Abstract: Disclosed are semiconductor devices (e.g., diodes, such as PN junction diodes and PIN junction diodes, and capacitors) that have semiconductor bodies with interleaved horizontal portions. In the case of a diode, the semiconductor bodies can have different type conductivities and, optionally, can be separated by an intrinsic semiconductor layer. In the case of a capacitor, the semiconductor bodies can have the same or different type conductivities and can be separated by a dielectric layer. In any case, due to the interleaved horizontal portions, the semiconductor devices each have a relatively large active device region within a relatively small area on an integrated circuit chip. Also disclosed herein are methods of forming such semiconductor devices.

Abstract: Disclosed are semiconductor devices (e.g., diodes, such as PN junction diodes and PIN junction diodes, and capacitors) that have semiconductor bodies with interleaved horizontal portions. In the case of a diode, the semiconductor bodies can have different type conductivities and, optionally, can be separated by an intrinsic semiconductor layer. In the case of a capacitor, the semiconductor bodies can have the same or different type conductivities and can be separated by a dielectric layer. In any case, due to the interleaved horizontal portions, the semiconductor devices each have a relatively large active device region within a relatively small area on an integrated circuit chip. Also disclosed herein are methods of forming such semiconductor devices.