Patents by Inventor Christopher Lim

Christopher Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • STRATEGIES FOR DIRECT RECRUITMENT OF REPAIR TEMPLATES TO CRISPR NUCLEASES
    Publication number: 20250084392
    Abstract: This invention relates to compositions of matter, methods and instruments for directly recruiting repair templates to CRISPR nucleases to stimulate homology-directed repair. Molecular “tethers” are described which result in an increase in the local concentration of repair templates at the site of the double-strand break made by a nuclease, thereby enhancing the rate of homology directed repair and suppressing undesired edits.
    Type: Application
    Filed: January 4, 2023
    Publication date: March 13, 2025
    Inventors: Brian Chaikind, Christopher Lim
  • Poly(arylene ether) dielectrics
    Patent number: 7179879
    Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:
    Type: Grant
    Filed: January 4, 2005
    Date of Patent: February 20, 2007
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Christopher Lim, Siu Choon Ng, Hardy Chan, Simon Chooi, Mei Sheng Zhou
  • Poly(arylene ether) dielectrics
    Patent number: 7166250
    Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:
    Type: Grant
    Filed: January 4, 2005
    Date of Patent: January 23, 2007
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Christopher Lim, Siu Choon Ng, Hardy Chan, Simon Chooi, Mei Sheng Zhou
  • Poly(arylene ether) dielectrics
    Patent number: 7071281
    Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:
    Type: Grant
    Filed: January 4, 2005
    Date of Patent: July 4, 2006
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Christopher Lim, Siu Choon Ng, Hardy Chan, Simon Chooi, Mei Sheng Zhou
  • Novel poly(arylene ether) dielectrics
    Publication number: 20050159576
    Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:
    Type: Application
    Filed: January 4, 2005
    Publication date: July 21, 2005
    Inventors: Christopher Lim, Siu Ng, Hardy Chan, Simon Chooi, Mei Zhou
  • Novel poly(arylene ether) dielectrics
    Publication number: 20050124767
    Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:
    Type: Application
    Filed: January 4, 2005
    Publication date: June 9, 2005
    Inventors: Christopher Lim, Siu Ng, Hardy Chan, Simon Chooi, Mei Zhou
  • Novel poly(arylene ether) dielectrics
    Publication number: 20050119420
    Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:
    Type: Application
    Filed: January 4, 2005
    Publication date: June 2, 2005
    Inventors: Christopher Lim, Siu Ng, Hardy Chan, Simon Chooi, Mei Zhou
  • Poly(arylene ether) dielectrics
    Patent number: 6846899
    Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:
    Type: Grant
    Filed: October 1, 2002
    Date of Patent: January 25, 2005
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Christopher Lim, Siu Choon Ng, Hardy Chan, Simon Chooi, Mei Sheng Zhou
  • Novel poly(arylene ether) dielectrics
    Publication number: 20040068082
    Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: 1
    Type: Application
    Filed: October 1, 2002
    Publication date: April 8, 2004
    Applicant: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Christopher Lim, Siu Choon Ng, Hardy Chan, Simon Chooi, Mei Sheng Zhou
  • Textile fabric for making bags
    Patent number: D438016
    Type: Grant
    Filed: October 19, 1999
    Date of Patent: February 27, 2001
    Inventor: Christopher Lim