Abstract: A solar cell assembly having a flexible circuit is described. The solar cell assembly includes a solar cell having a solar-facing surface and a non-solar-facing surface, the solar cell comprising a cell corner. The solar cell assembly further includes a flexible circuit coupled to the non-solar-facing surface of the solar. The flexible circuit is substantially coextensive with the solar cell. The flexible circuit includes a flexible insulator including a plurality of edges aligned with the solar cell, a flexible corner extending past the cell corner, and a flexible tab extending from an edge of the plurality of edges. The flexible circuit includes a circuit substantially embedded in the flexible insulator. The circuit comprises a first electric contact exposed at a solar-facing side of the flexible corner, and a second electric contact exposed at a solar-facing side of the flexible tab.

Abstract: A solar panel includes a front portion. The front portion includes an electrical insulation layer and a front face sheet layer coupled to the electrical insulation layer. The solar panel also includes a cell coupled to the front portion to produce a tile. The solar panel also includes a back portion coupled to the tile. The back portion includes a honeycomb core layer and a back face sheet layer coupled to the honeycomb core layer.

Abstract: A method for producing a solar panel includes producing a tile. Producing the tile includes bonding an electrical insulation layer and a front face sheet layer together to produce a front portion of a substrate. Producing the tile also includes bonding the front portion of the substrate and a cell together. Producing the tile also includes bonding the front portion of the substrate and a wire together. The method also includes bonding a honeycomb core layer and a back face sheet layer to produce a back portion of the substrate. The method also includes bonding the tile and the back portion of the substrate together to produce the solar panel.

Abstract: A method for producing a solar panel includes producing a tile. Producing the tile includes bonding an electrical insulation layer and a front face sheet layer together to produce a front portion of a substrate. Producing the tile also includes bonding the front portion of the substrate and a cell together. Producing the tile also includes bonding the front portion of the substrate and a wire together. The method also includes bonding a honeycomb core layer and a back face sheet layer to produce a back portion of the substrate. The method also includes bonding the tile and the back portion of the substrate together to produce the solar panel.

Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

Abstract: A solar cell including a base region, a back surface field layer and a delta doping layer positioned between the base region and the back surface field layer.

Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least as first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

Abstract: A solar cell optimized for performance at high radiation doses, wherein the solar cell includes: a sub-cell comprised of a base and an emitter; the base of the sub-cell has a thickness of about 2 to 3 ?m; the base of the sub-cell is doped at about 1e14 cm?3 to 1e16 cm?3; and a reflector is inserted behind the sub-cell to maximize current generated by the sub-cell.

Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

Abstract: A solar cell design includes fabricating one or more gridlines for extracting photo-current on a front surface of the solar cell, wherein each of the gridlines is a metal grid and a cap layer, and at least a portion of the metal grid is deposited on the cap layer; and controlling an alignment of the metal grid relative to the cap layer, and a width of the cap layer relative to a width of the metal grid, so that a minimum cap edge offset distance value is about 1 ?m or more. The alignment of the metal grid relative to the cap layer and the width of the cap layer relative to the width of the metal grid are controlled at areas on the front surface of the solar cell opposite where welding occurs on a back-side of the solar cell. The alignments and widths of the metal grid relative to the cap layer are controlled by a photomask.

Abstract: Provided is a multijunction photovoltaic device, including: a first subcell and a second subcell. The first cell includes a base semiconductor layer and a second semiconductor layer. The base semiconductor layer includes a Group III-V semiconductor material. The second subcell includes an absorber layer. The absorber layer includes an organometallic halide ionic solid perovskite semiconductor material.

Abstract: In one aspect, semiconductor structures are described herein. A semiconductor structure, in some implementations, comprises a first semiconductor layer having a first bandgap and a first lattice constant and a second semiconductor layer having a second bandgap and a second lattice constant. The second lattice constant is lower than the first lattice constant. Additionally, a transparent metamorphic buffer layer is disposed between the first semiconductor layer and the second semiconductor layer. The buffer layer has a constant or substantially constant bandgap and a varying lattice constant. The varying lattice constant is matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer. The buffer layer comprises a first portion comprising AlyGazIn(1-y-z)As and a second portion comprising GaxIn(1-x)P.

Abstract: A panel including at least one solar cell having a cell comprised of gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) with a back surface field (BSF) comprised of aluminum gallium arsenide (AlGaAs) or indium aluminum gallium arsenide (InAlGaAs) p-type doped for enhanced operation of the solar cell at temperatures less than ?50° C. In one example, the back surface field comprises AlxGa1-xAs or In0.01AlxGa1-xAs, wherein x is less than about 0.8, for example, 0.2. The back surface field may be p-type doped with zinc (Zn) or carbon (C).

Abstract: A solar cell having a cell comprised of gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) with a back surface field (B S F) comprised of aluminum gallium arsenide (AlGaAs) or indium aluminum gallium arsenide (InAlGaAs) p-type doped for enhanced operation of the solar cell at temperatures less than ?50° C. In one example, the back surface field comprises AlxGa1-xAs or In0.01AlxGa1-xAs, wherein x is less than about 0.8, for example, 0.2. The back surface field may be p-type doped with zinc (Zn) or carbon (C).

Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

Abstract: A multijunction solar cell includes a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type. A patterned emitter is formed at a first surface of the base substrate. The patterned emitter comprises a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor. The base substrate including the patterned emitter form a first solar subcell. The multijunction solar cell further comprises an upper structure comprising one or more additional solar subcells over the first solar subcell. Methods of making a multijunction solar cell are also described.