Abstract: Methods and systems for building a photomask from obtained pattern information relating to a photomask that exhibits defects on wafer. Spatial domain analysis is conducted on the pattern information so that corrective photomask structures can be generated and applied to a photomask layout. A photomask is built using the corrective photomask structures. The photomask is verified for effectiveness.

Abstract: A microfluidic panel including at least one substrate, one or more channels formed in the substrate, and fluid disposed within the one or more channels. The fluid is selected to store thermal energy and the microfluidic panel is adapted to convert the thermal energy into useable energy or condition the energy to adjust optical wavelength passband of the panel.

Abstract: A microfluidic panel including at least one substrate, one or more channels formed in the substrate, and fluid disposed within the one or more channels. The fluid is selected to store thermal energy and the microfluidic panel is adapted to convert the thermal energy into useable energy or condition the energy to adjust optical wavelength passband of the panel.

Abstract: A microfluidic panel including at least one substrate, one or more channels formed in the substrate, and fluid disposed within the one or more channels. The fluid is selected to store thermal energy and the microfluidic panel is adapted to convert the thermal energy into useable energy or condition the energy to adjust optical wavelength passband of the panel.

Abstract: A photomask used for manufacturing a semiconductor device includes a substrate; and one or more layers disposed over the substrate, the one or more layers defining a full field area and a reduced field area with a primary pattern being formed in the reduced field area, wherein the full field area is defined by a width of at least 90 mm and a length of at least 100 mm, and the reduced field area is defined by a width within the range of approximately 20-80 mm and a length within the range of approximately 20-80 mm, a center point of the primary patterned area being spaced a predetermined distance from a center point of the photomask so that the primary patterned area avoids photomask defects.

Abstract: A photomask used for manufacturing a semiconductor device includes a substrate; and one or more layers disposed over the substrate, the one or more layers defining a full field area and a reduced field area with a primary pattern being formed in the reduced field area, wherein the full field area is defined by a width of at least 90 mm and a length of at least 100 mm, and the reduced field area is defined by a width within the range of approximately 20-80 mm and a length within the range of approximately 20-80 mm.

Abstract: A microfluidic panel including at least one substrate, one or more channels formed in the substrate, and fluid disposed within the one or more channels. The fluid is selected to store thermal energy and the microfluidic panel is adapted to convert the thermal energy into useable energy or condition the energy to adjust optical wavelength passband of the panel.

Abstract: An integrated circuit including a substrate; a circuit pattern formed over the substrate; and one or more fences formed around edges of the circuit pattern, each of the one or more fences having a determined electrical resistance which is used to detect the addition of malicious circuitry. Each fence has a determined electrical resistance which is used to monitor the validity of the fence.

Abstract: A photomask for integrated circuit production for development of integrated circuit components, where the integrated circuit production uses a radiation source that generates a source image, includes a substrate with one or more layers disposed thereon; a source separator element that separates the source image into one or more duplicate source images; one or more polarizing elements each corresponding to one of the one or more duplicate source images; and one or more sensors each corresponding to one of the one or more polarizing elements, the one or more sensors sensing one or more radiation characteristics of the radiation source.

Abstract: A photomask used for manufacturing a semiconductor device includes a substrate; and one or more layers disposed over the substrate, the one or more layers defining a full field area and a reduced field area with a primary pattern being formed in the reduced field area, wherein the full field area is defined by a width of at least 90 mm and a height of at least 100 mm, and the reduced field area is defined by a width within the range of approximately 20-80 mm and a height within the range of approximately 20-80 mm, a center point of the primary patterned area being spaced a predetermined distance from a center point of the photomask so that the primary patterned area avoids photomask defects.

Abstract: A secure photomask including a substrate having one or more pattern layers formed thereon and a blocking aperture disposed below the one or more pattern layers that prevents at least one of unauthorized use and copying of the photomask.

