Abstract: Disclosed herein are systems and methods for a method for controlling the temperature of a surface. In some embodiments, the method includes applying a variable input to a heat pump (e.g., a Peltier) in thermal communication with the surface. The variable input may vary about a voltage and may include a powered period and an unpowered period. In some embodiments, the method includes measuring a temperature of an element in thermal communication with the surface, determining, based on the temperature of the element, whether a temperature of the surface is within a safe temperature range for a user in thermal communication with the surface, in response to determining the surface is not within the safe temperature range, adjusting the voltage of the variable input to the heat pump, and in response to determining the surface is within the safe temperature range, continuing operation of the variable input at the voltage.

Abstract: A bit-widths determination method selects bit-widths for mixed-precision neural network computing on a target hardware platform. An activation quantization sensitivity (AQS) value is calculated for each convolution layer in a neural network. The AQS value indicates the sensitivity of convolution output to quantized convolution input. One or more convolution layers are grouped into a quantization group, which is to be executed by a corresponding set of target hardware. A group AQS value is calculated for each quantization group based on the AQS values of the convolution layers in the quantization group. Then bit-widths supported by the target hardware platform are selected for the corresponding quantization groups. The bit-widths are selected to optimize, under a given constraint, a sensitivity metric that is calculated based on each quantization group's group AQS value.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to seal ring structures with channels and methods of manufacture. The structure includes: a first wafer having a channel formed within a passivation layer; a second wafer having a protuberance which is insertable into the channel and which is bonded to the first wafer with eutectic bonding materials; and a plurality of stoppers or tabs extending within the channel and which provides a gap that has a dimension smaller than a gap formed in other portions of the channel.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to seal ring structures with channels and methods of manufacture. The structure includes: a first wafer having a channel formed within a passivation layer; a second wafer having a protuberance which is insertable into the channel and which is bonded to the first wafer with eutectic bonding materials; and a plurality of stoppers or tabs extending within the channel and which provides a gap that has a dimension smaller than a gap formed in other portions of the channel.

Abstract: Modified thermostable DNA polymerases having enhanced efficiency for incorporating unconventional nucleotides such as those labeled with fluorescein family dyes are advantageous in many in vitro DNA synthesis applications. Such enzymes are particularly useful for use in chain termination nucleic acid sequencing protocols, as are native forms of such enzymes. Genes encoding the modified enzymes and methods for their production and use offer cost and efficiency advantages for DNA sequencing.

Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:

Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:

Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:

Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:

Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:

Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:

Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:

Abstract: The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: 1

Abstract: Modified thermostable DNA polymerases having enhanced efficiency for incorporating unconventional nucleotides such as those labeled with fluorescein family dyes are advantageous in many in vitro DNA synthesis applications. Such enzymes are particularly useful for use in chain termination nucleic acid sequencing protocols, as are native forms of such enzymes. Genes encoding the modified enzymes and methods for their production and use offer cost and efficiency advantages for DNA sequencing.

Abstract: Modified thermostable DNA polymerases having enhanced efficiency for incorporating unconventional nucleotides such as those labeled with fluorescein family dyes are advantageous in many in vitro DNA synthesis applications. Such enzymes are particularly useful for use in chain termination nucleic acid sequencing protocols, as are native forms of such enzymes. Genes encoding the modified enzymes and methods for their production and use offer cost and efficiency advantages for DNA sequencing.

Abstract: Modified thermostable DNA polymerases having enhanced efficiency for incorporating unconventional nucleotides such as those labeled with fluorescein family dyes are advantageous in many in vitro DNA synthesis applications. Such enzymes are particularly useful for use in chain termination nucleic acid sequencing protocols, as are native forms of such enzymes. Genes encoding the modified enzymes and methods for their production and use offer cost and efficiency advantages for DNA sequencing.