Abstract: Atomic object confinement apparatuses that include RF busses and systems including atomic object confinement apparatuses that include RF busses are provided. An example atomic object confinement apparatus comprises RF rail electrodes and an RF bus electrode(s). The RF rail electrodes form a periodic array of confinement segments within a central zone of the atomic object confinement apparatus and the RF bus electrodes are disposed in a perimeter zone disposed about the central zone. The RF rail electrodes and the RF bus electrode(s) are configured to generate a substantially periodic array of trapping regions when an oscillating voltage signal is applied to the RF rail electrodes and the RF bus electrode(s).

Abstract: A quantum computing system comprises a classical computing entity, a controller, and a quantum processor. The controller is configured to control operation of the quantum processor and communicate with the computing entity. The controller causes performance of syndrome circuit segments to generate syndromes of logical qubits. The syndrome circuit segment is performed at least partially by causing performance of a sequence of transportation operations and at-least-two-physical-qubits interactions. Each transportation operation of the sequence causes physical transport of at least one of a respective data qubit of the logical qubit or a respective ancilla qubit into a respective interaction zone defined by the quantum processor. A respective at-least-two-physical-qubits interaction is performed within the respective interaction zone.

Abstract: Atomic object confinement apparatuses that include RF busses and systems including atomic object confinement apparatuses that include RF busses are provided. An example atomic object confinement apparatus comprises RF rail electrodes and an RF bus electrode(s). The RF rail electrodes form a periodic array of confinement segments within a central zone of the atomic object confinement apparatus and the RF bus electrodes are disposed in a perimeter zone disposed about the central zone. The RF rail electrodes and the RF bus electrode(s) are configured to generate a substantially periodic array of trapping regions when an oscillating voltage signal is applied to the RF rail electrodes and the RF bus electrode(s).

Abstract: A system comprising a particle confinement assembly and one or more signal manipulation elements is provided. The particle confinement assembly defines a plurality of particle positions. Each signal manipulation element of the one or more signal manipulation elements (a) is associated with at least one respective position of the plurality of particle positions and (b) comprises an active nanophotonic component having a dynamically controllable optical effect. A respective signal manipulation element of the one or more signal manipulation elements is configured to, responsive to an incident signal being incident thereon and based on a state of the dynamically controllable optical effect, cause either (a) an induced signal to be incident on at least a portion of the at least one respective position or (b) an induced signal to be incident on a respective collection location corresponding to the at least one respective position.

Abstract: A high-voltage semiconductor switch is provided. The high-voltage semiconductor switch comprises one or more switch subcircuits, wherein each switch subcircuit may comprise one or more FET circuits and voltage-shifting transistor. The high-voltage semiconductor switch may be configured based on operational and environmental requirements, such as those of a quantum computing system, wherein the high-voltage switch may be located in a cryostat or vacuum chamber.

Abstract: Atomic object confinement apparatuses comprising periodic or quasi-periodic arrays of legs, including curved legs, and systems comprising such atomic object confinement apparatuses are provided. The atomic object confinement apparatus comprises a plurality of legs with each leg of the plurality of legs defining a one-dimensional trap segment; and a plurality of junctions with each junction of the plurality of junctions connecting at least two legs of the plurality of legs. The plurality of legs and the plurality of junctions are arranged into a periodic or quasi-periodic array of connected one-dimensional trap segments. The periodic array or quasi-periodic array comprises one or more smallest array elements. Each smallest array element of the one or more smallest array elements comprises at least one curved leg.

Abstract: A confinement assembly configured for confining quantum objects is provided. The confinement assembly includes a first substrate having potential generating elements formed thereon; and may include a second substrate that is secured with respect to the first substrate. The confinement assembly further includes at least a portion of a laser (e.g., gain media and at least part of a resonant structure) formed on the first and/or second substrate. The potential generating elements are operable for generating confinement regions configured for confining the quantum objects. The confinement assembly at least partially defines an optical path for causing an optical beam to interact with the at least a portion of the laser. The optical beam is (a) a seeding laser beam configured to control at least one property of light emitted by the laser or (b) an optical pumping beam configured to power the lasing activity of the laser.