Abstract: A photomask used for manufacturing a semiconductor device includes a substrate; and one or more layers disposed over the substrate, the one or more layers defining a full field area and a reduced field area with a primary pattern being formed in the reduced field area, wherein the full field area is defined by a width of at least 90 mm and a height of at least 100 mm, and the reduced field area is defined by a width within the range of approximately 20-80 mm and a height within the range of approximately 20-80 mm.

Abstract: The present invention generally relates to improved binary half tone (“BHT”) photomasks and microscopic three-dimensional structures (e.g., MEMS, micro-optics, photonics, micro-structures and other three-dimensional, microscopic devices) made from such BHT photomasks. More particularly, the present invention provides a method for designing a BHT photomask layout, transferring the layout to a BHT photomask and fabricating three-dimensional microscopic structures using the BHT photomask designed by the method of the present invention. In this regard, the method of designing a BHT photomask layout comprises the steps of generating at least two pixels, dividing each of the pixels into sub-pixels having a variable length in a first axis and fixed length in a second axis, and arraying the pixels to form a pattern for transmitting light through the pixels so as to form a continuous tone, aerial light image.

Abstract: An integrated circuit including a substrate; a circuit pattern formed over the substrate; and one or more fences formed around edges of the circuit pattern, each of the one or more fences having a determined electrical resistance which is used to detect the addition of malicious circuitry. Each fence has a determined electrical resistance which is used to monitor the validity of the fence.

Abstract: A photomask for integrated circuit production for development of integrated circuit components, where the integrated circuit production uses a radiation source that generates a source image, includes a substrate with one or more layers disposed thereon; a source separator element that separates the source image into one or more duplicate source images; one or more polarizing elements each corresponding to one of the one or more duplicate source images; and one or more sensors each corresponding to one of the one or more polarizing elements, the one or more sensors sensing one or more radiation characteristics of the radiation source.

Abstract: A secure photomask including a substrate having one or more pattern layers formed thereon and a blocking aperture disposed below the one or more pattern layers that prevents at least one of unauthorized use and copying of the photomask.

Abstract: The present invention relates to a comprehensive front-end method and system for automatically generating and processing photomask orders. This method and system includes two separate, but related software components. The first software component of the present invention is used to generate a photomask order in a specified format. The second software component of the present invention processes at least a portion of the photomask order (which was generated using the first software component) into a substantially ready-to-write jobdeck file and/or a substantially ready-to-write inspection file, which in turn is transferred to a remote photomask manufacturer's system to manufacture a photomask. These software components can be installed as separate programs on a computer system or operate as a single software package performing multiple functions.

Abstract: The present invention generally relates to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes a light absorbing film in a conventional aaPSMs to balance the intensity of light through each opening of the photomask. The aaPSM of the present invention is used to make semiconductor devices or integrated circuits.

Abstract: The present invention generally relates to improved binary half tone (“BHT”) photomasks and microscopic three-dimensional structures (e.g., MEMS, micro-optics, photonics, micro-structures and other three-dimensional, microscopic devices) made from such BHT photomasks. More particularly, the present invention provides a method for designing a BHT photomask layout, transferring the layout to a BHT photomask and fabricating three-dimensional microscopic structures using the BHT photomask designed by the method of the present invention. In this regard, the method of designing a BHT photomask layout comprises the steps of generating at least two pixels, dividing each of the pixels into sub-pixels having a variable length in a first axis and fixed length in a second axis, and arraying the pixels to form a pattern for transmitting light through the pixels so as to form a continuous tone, aerial light image.

Abstract: A method for inspecting masks used to project patterns in photolithographic imaging comprises initially providing a photolithographic mask having a pattern field thereon, where in normal production use the pattern is transferred by a reduction projector as a demagnified pattern on a production substrate, and providing a movable field-defining aperture adjacent the mask, the aperture having a field area less than, and capable of defining a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. The method then includes aligning the field-defining aperture with a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. Using an energy source, the method includes projecting the pattern subfield onto a test substrate and exposing onto the test substrate the pattern subfield at a size between that normally exposed on a production substrate and the actual size of the pattern subfield on the photolithographic mask.