Abstract: Systems and methods for virtual machine to co-processor passthrough. In one embodiment, a system includes a host, a guest virtual machine (GVM), and co-processor. The host operates a hypervisor, the GVM communicates with the host via a paravirtualized interface, and the co-processor communicates with the host via a link layer transport. The host allocates a hardware transport resource for the GVM and the co-processor, sends an address of the hardware transport resource and an identifier of the co-processor to the GVM via the paravirtualized interface, and sends the address of the hardware transport resource and an identifier of the GVM to the co-processor via the link layer transport. The GVM and the co-processor establish a communication channel based on the address of the hardware transport resource and received identifiers, and transmit data over the communication channel directly between the GVM and the co-processor without intervention by the host.

Abstract: Oxygen reduction catalysts for fuel cells are provided. The catalyst can be based on platinum-coated palladium nanotubes, or multiple twinned, crystalline silver nanowires. Also provided is a method of removing carbon dioxide using a membrane having basic functional groups, and a method of water electrolysis using a membrane having basic functional groups.

Abstract: A method of silylating porous silica films comprises: preparing a porous silica film; and grafting the film with a hydrophobic functional group while annealing the film. The porous silica film is a sol-gel silica film, a mesoporous silica film, in situ crystallized polycrystalline pure-silica zeolite (PSZ), spin-on PSZ, and spin-on PSZ MEL (or PSZ MEL-structural type) films. The hydrophobic functional group is trimethylchlorosilane (TMCS); dimethyldichlorosilane; methyltrichlorosilane; alkylchlorosilanes, such as (CH3(CH2)n)xSiCl4-x, where x is 1, 2, or 3; alkoxychlorosilanes; hexamethyldisilazane (HMDS), and/or aminosilanes. In addition, the steps of grafting and annealing the film are performed simultaneously, which imparts hydrofluoric acid resistance and reduces moisture adsorption to the film.