Patents by Inventor Christopher Liessner

Christopher Liessner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Circumferential contact-less line scanning of biometric objects
    Patent number: 8737698
    Abstract: Methods and/or systems for scanning biometric objects and compiling 2-dimensional digital images thereof, such images as can provide enhanced resolution, with reduced distortion.
    Type: Grant
    Filed: September 19, 2007
    Date of Patent: May 27, 2014
    Assignee: University of Massachusetts
    Inventors: Samson Mil'Shtein, John Palma, Christopher Liessner, Michael Baier, Anup Pillai, Ameya Shendye
  • Circumferential Contact-Less Line Scanning of Biometric Objects
    Publication number: 20100172548
    Abstract: Methods and/or systems for scanning biometric objects and compiling 2-dimensional digital images thereof, such images as can provide enhanced resolution, with reduced distortion.
    Type: Application
    Filed: September 19, 2007
    Publication date: July 8, 2010
    Inventors: Samson Mil'Shtein, John Palma, Christopher Liessner, Michael Baier, Anup Pillai, Ameya Shendye
  • FIELD EFFECT TRANSISTOR WITH SHIFTED GATE
    Publication number: 20100039164
    Abstract: A field effect transistor has a shifted gate such that the gate-source distance depends on the ratio of the threshold voltage to the drain voltage. In one embodiment, a switch may include two FETs: one FET in a series configuration and one FET in a shunt configuration. Providing a switch having at least one FET with a shifted gate allows increasing switching speed and decreasing insertion loss.
    Type: Application
    Filed: October 23, 2009
    Publication date: February 18, 2010
    Applicant: University of Massachusetts
    Inventors: Samson Mil'shtein, Christopher Liessner
  • Field effect transistor with shifted gate
    Publication number: 20070241366
    Abstract: A field effect transistor has a shifted gate such that the gate-source distance depends on the ratio of the threshold voltage to the drain voltage. In one embodiment, a switch may include two FETs: one FET in a series configuration and one FET in a shunt configuration. Providing a switch having at least one FET with a shifted gate allows increasing switching speed and decreasing insertion loss.
    Type: Application
    Filed: April 18, 2006
    Publication date: October 18, 2007
    Applicant: University of Massachusetts
    Inventors: Samson Mil'shtein, Christopher Liessner