Abstract: A stacked bit-line architecture utilizing high density cross-point memory arrays forms a DRAM semiconductor memory device. The true and complementary bit-line pairs connected to the respective memory cell arrays are formed in two metal layers, one above the other. A bit-line interconnector region is provided that uses a third interconnection layer together with the first and second layers to transpose the vertical stacking of each pair and to transpose the planar alignment of adjacent bit-line pairs. The DRAM memory cell array has a high density cross-point memory cell architecture that behaves electrically as a folded bit-line array.