Abstract: Disclosed are integrated circuit (IC) chip structures (e.g., radio frequency (RF) IC chip structures) and methods of forming the structures with an electrically insulative molding compound handler substrate. Each structure includes at least: an electrically insulative molding compound handler substrate; an insulator layer on the handler substrate; and one or more semiconductor devices (e.g., RF semiconductor devices) on the insulator layer. Each method includes at least: attaching a temporary carrier above back end of the line (BEOL) metal levels, which are over an interlayer dielectric layer covering one or more semiconductor devices; removing at least a portion of a semiconductor handler substrate, which is below the semiconductor device(s) and separated therefrom by an insulator layer; replacing the semiconductor handler substrate with a replacement handler substrate made of an electrically insulative molding compound; and removing the temporary carrier.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to dicing channels used in the singulatation process of interposers and methods of manufacture. The structure includes: one or more redistribution layers; a glass interposer connected to the one or more redistribution layers; a channel formed through the one or more redistribution layers and the glass interposer core, forming a dicing channel; and polymer material conformally filling the channel.

Abstract: Disclosed are integrated circuit (IC) chip structures (e.g., radio frequency (RF) IC chip structures) and methods of forming the structures with an electrically insulative molding compound handler substrate. Each structure includes at least: an electrically insulative molding compound handler substrate; an insulator layer on the handler substrate; and one or more semiconductor devices (e.g., RF semiconductor devices) on the insulator layer. Each method includes at least: attaching a temporary carrier above back end of the line (BEOL) metal levels, which are over an interlayer dielectric layer covering one or more semiconductor devices; removing at least a portion of a semiconductor handler substrate, which is below the semiconductor device(s) and separated therefrom by an insulator layer; replacing the semiconductor handler substrate with a replacement handler substrate made of an electrically insulative molding compound; and removing the temporary carrier.

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to dicing channels used in the singulatation process of interposers and methods of manufacture. The structure includes: one or more redistribution layers; a glass interposer connected to the one or more redistribution layers; a channel formed through the one or more redistribution layers and the glass interposer core, forming a dicing channel; and polymer material conformally filling the channel.

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Abstract: An ablation system includes an ablation tool configured to generate an energy beam to ablate an energy-sensitive material formed on at least one embedded feature of a workpiece. The ablation tool selects an initial fluence and an initial pulse rate of the energy beam to ablate a first portion of the energy-sensitive layer. The ablation tool further reduces at least one of the initial fluence and the initial pulse rate of the energy beam to ablate a second remaining portion of the energy-sensitive layer such that the embedded feature is exposed without being damaged or deformed.

Abstract: A laser etching system includes a laser source configured to generate a plurality of laser pulses during an etching pass. A workpiece is aligned with respect to the laser source. The workpiece includes an etching material that is etched in response to receiving the plurality of laser pulses. A mask reticle is interposed between the laser source and the workpiece. The mask reticle includes at least one mask pattern configured to regulate the fluence or a number of laser pulses realized by the workpiece such that a plurality of features having different depths with respect to one another are etched in the etching material.

Abstract: A fill head apparatus includes at least one chamber for holding a fluid. The chamber has an outlet for expelling the fluid. A vacuum device has an inlet for a suction device adjacent to the fluid outlet. A plurality of flexible and resilient sealing devices contact a top surface of a workpiece. The sealing devices are positioned on opposing sides of the chamber outlet and on opposing sides of the vacuum device inlet, such that the sealing devices create at least a partial seal around a cavity defined by the workpiece and the cavity is beneath both the chamber outlet and the vacuum outlet.

Abstract: Methods of removing material from a defective opening in a glass mold using a laser pulse, repairing a glass mold and a related glass mold for injection molded solder (IMS) are disclosed. In one embodiment, a method includes providing a glass mold including a plurality of solder filled openings; identifying a defective opening in the glass mold; removing material from the defective opening by applying a laser pulse to the defective opening; and repairing the defective opening by filling the defective opening with an amount of solder by: removing a redundant, non-defective solder portion from an opening in the glass mold by applying a laser pulse to the opening, and placing the redundant, non-defective solder portion in the defective opening.

