Patents by Inventor Christopher Ladas

Christopher Ladas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8656065
    Abstract: A programmable interface circuit includes channel(s) including a digital logic block having terminals for receiving control signals from a process controller block, for providing logic signals, and terminals for receiving processed signal data. An analog logic block includes a current output digital to analog converter (DAC). An output circuit block includes first and second field terminals (S1,S2) and a sense resistor, wherein current from the DAC is coupled to S1 and the sense resistor is coupled to S2. The analog logic block includes a first and a second multi-channel multiplexer (MUX), an operational amplifier, and an analog to digital converter (ADC). The control signals automatically select from signal modes including an analog output (AO) mode, a digital output (DO) mode, an analog input (AI) mode, a digital input (DI) mode, and at least one additional signal mode provided by adding a sub-mode to the AI mode or DI mode.
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: February 18, 2014
    Assignee: Honeywell International Inc.
    Inventors: Paul Gerhart, Christopher Ladas, Angela Lordi, Benjamin J. Stad
  • Patent number: RE30282
    Abstract: A double master mask process for fabricating semiconductor integrated circuits is provided in which selectively etchable dielectric layers and ion implanted resistors are used to form dense integrated circuits with a minimum number of critical alignments. A first silicon dioxide silicon nitride layer used in conjunction with a first master photomask defines a base region and an isolation region which are self-aligned with respect to each other and with respect to resistor contact regions. After isolation and base diffusion, the first oxide/nitride layer is stripped away and a second oxide/nitride layer is grown. Using a photoresist mask, a predeposition layer for the resistor is then formed using ion implantation through the oxide/nitride layers. A second master photomask allows the formation of collector and emitter regions and base and resistor contact which are self-aligned with respect to each other.
    Type: Grant
    Filed: July 3, 1978
    Date of Patent: May 27, 1980
    Assignee: Motorola, Inc.
    Inventors: Merrill R. Hunt, Christopher A. Ladas, Sal T. Mastroianni