Abstract: Atomic object confinement apparatuses that include RF busses and systems including atomic object confinement apparatuses that include RF busses are provided. An example atomic object confinement apparatus comprises RF rail electrodes and an RF bus electrode(s). The RF rail electrodes form a periodic array of confinement segments within a central zone of the atomic object confinement apparatus and the RF bus electrodes are disposed in a perimeter zone disposed about the central zone. The RF rail electrodes and the RF bus electrode(s) are configured to generate a substantially periodic array of trapping regions when an oscillating voltage signal is applied to the RF rail electrodes and the RF bus electrode(s).

Abstract: An ion trap apparatus is provided. The ion trap apparatus comprises two or more radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces; and two or more sequences of trapping and/or transport (TT) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the RF rails. The two or more RF rails and the two or more sequences of TT electrodes define an ion trap. The two or more sequences of TT electrodes are arranged into a number of zones. Each zone comprises wide matched groups of TT electrodes and at least one narrow matched group of TT electrodes. A wide TT electrode is longer and/or wider in a direction substantially parallel to the substantially parallel longitudinal axes of the RF rails than a narrow TT electrode.

Abstract: Atomic object confinement apparatuses comprising periodic or quasi-periodic arrays of legs, including curved legs, and systems comprising such atomic object confinement apparatuses are provided. The atomic object confinement apparatus comprises a plurality of legs with each leg of the plurality of legs defining a one-dimensional trap segment; and a plurality of junctions with each junction of the plurality of junctions connecting at least two legs of the plurality of legs. The plurality of legs and the plurality of junctions are arranged into a periodic or quasi-periodic array of connected one-dimensional trap segments. The periodic array or quasi-periodic array comprises one or more smallest array elements. Each smallest array element of the one or more smallest array elements comprises at least one curved leg.

Abstract: A high-voltage semiconductor switch is provided. The high-voltage semiconductor switch comprises one or more switch subcircuits, wherein each switch subcircuit may comprise one or more FET circuits and voltage-shifting transistor. The high-voltage semiconductor switch may be configured based on operational and environmental requirements, such as those of a quantum computing system, wherein the high-voltage switch may be located in a cryostat or vacuum chamber.

Abstract: An ion trap apparatus is provided. The ion trap apparatus comprises two or more radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces; and two or more sequences of trapping and/or transport (TT) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the RF rails. The two or more RF rails and the two or more sequences of TT electrodes define an ion trap. The two or more sequences of TT electrodes are arranged into a number of zones. Each zone comprises wide matched groups of TT electrodes and at least one narrow matched group of TT electrodes. A wide TT electrode is longer and/or wider in a direction substantially parallel to the substantially parallel longitudinal axes of the RF rails than a narrow TT electrode.

Abstract: An ion trap apparatus is provided. The ion trap apparatus comprises two or more radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces; and two or more sequences of trapping and/or transport (TT) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the RF rails. The two or more RF rails and the two or more sequences of TT electrodes define an ion trap. The two or more sequences of TT electrodes are arranged into a number of zones. Each zone comprises wide matched groups of TT electrodes and at least one narrow matched group of TT electrodes. A wide TT electrode is longer and/or wider in a direction substantially parallel to the substantially parallel longitudinal axes of the RF rails than a narrow TT electrode.

Abstract: An ion trap apparatus is provided. The ion trap apparatus comprises two or more radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces; and two or more sequences of trapping and/or transport (TT) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the RF rails. The two or more RF rails and the two or more sequences of TT electrodes define an ion trap. The two or more sequences of TT electrodes are arranged into a number of zones. Each zone comprises wide matched groups of TT electrodes and at least one narrow matched group of TT electrodes. A wide TT electrode is longer and/or wider in a direction substantially parallel to the substantially parallel longitudinal axes of the RF rails than a narrow TT electrode.

Abstract: A quantum computing D-state AC-Stark shift gate system comprises at least one gate manipulation source and one or more ions trapped in an ion trap. The at least one gate manipulation source is configured to generate a first gate manipulation signal and a second gate manipulation signal. The first and second gate manipulation signals couple an ion between a set of S-states and a set of D-states. The first and second gate manipulation signals apply a force to an ion of the one or more ions that is dependent on the internal state of the ion. The first and second gate manipulation signals are configured to couple internal states of the ions to their motional state without appreciably altering a population of the ions within the set of S-states.

Abstract: Fasteners are provided with an anchor and a cooperating locking element for quick operation on hurricane shutters and the like. The anchor has a slot which receives a locking element with arcuate edges designed for a mechanical advantage in manually inserting the element. Keyhole slots and a keeper provide for removal of the anchor for aesthetic reasons.