Abstract: An imaging transmitter (Tx) for free-space optical communications (FOC) includes a light source for providing modulated light, a pixel controller configured for dynamic selection of at least a portion of the modulated light to provide at least one pre-collimated FOC beam. An imaging lens assembly is for collimating the pre-collimated FOC beam to provide a transmitted FOC beam. The pixel controller controls a location of the pre-collimated FOC beam with respect to a focal surface of the imaging lens assembly so that the transmitted FOC beam is projected into a desired direction in object space that is determined by the location, or in the case that the light source is an emitting array, equivalently the transmitted FOC beam is projected into a unique angular volume described by the center line-of-sight (LOS) and instantaneous FOV (iFOV) of the emitting pixel(s) in the array.

Abstract: There is disclosed ultrahigh-efficiency single- and multi-junction thin-film solar cells. This disclosure is also directed to a substrate-damage-free epitaxial lift-off (“ELO”) process that employs adhesive-free, reliable and lightweight cold-weld bonding to a substrate, such as bonding to plastic or metal foils shaped into compound parabolic metal foil concentrators. By combining low-cost solar cell production and ultrahigh-efficiency of solar intensity-concentrated thin-film solar cells on foil substrates shaped into an integrated collector, as described herein, both lower cost of the module as well as significant cost reductions in the infrastructure is achieved.

Abstract: A fabrication method for stretchable/conformable electronic and optoelectronic circuits and the resulting circuits. The method may utilize a variety of electronic materials including, but not limited to Silicon, GaAs, InSb, Pb Se, CdTe, organic semiconductors, metal oxide semiconductors and related alloys or hybrid combinations of the aforementioned materials. While a wide range of fabricated electronic/optoelectronic devices, circuits, and systems could be manufactured using the embodied technology, a hemispherical image sensor is an exemplary advantageous optoelectronic device that is enabled by this technology. Other applications include but are not limited to wearable electronics, flexible devices for the internet-of-things, and advanced imaging systems.

Abstract: An imaging transmitter (Tx) for free-space optical communications (FOC) includes a light source for providing modulated light, a pixel controller configured for dynamic selection of at least a portion of the modulated light to provide at least one pre-collimated FOC beam. An imaging lens assembly is for collimating the pre-collimated FOC beam to provide a transmitted FOC beam. The pixel controller controls a location of the pre-collimated FOC beam with respect to a focal surface of the imaging lens assembly so that the transmitted FOC beam is projected into a desired direction in object space that is determined by the location, or in the case that the light source is an emitting array, equivalently the transmitted FOC beam is projected into a unique angular volume described by the center line-of-sight (LOS) and instantaneous FOV (iFOV) of the emitting pixel(s) in the array.

Abstract: A fabrication method for stretchable/conformable electronic and optoelectronic circuits and the resulting circuits. The method may utilize a variety of electronic materials including, but not limited to Silicon, GaAs, InSb, PbSe, CdTe, organic semiconductors, metal oxide semiconductors and related alloys or hybrid combinations of the aforementioned materials. While a wide range of fabricated electronic/optoelectronic devices, circuits, and systems could be manufactured using the embodied technology, a hemispherical image sensor is an exemplary advantageous optoelectronic device that is enabled by this technology. Other applications include but are not limited to wearable electronics, flexible devices for the internet-of-things, and advanced imaging systems.

Abstract: An imaging transmitter (Tx) for free-space optical communications (FOC) includes a light source for providing modulated light, a pixel controller configured for dynamic selection of at least a portion of the modulated light to provide at least one pre-collimated FOC beam. An imaging lens assembly is for collimating the pre-collimated FOC beam to provide a transmitted FOC beam. The pixel controller controls a location of the pre-collimated FOC beam with respect to a focal surface of the imaging lens assembly so that the transmitted FOC beam is projected into a desired direction in object space that is determined by the location, or in the case that the light source is an emitting array, equivalently the transmitted FOC beam is projected into a unique angular volume described by the center line-of-sight (LOS) and instantaneous FOV (iFOV) of the emitting pixel(s) in the array.

