Abstract: A wedge-shaped nozzle for dispensing fluids onto a round surface is disclosed. The nozzle dispenses the fluid with a generally uniform volume of fluid per unit area of the round surface to achieve rapidly a uniform thickness of applied fluid on the round surface. The wedge-shaped nozzle has orifices of equal size disposed on its bottom through which the fluid is dispensed. The orifices are disposed along arcs, with increasing numbers of orifices on the arcs at greater and greater distances of the arcs from the apex of the wedge-shaped nozzle. The numbers of the orifices on each arc are proportional to the area of an annular region determined by the arcs.

Abstract: The present invention relates to a system and a method for reducing the linewidth of ultra thin resist features. The present invention accomplishes this end by applying a densification process to an ultra thin resist having a thickness of less than about 2500 Å formed over a semiconductor structure. In one aspect of the present invention, the method includes providing a semiconductor substrate having a device film layer formed thereon. An ultra thin resist is then deposited over the device film layer. The ultra thin resist is patterned according to a desired structure or feature using conventional photolithography techniques. Following development, the ultra thin resist is implanted with a dopant. After the implantation is substantially completed, the device film layer is anisotropically etched.

Abstract: A defect categorization method is described. Two or more regions are defined on a die. These regions can be repeated for other dies on the same wafer or corresponding regions on other dies on other wafers. The wafer(s) are scanned for defects. The location of each defect, along with any other desired defect data is stored. The stored defect data is then categorizing by region or regions within a die. As a result of the categorization, optional defect generation predictions can be made or optional yield or kill ratio predictions can be made. Also, specific regions(s) can be rescanned based on the result of the categorization.

Abstract: In providing a bottom antireflective coating (BARC) in a semiconductor structure, a primer layer, for example, hexamethyldisilazane (HMDS), is provided on a substrate, and the BARC is formed on the primer. This results in a substantially defect free BARC layer, having a more uniform reflectivity which in turn leads to improve to photolithographic pattern resolution.

Abstract: There is provided an on-wafer apparatus and method for calibrating the sensitivity of a patterned wafer defect inspection tool during set-up which is used to detect defects on the surface of a semiconductor wafer during the stages of a fabrication process. A semiconductor wafer which is to be inspected for defects is provided. A calibration structure having known defects is introduced on a selected area of the semiconductor wafer which is to be inspected prior to, the inspection. The calibration structure includes a plurality of intentionally-introduced defects each being of a progressively smaller size dimension. Calibration of the sensitivity of the defect inspection tool is accomplished by scanning the semiconductor wafer with the calibration structure in order to determine the defects which are known to exist.

Abstract: In a method for detecting defects in both processed and unprocessed (blank) wafers, a manufacturer's identification mark is used to align wafers during inspection. The wafers, are subject to an initial scan under low magnification using an inspection tool and transferred to a high magnification analysis tool for more complete analysis. Prior to scanning, the wafers are oriented using the manufacturer's identification mark. The wafers become misaligned when transferred between tools. Using the manufacturer's identification mark, the wafers are reoriented and aligned. During scanning, defects in the wafer surface are located. The location of all defects are referenced to the location of the manufacturer's identification mark. To easily find defects when a wafer is transferred from tool to tool, the manufacturer's identification mark is located and, using a software algorithm, the wafer is oriented and aligned to the mark each time it is transferred and inspected.

Abstract: A method and apparatus for collecting defect includes forming a defect collecting structure on a wafer such that any residue defects tend to settle on the defect collecting structure instead of the circuit patterns. The defect collecting structure can be located within the die or on the scribelines between the dies. When the defect collecting structure is located in a die, it should have dimensions significantly larger than the dimensions of the surrounding circuits patterns. The defect collecting structure can include a plurality of defect collecting structures. The defect collecting structures can be contiguous or non-contiguous. The defect collecting structure(s) can occupy one hundredth of one percent of the die or more. The defect collecting structures can be created on a wafer by coating, exposing, developing, and optionally, detecting defects. The wafer is exposed with a mask that includes a pattern for the defect collecting structure(s).

Abstract: An improved particle-collecting cup using a fabrication protective device for use in processing semiconductor wafers includes a deflective surface, a protective shield and a protective lip to protect the surface of the semiconductor. The deflective surface encircles the semiconductor and extends both above and below the semiconductor at an inclined angle. The radius of the opening formed by the upper end of the deflective surface is at least as small as the radius of the semiconductor. The protective shield extends downward toward the semiconductor and the protective lip is inclined outward. Any particles spun off from the fluid coating of the semiconductor that may have been reflected are guided away from the surface of the semiconductor by the semiconductor fabrication extended particle collection cup.

Abstract: A method and system for measuring a fluid in a photolithography track is disclosed. The method includes dispensing the fluid in a photolithography track into a self-contained reservoir, and measuring the volume of the fluid using the self-contained reservoir. In a preferred embodiment, the reservoir receives the fluid from the dispenser through a drain pipe. By measuring the volume of fluid in this manner, spillage of fluid is prevented because the volume measuring apparatus in accordance with the present invention is self-contained. This prevents corrosion and other damage to the parts of the photolithography track which come into contact with the spilled fluid. With no spillage, a more consistent volume measurement is obtained. The volume measurement is also much quicker to perform than conventional methods.

Abstract: A wafer defect detection method is disclosed that includes coating a wafer with a resist, then exposing a first section of the wafer, then developing the resist, and finally inspecting the wafer for defects. Since certain types of defects occur more often in areas with fewer structures, these defects can be better detected by exposing a significant area of the wafer without a reticle or with a reticle that contains few structures in a section of the wafer. Since different defects tend to occur depending on the structure, different inspection techniques can be used in those areas to better detect the defects.

Abstract: A drip catching apparatus includes a trough 2 formed by a sidewall 26 and a drip catching surface 28 to prevent excess drops of a photoresist developer solution from dripping onto a semiconductor wafer 8 in a photoresist development cup 4. One or more holes 30 may be provided to drain the photoresist developer solution received by the drip trough 2.