Abstract: An embodiment method includes determining an upper vacuum condition, a lower vacuum condition, a bonding gap distance, and a striker pressure condition based on measuring residual distortions from a previously bonded wafer. The method includes applying the upper vacuum condition to an upper wafer using an upper wafer holder, the upper vacuum condition applied to a backside of the upper wafer, and the upper wafer having a front side being opposite of the backside. The method includes applying the lower vacuum condition to a lower wafer using a lower wafer holder. The method includes positioning the front side of the upper wafer over the front side of the lower wafer to create the bonding gap distance between the upper wafer and the lower wafer and striking the backside of the upper wafer with a striker using the striker pressure condition to bond the front side of the upper wafer and the front side of the lower wafer together.

Abstract: Polishing slurries including ceria nanoparticles and methods of polishing materials using slurries including ceria nanoparticles. The slurries may include colloidal ceria nanoparticles having at least 20% surface concentration of Ce3+ oxidation state cerium atoms. The methods of polishing materials may include continuously flowing a slurry over a surface of the material. The slurry may include deionized water, colloidal ceria nanoparticles having at least 20% surface concentration of Ce3+ oxidation state cerium atoms, where the colloidal ceria nanoparticles include a concentration having a range of 0.01 wt. % to 3.0 wt. %, and hydrogen peroxide including a concentration having a range of 0.015 wt. % to 1.5 wt. %. The method may also include chemically and mechanically removing a portion of the material. The removed portion may include the surface of the material exposed to the slurry.