Abstract: A fabrication method for stretchable/conformable electronic and optoelectronic circuits and the resulting circuits. The method may utilize a variety of electronic materials including, but not limited to Silicon, GaAs, InSb, Pb Se, CdTe, organic semiconductors, metal oxide semiconductors and related alloys or hybrid combinations of the aforementioned materials. While a wide range of fabricated electronic/optoelectronic devices, circuits, and systems could be manufactured using the embodied technology, a hemispherical image sensor is an exemplary advantageous optoelectronic device that is enabled by this technology. Other applications include but are not limited to wearable electronics, flexible devices for the internet-of-things, and advanced imaging systems.

Abstract: There is disclosed ultrahigh-efficiency single- and multi-junction thin-film solar cells. This disclosure is also directed to a substrate-damage-free epitaxial lift-off (“ELO”) process that employs adhesive-free, reliable and lightweight cold-weld bonding to a substrate, such as bonding to plastic or metal foils shaped into compound parabolic metal foil concentrators. By combining low-cost solar cell production and ultrahigh-efficiency of solar intensity-concentrated thin-film solar cells on foil substrates shaped into an integrated collector, as described herein, both lower cost of the module as well as significant cost reductions in the infrastructure is achieved.

Abstract: A fabrication method for stretchable/conformable electronic and optoelectronic circuits and the resulting circuits. The method may utilize a variety of electronic materials including, but not limited to Silicon, GaAs, InSb, Pb Se, CdTe, organic semiconductors, metal oxide semiconductors and related alloys or hybrid combinations of the aforementioned materials. While a wide range of fabricated electronic/optoelectronic devices, circuits, and systems could be manufactured using the embodied technology, a hemispherical image sensor is an exemplary advantageous optoelectronic device that is enabled by this technology. Other applications include but are not limited to wearable electronics, flexible devices for the internet-of-things, and advanced imaging systems.

Abstract: Systems and methods including bonding two or more separately formed circuit layers are provided using, for example, cold welding techniques. Processing techniques may be provided for combining inorganic and/or organic semiconductor devices in apparatus including, for example, microchips, optoelectronic devices, such as solar cells, photodetectors and organic light emitting diodes (OLEDs), and other apparatus with multi-layer circuitry. Methods of bonding preformed circuit layers may include the use of stamping and pressure bonding contacts of two or more circuit layers together. Such methods may find applicability, for example, in bonding circuitry to shaped substrates, including various rounded and irregular shapes, and may be used to combine devices with different structural properties, e.g. from different materials systems.

Abstract: A fabrication method for stretchable/conformable electronic and optoelectronic circuits and the resulting circuits. The method may utilize a variety of electronic materials including, but not limited to Silicon, GaAs, InSb, PbSe, CdTe, organic semiconductors, metal oxide semiconductors and related alloys or hybrid combinations of the aforementioned materials. While a wide range of fabricated electronic/optoelectronic devices, circuits, and systems could be manufactured using the embodied technology, a hemispherical image sensor is an exemplary advantageous optoelectronic device that is enabled by this technology. Other applications include but are not limited to wearable electronics, flexible devices for the internet-of-things, and advanced imaging systems.

Abstract: Systems and methods including bonding two or more separately formed circuit layers are provided using, for example, cold welding techniques. Processing techniques may be provided for combining inorganic and/or organic semiconductor devices in apparatus including, for example, microchips, optoelectronic devices, such as solar cells, photodetectors and organic light emitting diodes (OLEDs), and other apparatus with multi-layer circuitry. Methods of bonding preformed circuit layers may include the use of stamping and pressure bonding contacts of two or more circuit layers together. Such methods may find applicability, for example, in bonding circuitry to shaped substrates, including various rounded and irregular shapes, and may be used to combine devices with different structural properties, e.g. from different materials systems.

