Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for configuring, accessing, identifying, and delivering a plurality of data structures that include interfaces configured to guide users through an elementary school writing curriculum based on interactions of users with one or more of the interfaces. In one aspect, a system comprises a data processing system for reading a plurality of data structures representing educational modules and ordering data specifying an order in which the educational modules and their corresponding lessons are rendered from a hardware storage device.

Abstract: In its many embodiments, the present invention provides certain 7-, 8-, and 10-substituted amino triazolo quinazoline derivatives of Formula (I): or a pharmaceutically acceptable salt thereof, wherein ring A, R1, R2, and R4 are as defined herein, pharmaceutical compositions comprising one or more such compounds (alone and in combination with one or more other therapeutic agents), and methods for their preparation and use, alone and in combination with other therapeutic agents, as antagonists of A2a and/or A2b receptors, and their use in the treatment of a variety of diseases, conditions, or disorders that are mediated, at least in part, by the adenosine A2a receptor and/or the adenosine A2b receptor.

Abstract: Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.

Abstract: A furniture member including a seat base, a seat assembly, a first and second rocker member, and a first and second rocker spring assembly. The seat assembly is movable relative to the seat base. The first and second rocker members are fixedly attached to the seat frame assembly. Each of the first and second rocker members includes a curved bottom surface in rolling contact with a surface of the seat base. The first and second rocker spring assemblies are secured to the seat base and the first and second rocker members, respectively. The first rocker spring assembly includes a first mount bracket, a second mount bracket, and a first spring that extends between the first and second mount brackets. The second rocker spring assembly includes a third mount bracket, a fourth mount bracket, and a second spring that extends between the third and fourth mount brackets.

Abstract: Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.

Abstract: Memory circuitry comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers and the conductive tiers of the laterally-spaced memory blocks extend from the memory-array region into a stair-step region. Individual stairs in the stair-step region comprise one of the conductive tiers. Conductive vias are individually directly against conducting material that is in the one conductive tier in one of the individual stairs. Insulator material in the stair-step region is directly above the stairs. An insulative-material lining is circumferentially around and extends elevationally along individual of the conductive vias between the individual conductive vias and the insulator material.

Abstract: A furniture member includes a base assembly, a frame assembly, a legrest mechanism, a support rod, and a sync mechanism. The frame assembly is movable relative to the base assembly among an upright position, a partially reclined position, and a fully reclined position. The legrest mechanism is movable relative to the frame assembly between a retracted position and a fully extended position. The support rod is supported by the frame assembly. The sync mechanism is coupled to and supported by the support rod. The sync mechanism is configured to prevent the frame assembly from moving from the upright position to the partially reclined position until the legrest mechanism reaches the fully extended position.

Abstract: A method used in forming an array of elevationally-extending strings of memory cells comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an etch-stop tier between a first tier and a second tier of the stack. The etch-stop tier is of different composition from those of the insulative tiers and the wordline tiers. Etching is conducted into the insulative tiers and the wordline tiers that are above the etch-stop tier to the etch-stop tier to form channel openings that have individual bases comprising the etch-stop tier. The etch-stop tier is penetrated through to extend individual of the channel openings there-through. After extending the individual channel openings through the etch-stop tier, etching is conducted into and through the insulative tiers and the wordline tiers that are below the etch-stop tier to extend the individual channel openings deeper into the stack below the etch-stop tier.

Abstract: Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.

Abstract: Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.

Abstract: A furniture member includes a base assembly, a frame assembly, a legrest mechanism, a support rod, and a sync mechanism. The frame assembly is movable relative to the base assembly among an upright position, a partially reclined position, and a fully reclined position. The legrest mechanism is movable relative to the frame assembly between a retracted position and a fully extended position. The support rod is supported by the frame assembly. The sync mechanism is coupled to and supported by the support rod. The sync mechanism is configured to prevent the frame assembly from moving from the upright position to the partially reclined position until the legrest mechanism reaches the fully extended position.

Abstract: Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.

Abstract: A furniture member includes a base assembly, a frame assembly, a legrest mechanism, a support rod, and a sync mechanism. The frame assembly is movable relative to the base assembly among an upright position, a partially reclined position, and a fully reclined position. The legrest mechanism is movable relative to the frame assembly between a retracted position and a fully extended position. The support rod is supported by the frame assembly. The sync mechanism is coupled to and supported by the support rod. The sync mechanism is configured to prevent the frame assembly from moving from the upright position to the partially reclined position until the legrest mechanism reaches the fully extended position.

