Abstract: Embodiments of the disclosure provide apparatuses, systems, and methods related to controlling film thickness in photonic-integrated apparatus. In some embodiments, a bottom cladding layer is deposited on a substrate, a thickness map of the bottom cladding layer is generated, thickness trimming is performed on the bottom cladding layer based on the thickness map for the bottom cladding layer; a waveguide core layer is deposited on the bottom cladding layer, a thickness map of the waveguide core layer is generated, thickness trimming is performed on the waveguide core layer based on the thickness map for the bottom waveguide core layer; a top cladding layer is deposited on the waveguide core layer, a thickness map of the top cladding layer is generated; and thickness trimming is performed on the top cladding layer based on the thickness map for the top cladding layer.

Abstract: An optics-integrated confinement apparatus system comprises a confinement apparatus chip having a confinement apparatus formed thereon and having at least one apparatus optical element disposed and/or formed thereon.

Abstract: A low loss silicon nitride film is formed by depositing a silicon nitride film on a substrate and annealing the silicon nitride film for at least ten hours at a temperature of at least 400° C. to cause the silicon nitride film to become a low loss silicon nitride film. The low loss silicon nitride film has an optical loss of less than 1 dB per cm at a wavelength of 488 nm.