Abstract: An imaging transmitter (Tx) for free-space optical communications (FOC) includes a light source for providing modulated light, a pixel controller configured for dynamic selection of at least a portion of the modulated light to provide at least one pre-collimated FOC beam. An imaging lens assembly is for collimating the pre-collimated FOC beam to provide a transmitted FOC beam. The pixel controller controls a location of the pre-collimated FOC beam with respect to a focal surface of the imaging lens assembly so that the transmitted FOC beam is projected into a desired direction in object space that is determined by the location, or in the case that the light source is an emitting array, equivalently the transmitted FOC beam is projected into a unique angular volume described by the center line-of-sight (LOS) and instantaneous FOV (iFOV) of the emitting pixel(s) in the array.

Abstract: A method of forming a semiconductor device includes the steps of providing a first circuit layer including a plurality of first contacts, providing one or more semiconductor devices disposed on a stamp, the one or more semiconductor devices including a plurality of second contacts, bonding the plurality of second contacts to the plurality of first contacts via a pressure applied by the stamp.

Abstract: A device includes a three-dimensionally curved substrate, a patterned metal layer disposed on the curved substrate, and an array of optoelectronic devices, each optoelectronic device including an optoelectronic structure supported by the curved substrate. Each optoelectronic structure includes an inorganic semiconductor stack. The device further includes a set of contact stripes extending across the curved substrate, each optoelectronic structure being coupled to a respective contact stripe of the set of contact stripes. The array of optoelectronic devices is secured to the curved substrate via a bond between the patterned metal layer and the set of contact stripes.

Abstract: A fabrication method for stretchable/conformable electronic and optoelectronic circuits and the resulting circuits. The method may utilize a variety of electronic materials including, but not limited to Silicon, GaAs, InSb, PbSe, CdTe, organic semiconductors, metal oxide semiconductors and related alloys or hybrid combinations of the aforementioned materials. While a wide range of fabricated electronic/optoelectronic devices, circuits, and systems could be manufactured using the embodied technology, a hemispherical image sensor is an exemplary advantageous optoelectronic device that is enabled by this technology. Other applications include but are not limited to wearable electronics, flexible devices for the internet-of-things, and advanced imaging systems.

Abstract: Systems and methods including bonding two or more separately formed circuit layers are provided using, for example, cold welding techniques. Processing techniques may be provided for combining inorganic and/or organic semiconductor devices in apparatus including, for example, microchips, optoelectronic devices, such as solar cells, photodetectors and organic light emitting diodes (OLEDs), and other apparatus with multi-layer circuitry. Methods of bonding preformed circuit layers may include the use of stamping and pressure bonding contacts of two or more circuit layers together. Such methods may find applicability, for example, in bonding circuitry to shaped substrates, including various rounded and irregular shapes, and may be used to combine devices with different structural properties, e.g. from different materials systems.

Abstract: Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the device. In an embodiment, an organic transistor includes a drain electrode and a source electrode disposed over a first region of a substrate, a transition metal oxide layer disposed over and in direct physical contact with the drain electrode and the source electrode, an organic preferentially hole conducting channel layer disposed over the metal oxide and between the drain electrode and the source electrode, and a gate electrode disposed over the channel.

Abstract: Systems and methods including bonding two or more separately formed circuit layers are provided using, for example, cold welding techniques. Processing techniques may be provided for combining inorganic and/or organic semiconductor devices in apparatus including, for example, microchips, optoelectronic devices, such as solar cells, photodetectors and organic light emitting diodes (OLEDs), and other apparatus with multi-layer circuitry. Methods of bonding preformed circuit layers may include the use of stamping and pressure bonding contacts of two or more circuit layers together. Such methods may find applicability, for example, in bonding circuitry to shaped substrates, including various rounded and irregular shapes, and may be used to combine devices with different structural properties, e.g. from different materials systems.

Abstract: There is disclosed ultrahigh-efficiency single- and multi-junction thin-film solar cells. This disclosure is also directed to a substrate-damage-free epitaxial lift-off (“ELO”) process that employs adhesive-free, reliable and lightweight cold-weld bonding to a substrate, such as bonding to plastic or metal foils shaped into compound parabolic metal foil concentrators. By combining low-cost solar cell production and ultrahigh-efficiency of solar intensity-concentrated thin-film solar cells on foil substrates shaped into an integrated collector, as described herein, both lower cost of the module as well as significant cost reductions in the infrastructure is achieved.