Patents by Inventor Christopher L. Allyn

Christopher L. Allyn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-power III-V semiconductor device
    Patent number: 4498093
    Abstract: III-V semiconductor devices such as, e.g., MESFET, JFET, MOSFET, and IGFET devices are provided with relatively high-ohmic gates or wide gate finger widths as is desirable for maximum utilization of a semiconductor surface. For example, aluminum gate electrodes having a cross-sectional area of 1.2 square micrometer and a length of 300 micrometers or more are used. The resulting devices have unexpectedly high power handling capability.
    Type: Grant
    Filed: September 14, 1981
    Date of Patent: February 5, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Christopher L. Allyn, Peter G. Flahive, David E. Iglesias, Wolfgang O. W. Schlosser, Stuart H. Wemple
  • Graded bandgap rectifying semiconductor devices
    Patent number: 4353081
    Abstract: A unipolar, rectifying semiconductor device is described. Rectification is produced by an asymmetric potential barrier created by a sawtooth-shaped composition profile of Al.sub.x Ga.sub.1-x As between layers of n-type GaAs. Single and multiple barriers, as well as doped and undoped barriers, show rectification. Also described is the incorporation of this type of device in an infrared detector, a hot electron transistor and mixer diodes.
    Type: Grant
    Filed: January 29, 1980
    Date of Patent: October 5, 1982
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Christopher L. Allyn, Arthur C. Gossard, William Wiegmann