Abstract: A method used in forming an array of elevationally-extending strings of memory cells comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an etch-stop tier between a first tier and a second tier of the stack. The etch-stop tier is of different composition from those of the insulative tiers and the wordline tiers. Etching is conducted into the insulative tiers and the wordline tiers that are above the etch-stop tier to the etch-stop tier to form channel openings that have individual bases comprising the etch-stop tier. The etch-stop tier is penetrated through to extend individual of the channel openings there-through. After extending the individual channel openings through the etch-stop tier, etching is conducted into and through the insulative tiers and the wordline tiers that are below the etch-stop tier to extend the individual channel openings deeper into the stack below the etch-stop tier.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers comprising memory-block regions having channel-material strings therein. Conductor-material contacts are directly against the channel material of individual of the channel-material strings. First insulator material is formed directly above the conductor-material contacts. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Second insulator material is formed directly above the first insulator material and the conductor-material contacts. The second insulator material is devoid of each of the (a) and (b). Third insulator material is formed directly above the second insulator material, the first insulator material, and the conductor-material contacts. The third insulator material comprises at least one of the (a) and (b).

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers comprising memory-block regions having channel-material strings therein. Conductor-material contacts are directly against the channel material of individual of the channel-material strings. First insulator material is formed directly above the conductor-material contacts. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Second insulator material is formed directly above the first insulator material and the conductor-material contacts. The second insulator material is devoid of each of the (a) and (b). Third insulator material is formed directly above the second insulator material, the first insulator material, and the conductor-material contacts. The third insulator material comprises at least one of the (a) and (b).

Abstract: A method used in forming an array of elevationally-extending strings of memory cells comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an etch-stop tier between a first tier and a second tier of the stack. The etch-stop tier is of different composition from those of the insulative tiers and the wordline tiers. Etching is conducted into the insulative tiers and the wordline tiers that are above the etch-stop tier to the etch-stop tier to form channel openings that have individual bases comprising the etch-stop tier. The etch-stop tier is penetrated through to extend individual of the channel openings there-through. After extending the individual channel openings through the etch-stop tier, etching is conducted into and through the insulative tiers and the wordline tiers that are below the etch-stop tier to extend the individual channel openings deeper into the stack below the etch-stop tier.

Abstract: A kit of components is provided for manufacturing a plurality of furniture members. The kit may include first and second armrest frames, a mounting cradle, a remote control device, an adaptor insert, and a control panel. The first armrest frame may include a first armrest panel having a first opening formed therein. The mounting cradle may include a first housing received through the first opening and engaging the first armrest panel. The remote control device may be removably received in the mounting cradle. The second armrest frame may include a second armrest panel having a second opening formed therein. The second opening may be identical to the first opening. The adaptor insert may be partially received through the second opening and may engage the second armrest panel. The adaptor insert may include a third opening. The control panel may include a second housing received through the third opening and engaging the adaptor insert.

Abstract: A kit of components is provided for manufacturing a plurality of furniture members. The kit may include first and second armrest frames, a mounting cradle, a remote control device, an adaptor insert, and a control panel. The first armrest frame may include a first armrest panel having a first opening formed therein. The mounting cradle may include a first housing received through the first opening and engaging the first armrest panel. The remote control device may be removably received in the mounting cradle. The second armrest frame may include a second armrest panel having a second opening formed therein. The second opening may be identical to the first opening. The adaptor insert may be partially received through the second opening and may engage the second armrest panel. The adaptor insert may include a third opening. The control panel may include a second housing received through the third opening and engaging the adaptor insert.

Abstract: A method used in forming an array of elevationally-extending strings of memory cells comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an etch-stop tier between a first tier and a second tier of the stack. The etch-stop tier is of different composition from those of the insulative tiers and the wordline tiers. Etching is conducted into the insulative tiers and the wordline tiers that are above the etch-stop tier to the etch-stop tier to form channel openings that have individual bases comprising the etch-stop tier. The etch-stop tier is penetrated through to extend individual of the channel openings there-through. After extending the individual channel openings through the etch-stop tier, etching is conducted into and through the insulative tiers and the wordline tiers that are below the etch-stop tier to extend the individual channel openings deeper into the stack below the etch-stop tier.