Abstract: A monoshock mount assembly allows conversion of the rear suspension system of a motorcycle from any existing configuration to a monoshock configuration that uses a single shock absorber. The monoshock mount assembly replaces factory-standard frame and suspension components. A body mount assembly attaches to existing attachment points of the motorcycle frame and provides structural support for bodywork, electrical and suspension components, and Other components. A swing arm pivotably attaches to the motorcycle frame and provides a lower shock mount, which may be offset from the centerline of the motorcycle. An upper brace attaches to the same attachment points as the body mount assembly and provides an upper shock mount that cooperates with the lower shock mount to mount the single shock absorber in a position where the shock absorber can operate normally without contacting motorcycle components supported by the body mount assembly.

Abstract: Apparatus for removing suspended impurities from a liquid (e.g., wastewater), methods of use, and systems including such apparatus. In an embodiment, an apparatus may include a vessel defining a chamber for receiving gas induced liquid influent through an inlet, the influent including suspended impurities. A riser tube may be provided within the vessel, in fluid communication with the inlet so that liquid influent introduced into the vessel through the inlet is introduced into the riser tube. One or more coalescing members may be disposed within the riser tube. The coalescing members may be sufficiently small to be easily removable by hand, without requiring a crane. The coalescing members may be freely disposed within the riser tube, rotatable within the flow of the liquid influent, aiding the coalescing members in exhibiting some degree of “self-cleaning”, so as to be less prone to fouling and clogging.

Abstract: A monoshock mount assembly allows conversion of the rear suspension system of a motorcycle from any existing configuration to a monoshock configuration that uses a single shock absorber. The monoshock mount assembly replaces factory-standard frame and suspension components. A body mount assembly attaches to existing attachment points of the motorcycle frame and provides structural support for bodywork, electrical and suspension components, and Other components. A swing arm pivotably attaches to the motorcycle frame and provides a lower shock mount, which may be offset from the centerline of the motor-cycle. An upper brace attaches to the same attachment points as the body mount assembly and provides an upper shock mount that cooperates with the lower shock mount to mount the single shock absorber in a position where the shock absorber can operate normally without contacting motorcycle components supported by the body mount assembly.

Abstract: Apparatus for removing suspended impurities from a liquid (e.g., wastewater), methods of use, and systems including such apparatus. In an embodiment, an apparatus may include a vessel defining a chamber for receiving gas induced liquid influent through an inlet, the influent including suspended impurities. A riser tube may be provided within the vessel, in fluid communication with the inlet so that liquid influent introduced into the vessel through the inlet is introduced into the riser tube. One or more coalescing members may be disposed within the riser tube. The coalescing members may be sufficiently small to be easily removable by hand, without requiring a crane. The coalescing members may be freely disposed within the riser tube, rotatable within the flow of the liquid influent, aiding the coalescing members in exhibiting some degree of “self-cleaning”, so as to be less prone to fouling and clogging.

Abstract: A replacement neck assembly for a motorcycle modifies the motorcycle frame to accept a larger front wheel diameter than the factory original, the replacement neck assembly providing the replacement neck, an optional fairing mount, the replacement neck accepting a factory or modified triple tree, whereby the motorcycle frame can accept the large front wheel without affecting the operating height of the motorcycle.

Abstract: The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.

Abstract: The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.

Abstract: The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.

Abstract: An optoelectronic circuit fabrication method and integrated circuit apparatus fabricated therewith. Integrated circuits are fabricated with an integral optical coupling transition to efficiently couple optical energy from an optical fiber to an integrated optical waveguide on the integrated circuit. Layers of specific materials are deposited onto a semiconductor circuit to support etching of a trench to receive an optical coupler that performs proper impedance matching between an optical fiber and an on-circuit optical waveguide that extends part way into the transition channel. A silicon based dielectric that includes at least a portion with a refractive index substantially equal to a section of the optical fiber is deposited into the etched trench to create the optical coupler. Silicon based dielectrics with graded indices are also able to be used. Chemical mechanical polishing is used finalize preparation of the optical transition and integrated circuit.

Abstract: An optoelectronic circuit fabrication method and integrated circuit apparatus fabricated therewith. Integrated circuits are fabricated with an integral optical coupling transition to efficiently couple optical energy from an optical fiber to an integrated optical waveguide on the integrated circuit. Layers of specific materials are deposited onto a semiconductor circuit to support etching of a trench to receive an optical coupler that performs proper impedance matching between an optical fiber and an on-circuit optical waveguide that extends part way into the transition channel. A silicon based dielectric that includes at least a portion with a refractive index substantially equal to a section of the optical fiber is deposited into the etched trench to create the optical coupler. Silicon based dielectrics with graded indices are also able to be used. Chemical mechanical polishing is used finalize preparation of the optical transition and integrated circuit.

Abstract: The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.

Abstract: A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.

Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.

Abstract: A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials.” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed.

Abstract: A multilevel air-gap-containing interconnect structure and a method of fabricating the same are provided. The multilevel air-gap-containing interconnect structure includes a collection of interspersed line levels and via levels, with via levels comprising conductive vias embedded in one or more dielectric layers in which the dielectric layers are solid underneath and above line features in adjacent levels, and perforated between line features. The line levels contain conductive lines and an air-gap-containing dielectric. A solid dielectric bridge layer, containing conductive contacts and formed by filling in a perforated dielectric layer, is disposed over the collection of interspersed line and via levels.

Abstract: A microelectromechanical switch including: at least one pair of actuator electrodes; at least one input electrode and at least one output electrode for input and output, respectively, of a radio frequency signal; and a beam movable by an attraction between the at least one pair of actuator electrodes, the movable beam having at least a portion electrically connected to the at least one input electrode and to the at least one output electrode when moved by the attraction between the at least one pair of actuator electrodes to make an electrical connection between the at least one input and output electrodes; wherein the at least one pair of actuator electrodes are electrically isolated from each of the at least one input and output electrodes. The microelectromechanical switch can be configured in single or multiple-poles and/or single or multiple throws.

Abstract: A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.

Abstract: A method of patterning and releasing chemically sensitive low k films without the complication of a permanent hardmask stack, yielding an unaltered free-standing structure is provided. The method includes providing a structure including a Si-containing substrate having in-laid etch stop layers located therein; forming a chemically sensitive low k film and a protective hardmask having a pattern atop the structure; transferring the pattern to the chemically sensitive low k film to provide an opening that exposes a portion of the Si-containing substrate; and etching the exposed portion of the Si-containing substrate through the opening to provide a cavity in the Si-containing substrate in which a free-standing low k film structure is formed, while removing the hardmask. In accordance with the present invention, the etching comprises a XeF2 etch gas.