Abstract: A substrate processing system configured to process substrates includes a substrate transport assembly that encloses a controlled environment defined within a continuous transport volume and at least two process modules coupled to the substrate transport assembly. The substrate transport assembly is configured to transport substrates to and from the at least two process modules through the continuous transport volume. At least two gas boxes are configured to deliver gas mixtures to the at least two process modules. An exhaust duct configured to selectively evacuate the at least two process modules through the at least two gas boxes. Surfaces of the at least two gas boxes include perforations configured to allow gases to flow from the at least two gas boxes into the exhaust duct.

Abstract: A gas delivery system for substrate processing tool includes a first gas box configured to supply a first gas mixture including one or more gases selected from a first set of N gases to a first substrate processing chamber, where N is an integer greater than one. A second gas box is configured to selectively supply a second gas mixture including one or more gases selected from a second set of M gases to a second substrate processing chamber, where M is an integer greater than one. A third gas box is configured to supply a third gas to the first substrate processing chamber at a first concentration and to supply the third gas to the second substrate processing chamber at a second concentration. The third gas is incompatible with one or more gases in the first set of N gases and with one or more gas in the second set of M gases.

Abstract: A substrate processing system includes a vacuum transfer module and a plurality of process modules defining respective processing chambers. The plurality of process modules includes a first row of the process modules arranged on a first side of the vacuum transfer module and a second row of the process modules arranged on a second side of the vacuum transfer module opposite the first side. Each of the plurality of process modules includes a gas box arranged above the process module and configured to selectively supply at least one gas and/or gas mixture into the processing chamber of the process module and a radio frequency (RF) generator configured to generate RF power to create plasma within the processing chamber. The RF generator is arranged above the process module and the gas box and the RF generator are arranged side-by-side above the process module.

Abstract: A substrate processing system configured to process substrates includes a substrate transport assembly that encloses a controlled environment defined within a continuous transport volume and at least two process modules coupled to the substrate transport assembly. The substrate transport assembly is configured to transport substrates to and from the at least two process modules through the continuous transport volume. At least two gas boxes are configured to deliver gas mixtures to the at least two process modules. An exhaust duct configured to selectively evacuate the at least two process modules through the at least two gas boxes. Surfaces of the at least two gas boxes include perforations configured to allow gases to flow from the at least two gas boxes into the exhaust duct.

Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

Abstract: Component-locating templates or masks for use with positioning fluid-flow components on monolithic ceramic substrates are provided, as well as techniques for the manufacture of such templates.

Abstract: Component-locating templates or masks for use with positioning fluid-flow components on monolithic ceramic substrates are provided, as well as techniques for the manufacture of such templates.

Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus. The substrate includes a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate includes a first gas channel extending into an interior major surface that at least partially overlaps a second gas channel extending into a different interior major surface. The substrate includes a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the forth gas supply component.

Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

Abstract: An edge wheel assembly for use in a semiconductor wafer fabrication brush box is provided. The edge wheel assembly is configured to support and to rotate a semiconductor wafer in a vertical orientation and includes an edge wheel assembly block having at least two pairs of edge wheel shaft bores. Edge wheels are attached to shafts extending through the edge wheel shaft bores, and a drive motor drives the shafts to rotate the edge wheels. The drive motor is coupled to the edge wheel assembly block with a plate which is designed to enable insertion of the edge wheel assembly into either one of a first side and a second side of the brush box. Component parts are designed to be configurable to a plurality of orientations and implementations.

Abstract: A modular brush drive assembly used in a brush box for processing a substrate is provided. The modular brush drive assembly includes a pair of brush drives. Each of the pair of brush drives has a mandrel capable of receiving a brush for processing a substrate, a mandrel support arm, and a brush drive housing configured to receive the mandrel and the mandrel support arm. The brush drive housing is configured to pivot. A brush drive position control assembly is further provided and includes a pair of interlocking brush angle gears which interconnect with brush drive shafts. A positioning control is coupled to one of the interlocking brush angle gears to cause pivoting of each brush drive housing. Component parts are designed to be configurable to a plurality of orientations and implementations.