Abstract: Devices and methods that use returned power (RP) measurements during microwave energy delivery to perform one or more functions. For example, such microwave devices and systems with one or more features to measure the returned microwave power. One or more measurements of the returned microwave power may be used to obtain information about one or more of: antenna shape, system status and system performance. One or more measurements of the returned microwave power shaping elements may also be used to obtain information about one or more properties of the target material. Devices and methods for delivering microwave energy to a variety of target materials to achieve a variety of desired microwave effects.

Abstract: A stacked bit-line architecture utilizing high density cross-point memory arrays forms a DRAM semiconductor memory device. The true and complementary bit-line pairs connected to the respective memory cell arrays are formed in two metal layers, one above the other. A bit-line interconnector region is provided that uses a third interconnection layer together with the first and second layers to transpose the vertical stacking of each pair and to transpose the planar alignment of adjacent bit-line pairs. The DRAM memory cell array has a high density cross-point memory cell architecture that behaves electrically as a folded bit-line array.