Abstract: A new and useful door locking device, door locking assembly, and method of constructing a door locking assembly is provided. The door locking device includes first and second subassemblies configured to connect to a door jamb and door, respectively, a first locking member connected to one of the subassemblies and a second locking member connected to the other subassembly. The first and second locking members are selectively engaged to lock the door with the jamb and selectively disengaged to unlock the door from the jamb. The connection of the second subassembly to the door being is designed to allow adjustment of the one of the locking components in a plurality of directions, to enable the door locking device to be adjusted provide a predetermined locking orientation of the first and second locking members.

Abstract: A new and useful door locking device, door locking assembly, and method of constructing a door locking assembly is provided. The door locking device includes first and second subassemblies configured to connect to a door jamb and door, respectively, a first locking member connected to one of the subassemblies and a second locking member connected to the other subassembly. The first and second locking members are selectively engaged to lock the door with the jamb and selectively disengaged to unlock the door from the jamb. The connection of the second subassembly to the door being is designed to allow adjustment of the one of the locking components in a plurality of directions, to enable the door locking device to be adjusted provide a predetermined locking orientation of the first and second locking members.

Abstract: A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer.