Abstract: A semiconductor diode structure comprising a Schottky junction, where a metal contact and a silicon carbide semiconducting layer of a first conducting type form said junction and where the edge of the junction exhibits a Junction Termination Extension (JTE) laterally surrounding the junction, said JTE having a charge profile with a stepwise or uniformly decreasing total charge or effective sheet charge density from an initial value to a zero or almost zero total charge at the outermost edge of the termination following a radial direction from the centre part of the JTE towards the outermost edge of the termination. The object of the junction termination extension is to control the electric field at the periphery of the diode.

Abstract: A semiconductor device of planar structure, comprises a pn junction, formed of a first type conducting layer and on top thereof a second type conducting layer, both layers of doped silicon carbide, the edge of the second of the layers being provided with an edge termination (JTE), enclosing stepwise or continuously decreasing effective sheet charge density towards the outer border of the termination, wherein the pn junction and its JTE are covered by a doped or undoped SiC third layer.