Patents by Inventor Christopher J. Eiting

Christopher J. Eiting has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of growing homoepitaxial silicon carbide
    Patent number: H2193
    Abstract: A method of growing a SiC film within an MBE system is disclosed. The method includes charging a first crucible with a quality of C60, and coating a second crucible with a layer of SiC. The second crucible is charged with a quantity of solid Si. The crucibles are installed into first and second effusion cells which are placed within the MBE growth chamber. A substrate is prepared by cleaning and polishing and loaded into the MBE growth chamber. The substrate and effusion cells are heated and a layer of SiC is grown by MBE onto the substrate.
    Type: Grant
    Filed: January 14, 2002
    Date of Patent: July 3, 2007
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: William V. Lampert, Christopher J. Eiting, Scott A. Smith, Trice W. Haas