Patents by Inventor Christopher Malec

Christopher Malec has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DECENTRALIZED COMPUTING CAPABILITIES WITH FUNCTIONS AND AUTOMATION
    Publication number: 20250106051
    Abstract: Systems, devices, and methods provide for smart contract automation for triggering smart contract functions. The smart contract automation may receive log data, provide an upkeep payload to a workflow, the upkeep payload comprising one or more active upkeeps. The smart contract automation may determine, by the proposal workflow, whether the one or more active upkeeps is an eligible upkeep. The smart contract automation may determine, by the smart contract automation system, a reportable result based on the eligible upkeep and the log data. The smart contract automation may transmit the reportable result to a blockchain.
    Type: Application
    Filed: September 26, 2024
    Publication date: March 27, 2025
    Applicant: SmartContract Chainlink Limited SEZC
    Inventors: Akshay Aggarwal, Marthinus Coenraad De Clercq Wentzel, Ryan Robert Hall, Amir Yahalom, Anirudh Ajith Warrier, Kejin Fan, Christopher Malec, Lei Shi, Oliver Griswold Townsend, Vlad Ghelesel, Fergal Patrick Gribben
  • Hybrid domain wall-hall cross device
    Patent number: 9276197
    Abstract: A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center of the Hall cross. The device provides a magnetoelectronic MRAM storage cell with improved performance characteristics. Binary storage is associated with a trapped domain wall having one of two stable orientations. The bit state can be written using current driven domain wall motion. This is a STT process in which the write current is applied to a thin film, low impedance wire. Heating is minimized and no wear-out mechanism is known to exist.
    Type: Grant
    Filed: November 10, 2014
    Date of Patent: March 1, 2016
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Mark B. Johnson, Christopher Malec
  • Hybrid Domain Wall-Hall Cross Device
    Publication number: 20150137200
    Abstract: A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center of the Hall cross. The device provides a magnetoelectronic MRAM storage cell with improved performance characteristics. Binary storage is associated with a trapped domain wall having one of two stable orientations. The bit state can be written using current driven domain wall motion. This is a STT process in which the write current is applied to a thin film, low impedance wire. Heating is minimized and no wear-out mechanism is known to exist.
    Type: Application
    Filed: November 10, 2014
    Publication date: May 21, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Mark B. Johnson, Christopher Malec