a substrate, wherein the fin structure has at least one silicon layer and at least two silicon:germanium alloy (SiGe) layers that define sidewalls of the fin structure; and annealing the fin structure in oxygen to form a silicon nanowire assembly. The silicon nanowire assembly can include a silicon nanowire, a SiGe matrix surrounding the silicon nanowire; and a silicon oxide layer disposed on the SiGe matrix. The annealing can be, for example, at a temperature between 800° C. and 1000° C. for five minutes to sixty minutes. The silicon nanowire can have a long axis extending along the fin axis, with perpendicular first and second dimensions extending less than 50 nm along directions perpendicular to the fin axis.

Abstract: Embodiments of the present invention provide methods for forming fin structure with desired materials using a conversion process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of forming a fin structure on a substrate includes performing an directional plasma process on a fin structure formed from a substrate comprising a first type of atoms, the directional plasma process dopes a second type of atoms on sidewalls of the fin structure, performing a surface modification process to form a surface modified layer on the sidewalls of the fin structure reacting with the first type of atoms, replacing the first type of the atoms with the second type of the atoms in the fin structure during the surface modification process, and forming the fin structure including the second type of the atoms on the substrate.

Abstract: A method for fabricating a multilayer structure includes providing a mask on a device stack disposed on the substrate, the device stack comprising a first plurality of layers composed of a first layer type and a second layer type; directing first ions along a first direction forming a first non-zero angle of incidence with respect to a normal to a plane of the substrate, wherein a first sidewall is formed having a sidewall angle forming a first non-zero angle of inclination with respect to the normal, the first sidewall comprising a second plurality of layers from at least a portion of the first plurality of layers and composed of the first layer type and second layer type; and etching the second plurality of layers using a first selective etch wherein the first layer type is selectively etched with respect to the second layer type.

Abstract: Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.

Abstract: Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.

Abstract: A method for fabricating a multilayer structure includes providing a mask on a device stack disposed on the substrate, the device stack comprising a first plurality of layers composed of a first layer type and a second layer type; directing first ions along a first direction forming a first non-zero angle of incidence with respect to a normal to a plane of the substrate, wherein a first sidewall is formed having a sidewall angle forming a first non-zero angle of inclination with respect to the normal, the first sidewall comprising a second plurality of layers from at least a portion of the first plurality of layers and composed of the first layer type and second layer type; and etching the second plurality of layers using a first selective etch wherein the first layer type is selectively etched with respect to the second layer type.

Abstract: A method for fabricating a multilayer structure includes providing a mask on a device stack disposed on the substrate, the device stack comprising a first plurality of layers composed of a first layer type and a second layer type; directing first ions along a first direction forming a first non-zero angle of incidence with respect to a normal to a plane of the substrate, wherein a first sidewall is formed having a sidewall angle forming a first non-zero angle of inclination with respect to the normal, the first sidewall comprising a second plurality of layers from at least a portion of the first plurality of layers and composed of the first layer type and second layer type; and etching the second plurality of layers using a first selective etch wherein the first layer type is selectively etched with respect to the second layer type.

Abstract: Embodiments of the present invention provide methods for forming fin structure with desired materials using a conversion process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of forming a fin structure on a substrate includes performing an directional plasma process on a fin structure formed from a substrate comprising a first type of atoms, the directional plasma process dopes a second type of atoms on sidewalls of the fin structure, performing a surface modification process to form a surface modified layer on the sidewalls of the fin structure reacting with the first type of atoms, replacing the first type of the atoms with the second type of the atoms in the fin structure during the surface modification process, and forming the fin structure including the second type of the atoms on the substrate.

Abstract: A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.

Abstract: An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.