Abstract: A method including using a plurality of clamp electrodes of a substrate support to electrostatically secure a substrate during a process. The method further includes actively discharging a residual charge from the substrate after completion of the process based on at least one of contacting a backside of the substrate with a conductive lift pin or exposing the substrate to ultraviolet light. The method further includes raising a plurality of lift pins disposed in the substrate support to a first height to lift the substrate off of the substrate support after the discharging of the residual charge.

Abstract: A system includes a plasma source to generate a plasma including radical species, at least one component, associated with the plasma source, coated with a protective coating including fluorinated magnesium that mitigates recombination of the radical species, and a radical sensor including a filter disposed on a piezoelectric material to selectively react with the radical species.

Abstract: An electrostatic chuck assembly includes a first puck plate including one or more first functional elements, a second puck plate including one or more second functional elements, and an interface layer at least partially bonding the first puck plate and the second puck plate.

Abstract: A method includes performing an atomic layer deposition (ALD) process with respect to a plurality of target elements to coat interiors of the plurality of target elements with a protective coating. Performing the ALD process includes alternating delivery of a first precursor inside the plurality of target elements for a first duration to form an adsorption layer on the interiors of the plurality of target elements, alternating purging of the first precursor from the plurality of target elements for a second duration, and alternating delivery of a second precursor inside the plurality of target elements for a third duration to cause the second precursor to react with the adsorption layer and form a target layer on the interiors of the plurality of target elements.

Abstract: Embodiments of packaged chamber components and methods of packaging chamber components are provided herein. In some embodiments, a packaged chamber component for use in a process chamber includes: an insert having an annular trench disposed about a raised inner portion, wherein the annular trench is disposed between the raised inner portion and an outer lip, wherein a ledge couples the raised inner portion to the outer lip, wherein the ledge includes a first portion and a second portion disposed radially outward of the first portion, and wherein the second portion includes a resting surface that extends upward and radially outward of an upper surface of the first portion; and a chamber component disposed in the annular trench of the insert and supported by the resting surface such that one or more critical surfaces of the chamber component are spaced apart from the insert.

Abstract: Embodiments of the disclosure relate to articles, coated chamber components, and techniques of coating chamber components and systems. In particular, disclosed is a chamber component and methods of forming the chamber component that includes a substrate and a first layer disposed on the substrate, the first layer including a metal with a first atomic concentration. The chamber component further includes a second layer disposed on the first layer, the second layer including the metal with a second atomic concentration that is at least 5 percent higher than the first atomic concentration.

Abstract: Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.

Abstract: Described herein is a plasma resistant protective coating composition and bulk composition that provides enhanced erosion and corrosion resistance upon the coating composition's or the bulk composition's exposure to harsh chemical environment (such as hydrogen based and/or halogen based chemistries) and/or upon the coating composition's or the bulk composition's exposure to high energy plasma. Also described herein is a method of coating an article with a plasma resistant protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits a reduced number of yttrium based particles.

Abstract: A method includes affixing a supply apparatus to inlets for one or more channels of a chamber component. The channels provide one or more gas flow paths between a first side of the chamber component that comprises the inlets and a second side of the chamber component comprising outlets of the one or more channels. The method further includes affixing an exhaust apparatus to the outlets of the one or more channels. The method further includes performing a plurality of atomic layer deposition cycles to deposit a corrosion resistant coating on interior surfaces of the one or more channels of the chamber component.

Abstract: Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.

Abstract: Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.

Abstract: Embodiments of the disclosure relate to articles, coated chamber components, methods of coating chamber components and systems with a metal fluoride coating that includes at least one metal fluoride having a formula of M1xFw, M1xM2yFw or M1xM2yM3zFw, where at least one of M1, M2, or M3 is nickel. The metal fluoride coating can be formed directly on a substrate or on a coating of a substrate.

Abstract: Described herein is a plasma resistant protective coating composition and bulk composition that provides enhanced erosion and corrosion resistance upon the coating composition's or the bulk composition's exposure to harsh chemical environment (such as hydrogen based and/or halogen based chemistries) and/or upon the coating composition's or the bulk composition's exposure to high energy plasma. Also described herein is a method of coating an article with a plasma resistant protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits a reduced number of yttrium based particles.

Abstract: Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.

Abstract: Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times during a cleaning process while the surface of the wafer is hydrophobic. Methods of preventing the formation of silica agglomerates in a liquid during a pH transition from an alkaline pH to a neutral pH are also presented, including minimizing the turbulence in the liquid solution and reducing the temperature of the liquid solution during the transition.

Abstract: Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times during a cleaning process while the surface of the wafer is hydrophobic. Methods of preventing the formation of silica agglomerates in a liquid during a pH transition from an alkaline pH to a neutral pH are also presented, including minimizing the turbulence in the liquid solution and reducing the temperature of the liquid solution during the transition.

Abstract: Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times during a cleaning process while the surface of the wafer is hydrophobic. Methods of preventing the formation of silica agglomerates in a liquid during a pH transition from an alkaline pH to a neutral pH are also presented, including minimizing the turbulence in the liquid solution and reducing the temperature of the liquid solution during the transition.