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Abstract: A fill head apparatus includes at least one chamber for holding a fluid. The chamber has an outlet for expelling the fluid. A vacuum device has an inlet for a suction device adjacent to the fluid outlet. A plurality of flexible and resilient sealing devices contact a top surface of a workpiece. The sealing devices are positioned on opposing sides of the chamber outlet and on opposing sides of the vacuum device inlet, such that the sealing devices create at least a partial seal around a cavity defined by the workpiece and the cavity is beneath both the chamber outlet and the vacuum outlet.

Abstract: Methods of removing material from a defective opening in a glass mold using a laser pulse, repairing a glass mold and a related glass mold for injection molded solder (IMS) are disclosed. In one embodiment, a method includes providing a glass mold including a plurality of solder filled openings; identifying a defective opening in the glass mold; removing material from the defective opening by applying a laser pulse to the defective opening; and repairing the defective opening by filling the defective opening with an amount of solder by: removing a redundant, non-defective solder portion from an opening in the glass mold by applying a laser pulse to the opening, and placing the redundant, non-defective solder portion in the defective opening.

Abstract: Methods of removing material from a defective opening in a glass mold using a laser pulse, repairing a glass mold and a related glass mold for injection molded solder (IMS) are disclosed. In one embodiment, a method includes providing a glass mold including a plurality of solder filled openings; identifying a defective opening in the glass mold; removing material from the defective opening by applying a laser pulse to the defective opening; and repairing the defective opening by filling the defective opening with an amount of solder by: removing a redundant, non-defective solder portion from an opening in the glass mold by applying a laser pulse to the opening, and placing the redundant, non-defective solder portion in the defective opening.

Abstract: Methods of removing material from a defective opening in a glass mold using a laser pulse, repairing a glass mold and a related glass mold for injection molded solder (IMS) are disclosed. In one embodiment, a method includes providing a glass mold including a plurality of solder filled openings; identifying a defective opening in the glass mold; removing material from the defective opening by applying a laser pulse to the defective opening; and repairing the defective opening by filling the defective opening with an amount of solder by: removing a redundant, non-defective solder portion from an opening in the glass mold by applying a laser pulse to the opening, and placing the redundant, non-defective solder portion in the defective opening.

Abstract: Methods of removing material from a defective opening in a glass mold using a laser pulse, repairing a glass mold and a related glass mold for injection molded solder (IMS) are disclosed. In one embodiment, a method includes providing a glass mold including a plurality of solder filled openings; identifying a defective opening in the glass mold; removing material from the defective opening by applying a laser pulse to the defective opening; and repairing the defective opening by filling the defective opening with an amount of solder by: removing a redundant, non-defective solder portion from an opening in the glass mold by applying a laser pulse to the opening, and placing the redundant, non-defective solder portion in the defective opening.

Abstract: A method is provided for making of interconnect solder bumps on a wafer or other electronic device without depositing any significant amount of tin or other solder component from the solder onto the wafer surface which tin can cause shorts or other defects in the wafer. The method is particularly useful for well-known C4NP interconnect technology. In one aspect of the invention, a reducing gas flow rate is used to remove oxides from the solder surfaces and wafer pad surfaces and is of a sufficient determined or pre-determined flow and/or chamber or mold/wafer spacing to provide a gas velocity across the solder surfaces and wafer pad surfaces so that Sn or other contaminants do not deposit on the wafer surface during solder transfer. In another aspect, the transfer contact is performed below the melting point of the solder and subsequently heated to above the melting temperature while in transfer contact. The heated solder in contact with the wafer pads is transferred to the wafer pads.

Abstract: A tool and method is provided for repositioning a solder injection head. The tool includes a first moveable platform positioned on a first side of a workpiece chuck and a second moveable platform positioned on a second side of the workpiece chuck. A solder injection head has a seal configured to seal molten solder within the solder injection head when contacting a surface of the first moveable platform or the second moveable platform. The method includes moving a workpiece chuck and a starting platform to a position such that the starting platform is at a finishing position and a finishing platform is in a starting position.