Abstract: A device includes a substrate (308) and a metallic layer (336) formed over the substrate (308) with a deposition process for which the metallic layer (336) is characterizable as having a pre-determinable as-deposited defect density. As a result of a fabrication process, the defect density of the metallic layer (336) is reduced relative to the pre-determinable as-deposited defect density of the same layer (336) or another layer having like composition and which is formed under like deposition conditions. In a related method, a substrate (308) is provided and a removable layer (330) is formed over the substrate (308). A metallic layer (336) is formed over the removable layer (330) and is patterned and etched to define a structure over the removable layer (330). The removable layer (330) is removed, and the metallic layer (336) is heated for a time beyond that necessary for bonding of a hermetic sealing cap (340) thereover.

Abstract: A device includes a substrate (308) and a metallic layer (336) formed over the substrate (308) with a deposition process for which the metallic layer (336) is characterizable as having a pre-determinable as-deposited defect density. As a result of a fabrication process, the defect density of the metallic layer (336) is reduced relative to the pre-determinable as-deposited defect density of the same layer (336) or another layer having like composition and which is formed under like deposition conditions. In a related method, a substrate (308) is provided and a removable layer (330) is formed over the substrate (308). A metallic layer (336) is formed over the removable layer (330) and is patterned and etched to define a structure over the removable layer (330). The removable layer (330) is removed, and the metallic layer (336) is heated for a time beyond that necessary for bonding of a hermetic sealing cap (340) thereover.

Abstract: A system is presented. The system includes detection circuitry configured to detect occurrence of a zero crossing of an alternating source voltage or an alternating load current. The system also includes switching circuitry coupled to the detection circuitry and comprising a micro-electromechanical system switch. Additionally, the system includes control circuitry coupled to the detection circuitry and the switching circuitry and configured to perform arc-less switching of the micro-electromechanical system switch responsive to a detected zero crossing of an alternating source voltage or alternating load current.

Abstract: A gating voltage control system and method are provided for electrostatically actuating a micro-electromechanical systems (MEMS) device, e.g., a MEMS switch. The device may comprise an electrostatically responsive actuator movable through a gap for actuating the device to a respective actuating condition corresponding to one of a first actuating condition (e.g., a closed switching condition) and a second actuating condition (e.g., an open switching condition). The gating voltage control system may comprise a drive circuit electrically coupled to a gate terminal of the device to apply a gating voltage. The gating voltage control system may further comprise a controller electrically coupled to the drive circuit to control the gating voltage applied to the gating terminal in accordance with a gating voltage control sequence.

Abstract: A gating voltage control system and method are provided for electrostatically actuating a micro-electromechanical systems (MEMS) device, e.g., a MEMS switch. The device may comprise an electrostatically responsive actuator movable through a gap for actuating the device to a respective actuating condition corresponding to one of a first actuating condition (e.g., a closed switching condition) and a second actuating condition (e.g., an open switching condition). The gating voltage control system may comprise a drive circuit electrically coupled to a gate terminal of the device to apply a gating voltage. The gating voltage control system may further comprise a controller electrically coupled to the drive circuit to control the gating voltage applied to the gating terminal in accordance with a gating voltage control sequence.

Abstract: Photodetector arrangements, designs and fabrication techniques are described related to semiconductor nanostructures. Arrangements and techniques are described which utilize a nano-patterned template for growing semiconductor nanostructures and/or heterostructures. Resulting photodetectors are also described.

Abstract: An electronics package is provided. The electronics package may include an underfill layer having a surface that defines an opening. The electronics package may include a polymer bump structure disposed within the opening. A laminate for use as an underfill layer is provided. Associated methods are provided.

Abstract: A system is presented. The system includes detection circuitry configured to detect occurrence of a zero crossing of an alternating source voltage or an alternating load current. The system also includes switching circuitry coupled to the detection circuitry and comprising a micro-electromechanical system switch. Additionally, the system includes control circuitry coupled to the detection circuitry and the switching circuitry and configured to perform arc-less switching of the micro-electromechanical system switch responsive to a detected zero crossing of an alternating source voltage or alternating load current.

Abstract: A photonic crystal based collection probe is provided. The probe includes a photonic crystal configured to guide and condition a beam of Raman scattered photons. Further, the device includes a spectrograph in optical communication with the photonic crystal and configured to receive Raman scattering from the photonic crystal. The device may be employed in a Raman spectrometer system.

Abstract: A processing method for use in the fabrication of fabrication of nanoscale electronic, optical, magnetic, biological, and fluidic devices and structures, for filling nanoscale holes and trenches, for planarizing a wafer surface, or for achieving both filling and planarizing of a wafer surface simultaneously. The method has the initial step of depositing a layer of a meltable material on a wafer surface. The material is then pressed using a transparent mold while shining a light pulse through the transparent mold to melt the deposited layer of meltable material. A flow of the molten layer material fills the holes and trenches, and conforms to surface features on the transparent mold. The transparent mold is subsequently removed.

Abstract: An article having low wettability is presented. The article comprises a body portion and a surface portion disposed on the body portion. The surface portion comprises a plurality of features disposed on the body portion, and the features have a size, shape, and orientation selected such that the surface portion has a wettability sufficient to generate, with a reference liquid, a contact angle of at least about 100 degrees. The features comprise a height dimension (h) and a width dimension (a), and are disposed in a spaced-apart relationship characterized by a spacing dimension (b). The ratio of b/a and the ratio of h/a are such that the drop exhibits metastable non-Wenzel behavior.

Abstract: An apparatus for the transfer of heat is presented. The apparatus comprises a textured heat transfer surface disposed to promote condensation of a vapor medium to a liquid condensate, the surface comprising a plurality of surface texture features disposed on the heat transfer surface. The plurality of features has a median size, a median spacing, and a median height displacement such that the force exerted by the surface to pin a drop of condensate to the surface is equal to or less than an external force acting to remove the drop from the surface. Also included are heat pumps, systems for power generation, and distillation systems comprising the apparatus.

Abstract: A device for controlling the flow of electric current is provided. The device comprises a first conductor; a second conductor switchably coupled to the first conductor to alternate between an electrically connected state with the first conductor and an electrically disconnected state with the first conductor. At least one conductor further comprises an electrical contact, the electrical contact comprising a solid matrix comprising a plurality of pores; and a filler material disposed within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575K. A method to make an electrical contact is provided. The method includes the steps of: providing a substrate; providing a plurality of pores on the substrate; and disposing a filler material within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575K.