Abstract: The specification describes a lithographic technique in which alignment marks are defined in a first semiconductor layer and the alignment marks are then covered with a protective SiO2 layer. After subsequent semiconductor layer growth steps, which selectively deposit on the former semiconductor layer but not on the protective layer, the alignment marks remain undistorted and visible to the exposure tool for subsequent processing.

Abstract: A process for device fabrication is disclosed in which two substrates having different crystal lattices are bound together. In the process the substrate surfaces are placed in physical contact with each other. A flexible membrane is placed in physical contact with a surface of one of the substrates. Pneumatic force is applied to the flexible membrane. The duration of the contact and the pressure of the contact are selected to facilitate a bond between the two substrate surfaces that results from attractive Van der Waals' forces between the two surfaces. The bulk of one of the substrates is then typically removed. Thereafter, the bonded surfaces are heated to a high temperature to effect a permanent bond.

Abstract: A process for device fabrication is disclosed in which two substrates having different crystal lattices are bound together. In the process the substrate surfaces are thoroughly cleaned and placed in physical contact with each other. The duration of the contact and the pressure of the contact are selected to facilitate a bond between the two substrate surfaces that results from attractive Van der Waals' forces between the two surfaces. The bonded substrates are heated to a moderate temperature to effect escape of gases which may be entrapped by the substrates. The bulk of one of the substrates is then typically removed. The substrates can be heated again to a moderate temperature to effect removal of any gases remaining entrapped on the substrates. Thereafter, the bonded surfaces are heated to a high temperature to effect a permanent bond.

Abstract: A process for device fabrication is disclosed in which two substrates having different crystal lattices are bound together. In the process a layer of material that has a crystal lattice similar to the crystal lattices of the first substrate is formed on the surface of the second substrate. The thickness of the layer is about 1 nm to about 2 nm. The layer of material is then bound to the surface of the first substrate.

Abstract: The present invention is a method for making multi-quantum well structures having superior interfacial crystalline quality. In particular, it is an LP-MOCVD crystal growth method using continuous growth stages to produce well-defined heterojunctions of uniform thickness for multi-quantum well (MQW) lasers, including MQW lasers structures having output wavelengths less than approximately 1.55 .mu.m. The continuous growth stages are characterized by essentially instantaneous gas switching sequences from a first gaseous mixture used to grow separate confinement layers (SCL) and barrier layers to a second gaseous mixture used to grow quantum well layers. By continuous growth stages it is meant that there is no intentional pause between well and barrier layer growth stages, that is, the gaseous mixture used for a particular growth stage is introduced into the LP-MOCVD reactor just as the last of the previous gaseous mixture is venting out of the reactor.