Abstract: A method of manufacturing a semiconductor device includes forming a second barrier layer over a first level, forming a first dielectric layer over the second barrier layer, forming a second dielectric layer over the first dielectric layer, etching the first and second dielectric layers to form an opening through the first dielectric layer and the second dielectric layer, and depositing an anti-reflective material in the opening at an optimal thickness. The optimal thickness is determined by minimizing a standard deviation of reflectivity of the anti-reflective material. After etching the first dielectric layer, the anti-reflective material can then be completely removed and the second barrier layer is etched to expose the first level. The trench and a via are then filled with a conductive material to form a feature.

Abstract: An improved method of forming circuit structures having linewidths which are smaller than what is achievable by conventional UV lithographic techniques on ultra-thin resist layers is provided. The method includes a hardmask which is patterned using an ultra-thin resist layer and is then trimmed to reduce the width of the hardmask before etching the underlying gate conductive layer.

Abstract: There is provided a method for applying a lower viscosity coating liquid onto a semiconductor wafer substrate so as to prevent adhesion loss and to maintain low defect level characteristics. This is achieved by priming the substrate with a bonding agent at a temperature in the range of 18° C. to 50° C. for a short amount of time. This is performed prior to the application of a liquid solvent. As a result, there is overcome the problems of poor adhesion to the substrates and high defect levels in the coated UTR films.

Abstract: There is provided a method of applying a developing liquid onto a semiconductor wafer substrate having a UTR film thereon so as to minimize unexposed film thickness loss during development. This is achieved by applying the developing liquid from a developer nozzle which is off-set from the central position of the wafer substrate. The developing liquid is allowed to contact the wafer substrate for less than 10 seconds. As a result, there is overcome the problems of unexposed film thickness loss and critical dimension variations due to the developer nozzle effects.

Abstract: A liquid dispenser system uses a container that has a reservoir in the bottom of the container and an opening in the top of the container. The dispenser has a cover, which covers the opening in the container and a draw tube that extends from the cover into the reservoir. An end of the draw tube in the reservoir has a plurality of inlets. The average cross-section of the reservoir below the inlets of the draw tube is less than one fourth of the average cross-section of the rest of the container. As a result of the difference in average cross-sections, the invention reduces the amount of liquid that the dispenser is not able to dispense, which reduces wasted liquid. In a production environment, the reduction in waste results in a reduction in down time.

Abstract: There is provided an improved resist coating/developing processing method and apparatus for a wafer track system so as to increase its throughput. In a preferred embodiment, this is achieved by integrating a wafer edge exposure unit with a temperature control plate unit into a single integrated processing unit having the functionality of the two separate processing units.

Abstract: There is provided a hotplate offset ring of a unique construction for use in a heat treatment unit of wafer track system so as to achieve a more uniform heat transfer. In a preferred embodiment, this is achieved by a plurality of spacer tabs formed on the offset ring which prevent the possibility of non-uniformities in a gap formed between the wafer and the hotplate by eliminating any raised surfaces.