Abstract: An inspection system uses inspection data biased to compensate for mismatches that occur as a result of using an optical lithography system to print an alternating phase shift mask that operates at a wavelength of light that is different from the wavelength of light that an inspection system uses to inspect the mask for defects.

Abstract: Methods, systems, program storage devices and computer program products for mask inspection that automate the detection and placement of do not inspect regions (“DNIR”) for intentionally induced defects on masks. A location of an intentional defect is identified on a mask, and then logic relating to this location is translated into a shape that represents a DNIR for the intentional defect. A second shape representing another DNIR of the mask is provided. It is then determined if the first and second shapes for DNIRs violate a processing rule of the inspection tool, and if so, the violated rule is corrected for by generating a single contiguous DNIR by overlapping the first and second shapes. The inspection tool then utilizes the first and second shapes representing DNIRs, along with any single contiguous DNIRs, to inspect the mask for unintentional defects while avoiding intentional defects.

Abstract: A method for correction of defects in lithography masks includes determining the existence of mask defects on an original mask, and identifying a stitchable zone around each of the mask defects found on the original mask. Each of the identified stitchable zones on the original mask is blocked out such that circuitry within the stitchable zones is not printed out during exposure of the original mask. A repair mask is formed, the repair mask including corrected circuit patterns from each of the identified stitchable zones.

Abstract: Methods, systems, program storage devices and computer program products for mask inspection that automate the detection and placement of do not inspect regions (“DNIR”) for intentionally induced defects on masks. A location of an intentional defect is identified on a mask, and then logic relating to this location is translated into a shape that represents a DNIR for the intentional defect. A second shape representing another DNIR of the mask is provided. It is then determined if the first and second shapes for DNIRs violate a processing rule of the inspection tool, and if so, the violated rule is corrected for by generating a single contiguous DNIR by overlapping the first and second shapes. The inspection tool then utilizes the first and second shapes representing DNIRs, along with any single contiguous DNIRs, to inspect the mask for unintentional defects while avoiding intentional defects.

Abstract: Methods, systems, program storage devices and computer program products for mask inspection that automate the detection and placement of do not inspect regions (“DNIR”) for intentionally induced defects on masks. A location of an intentional defect is identified on a mask, and then logic relating to this location is translated into a shape that represents a DNIR for the intentional defect. A second shape representing another DNIR of the mask is provided. It is then determined if the first and second shapes for DNIRs violate a processing rule of the inspection tool, and if so, the violated rule is corrected for by generating a single contiguous DNIR by overlapping the first and second shapes. The inspection tool then utilizes the first and second shapes representing DNIRs, along with any single contiguous DNIRs, to inspect the mask for unintentional defects while avoiding intentional defects.

Abstract: An inspection system uses inspection data biased to compensate for mismatches that occur as a result of using an optical lithography system to print an alternating phase shift mask that operates at a wavelength of light that is different from the wavelength of light that an inspection system uses to inspect the mask for defects.

Abstract: A process for manufacturing and a photomask including a chrome layer over a transparent substrate, followed by a thin hardmask/barrier layer directly over the chrome layer having a thin resist layer thereover. The thin resist layer is patterned and developed wherein the barrier layer acts to retard the formation of a resist “foot” at the bottom of the resist profile. Exposed portions of the hardmask/barrier layer and the underlying chrome layer are etched, and then any remaining hardmask/barrier layer and resist layer is subsequently removed by an etchant. The hardmask/barrier layer directly over the chrome layer enables an improved pattern transfer mask during chrome etching processes, allows for further reduction in the thickness of the resist layer, improves the image quality, the achievable minimum resolution features, and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing.

Abstract: A process for manufacturing and a photomask including a chrome layer over a transparent substrate, followed by a thin hardmask/barrier layer directly over the chrome layer having a thin resist layer thereover. The thin resist layer is patterned and developed wherein the barrier layer acts to retard the formation of a resist “foot” at the bottom of the resist profile. Exposed portions of the hardmask/barrier layer and the underlying chrome layer are etched, and then any remaining hardmask/barrier layer and resist layer is subsequently removed by an etchant. The hardmask/barrier layer directly over the chrome layer enables an improved pattern transfer mask during chrome etching processes, allows for further reduction in the thickness of the resist layer, improves the image quality, the achievable minimum resolution features, and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing.

Abstract: A process for manufacturing and a photomask including a chrome layer over a transparent substrate, followed by a thin hardmask/barrier layer directly over the chrome layer having a thin resist layer thereover. The thin resist layer is patterned and developed wherein the barrier layer acts to retard the formation of a resist “foot” at the bottom of the resist profile. Exposed portions of the hardmask/barrier layer and the underlying chrome layer are etched, and then any remaining hardmask/barrier layer and resist layer is subsequently removed by an etchant. The hardmask/barrier layer directly over the chrome layer enables an improved pattern transfer mask during chrome etching processes, allows for further reduction in the thickness of the resist layer, improves the image quality, the achievable minimum resolution features, and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing.

Abstract: A process for manufacturing and a photomask including a chrome layer over a transparent substrate, followed by a thin hardmask/barrier layer directly over the chrome layer having a thin resist layer thereover. The thin resist layer is patterned and developed wherein the barrier layer acts to retard the formation of a resist “foot” at the bottom of the resist profile. Exposed portions of the hardmask/barrier layer and the underlying chrome layer are etched, and then any remaining hardmask/barrier layer and resist layer is subsequently removed by an etchant. The hardmask/barrier layer directly over the chrome layer enables an improved pattern transfer mask during chrome etching processes, allows for further reduction in the thickness of the resist layer, improves the image quality, the achievable minimum resolution features, and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing.