Abstract: Systems, methods, and apparatus are provided for capacitance balancing in semiconductor devices. An apparatus comprising a sense amplifier having first and second nodes and configured to amplify a voltage difference between the first and second nodes. A first global sense line is coupled to the first node and a plurality of first locals sense lines are coupled in parallel to the first global sense line. A second global sense line is coupled to the second node and a plurality of second local sense lines are coupled in parallel to the second global sense line. Control circuitry is configured to electrically connect the selected first local sense line of the plurality of first local sense lines to the first global sense line and electrically connect at least two second local sense lines of the plurality of second local sense lines to the second global sense line.

Abstract: The present disclosure includes apparatuses and methods related to a sense amp capacitance component in memory. An example apparatus can include a sense amplifier connected to a first digit line and a second digit line and a capacitance component coupled to the first digit line and configured to, in association with sensing a memory cell connected to the second digit line, be enabled to increase a voltage of the first digit line is increased to compensate for capacitive coupling corresponding to the second digit line.

Abstract: The present disclosure includes apparatuses and methods related to a sense amp balancing component in memory. An example apparatus can include a sense amp connected to a first digit line and a second digit line, and a controller configured to: send a first activation signal to the first digit line at a first time during a compensation window, and send a second activation signal to the second digit line at a second time during the compensation window, wherein the first time and the second time have a time difference that corresponds to a threshold voltage difference between the first digit line and the second digit line.

Abstract: Systems, methods, and apparatus are provided for capacitance balancing in semiconductor devices. An apparatus comprising a sense amplifier having first and second nodes and configured to amplify a voltage difference between the first and second nodes. A first global sense line is coupled to the first node and a plurality of first locals sense lines are coupled in parallel to the first global sense line. A second global sense line is coupled to the second node and a plurality of second local sense lines are coupled in parallel to the second global sense line. Control circuitry is configured to electrically connect the selected first local sense line of the plurality of first local sense lines to the first global sense line and electrically connect at least two second local sense lines of the plurality of second local sense lines to the second global sense line.

Abstract: Apparatuses and methods for storing redundancy repair information for memories are disclosed. An example apparatus includes a fuse array, a repair plane, and a decode logic and control circuit. The fuse array stores repair information that includes repair commands and load repair addresses. The load repair addresses include a respective repair address. The repair plane includes a block of memory and repair logic. The block of memory includes a plurality of redundant memory and the repair logic includes a plurality of repair blocks. Each repair block is associated with a respective one of the plurality of redundant memory and each repair block of the plurality of repair blocks stores a repair address. The decode logic and control circuit reads the repair information and decodes the repair commands, and loads repair addresses into the plurality of repair blocks based at least in part on the decoded repair commands.

Abstract: Apparatuses and methods for latching redundancy repair addresses at a memory are disclosed. An example apparatus includes block of memory including primary memory and a plurality of redundant memory units and repair logic. The repair logic including a plurality of repair blocks. A repair block of the plurality of repair blocks is configured to receive a set of repair address bits associated with a memory address for defective memory of the block of memory and to latch the set of repair address bits at a respective set of latches. The repair block is further configured to, in response to receipt of a memory access request corresponding to the set of repair address bits latched at the repair block, redirecting the memory access request to a redundant memory unit associated with the repair block.

Abstract: Apparatuses and methods for latching redundancy repair addresses at a memory are disclosed. An example apparatus includes block of memory including primary memory and a plurality of redundant memory units and repair logic. The repair logic including a plurality of repair blocks. A repair block of the plurality of repair blocks is configured to receive a set of repair address bits associated with a memory address for defective memory of the block of memory and to latch the set of repair address bits at a respective set of latches. The repair block is further configured to, in response to receipt of a memory access request corresponding to the set of repair address bits latched at the repair block, redirecting the memory access request to a redundant memory unit associated with the repair block.

Abstract: Apparatuses and methods for storing redundancy repair information for memories are disclosed. An example apparatus includes a fuse array, a repair plane, and a decode logic and control circuit. The fuse array stores repair information that includes repair commands and load repair addresses. The load repair addresses include a respective repair address. The repair plane includes a block of memory and repair logic. The block of memory includes a plurality of redundant memory and the repair logic includes a plurality of repair blocks. Each repair block is associated with a respective one of the plurality of redundant memory and each repair block of the plurality of repair blocks stores a repair address. The decode logic and control circuit reads the repair information and decodes the repair commands, and loads repair addresses into the plurality of repair blocks based at least in part on the decoded repair commands.

Abstract: Apparatuses and methods for storing redundancy repair information for memories are disclosed. An example apparatus includes a fuse array, a repair plane, and a decode logic and control circuit. The fuse array stores repair information that includes repair commands and load repair addresses. The load repair addresses include a respective repair address. The repair plane includes a block of memory and repair logic. The block of memory includes a plurality of redundant memory and the repair logic includes a plurality of repair blocks. Each repair block is associated with a respective one of the plurality of redundant memory and each repair block of the plurality of repair blocks stores a repair address. The decode logic and control circuit reads the repair information and decodes the repair commands, and loads repair addresses into the plurality of repair blocks based at least in part on the decoded repair commands.

Abstract: Apparatuses and methods for latching redundancy repair addresses at a memory are disclosed. An example apparatus includes block of memory including primary memory and a plurality of redundant memory units and repair logic. The repair logic including a plurality of repair blocks. A repair block of the plurality of repair blocks is configured to receive a set of repair address bits associated with a memory address for defective memory of the block of memory and to latch the set of repair address bits at a respective set of latches. The repair block is further configured to, in response to receipt of a memory access request corresponding to the set of repair address bits latched at the repair block, redirecting the memory access request to a redundant memory unit associated with the repair block.

Abstract: Apparatuses and methods for storing redundancy repair information for memories are disclosed. An example apparatus includes a fuse array, a repair plane, and a decode logic and control circuit. The fuse array stores repair information that includes repair commands and load repair addresses. The load repair addresses include a respective repair address. The repair plane includes a block of memory and repair logic. The block of memory includes a plurality of redundant memory and the repair logic includes a plurality of repair blocks. Each repair block is associated with a respective one of the plurality of redundant memory and each repair block of the plurality of repair blocks stores a repair address. The decode logic and control circuit reads the repair information and decodes the repair commands, and loads repair addresses into the plurality of repair blocks based at least in part on the decoded repair commands.

Abstract: Apparatuses and methods for latching redundancy repair addresses at a memory are disclosed. An example apparatus includes block of memory including primary memory and a plurality of redundant memory units and repair logic. The repair logic including a plurality of repair blocks. A repair block of the plurality of repair blocks is configured to receive a set of repair address bits associated with a memory address for defective memory of the block of memory and to latch the set of repair address bits at a respective set of latches. The repair block is further configured to, in response to receipt of a memory access request corresponding to the set of repair address bits latched at the repair block, redirecting the memory access request to a redundant memory unit associated with the repair block.

Abstract: A DRAM device includes a mode register that is programmed to select one of two modes for operating data bus terminals in the device. A timing circuit generates timing signals in synchronism with the clock signal that correspond to the selected mode. The timing signals are combined with read data signals to generate corresponding timed read data signals. These timed data signals and termination signals from the timing circuit are applied to pull-up and pull-down circuitry, which drive respective pull-up and pull-down transistors coupled to the data bus terminals. The transistors drive the data bus terminals to either a first or a second voltage if the first mode of operation is selected and to either a third or a fourth voltage if the second mode of operation is selected. Additionally, the pull-up and pull-down transistors bias the data bus terminals to respective voltages corresponding to the selected operating mode.

Abstract: An apparatus and method for selecting a storage location in a memory device including receiving at least one of a pre-decoded location address signal, a match signal, and a redundant location address enable signal, enabling one of a decoder and a redundant decoder in response to the match signal, wherein the decoder is operable to generate a location select signal for selecting a first location, the decoder being responsive to the pre-decoded location address signal, and wherein the redundant decoder is operable to generate a redundant location select signal for selecting a second location, the redundant decoder being responsive to the redundant location address enable signal, and terminating one of the generation of a location select signal and the generation of a redundant location select signal in response to a precharge signal.

Abstract: An apparatus and method for selecting a storage location in a memory device including receiving at least one of a pre-decoded location address signal, a match signal, and a redundant location address enable signal, enabling one of a decoder and a redundant decoder in response to the match signal, wherein the decoder is operable to generate a location select signal for selecting a first location, the decoder being responsive to the pre-decoded location address signal, and wherein the redundant decoder is operable to generate a redundant location select signal for selecting a second location, the redundant decoder being responsive to the redundant location address enable signal, and terminating one of the generation of a location select signal and the generation of a redundant location select signal in response to a precharge signal.

Abstract: A DRAM device includes a mode register that is programmed to select one of two modes for operating data bus terminals in the device. A timing circuit generates timing signals in synchronism with the clock signal that correspond to the selected mode. The timing signals are combined with read data signals to generate corresponding timed read data signals. These timed data signals and termination signals from the timing circuit are applied to pull-up and pull-down circuitry, which drive respective pull-up and pull-down transistors coupled to the data bus terminals. The transistors drive the data bus terminals to either a first or a second voltage if the first mode of operation is selected and to either a third or a fourth voltage if the second mode of operation is selected. Additionally, the pull-up and pull-down transistors bias the data bus terminals to respective voltages corresponding to the selected operating mode.

Abstract: A calibration circuit for calibrating the input data path of a digital circuit is disclosed. A simple string of a repeating data pattern such as, e.g., “1100,” is sent on the data path. The digital circuit captures the data using a clock signal, examines the data signal for the predetermined pattern and adjusts a delay applied to the data signal until the predetermined pattern is recognized. Then the delay is further adjusted until the predetermined pattern is no longer recognized indicating that an edge of the eye of the data is near a clocking edge of the clocking signal. The delay applied to the data signal is then further adjusted by a predetermined amount to position the clock edge near the center of the data eye.

Abstract: A method and apparatus to convert parallel data to serial data. More specifically, there is provided a parallel-to-serial converter comprising a data pipeline configured to receive parallel data, and binary sort logic comprising a plurality of switches arranged to receive the parallel data from the data pipeline, and configured to output the parallel data serially.

Abstract: A DRAM device includes a mode register that is programmed to select one of two modes for operating data bus terminals in the device. A timing circuit generates timing signals in synchronism with the clock signal that correspond to the selected mode. The timing signals are combined with read data signals to generate corresponding timed read data signals. These timed data signals and termination signals from the timing circuit are applied to pull-up and pull-down circuitry, which drive respective pull-up and pull-down transistors coupled to the data bus terminals. The transistors drive the data bus terminals to either a first or a second voltage if the first mode of operation is selected and to either a third or a fourth voltage if the second mode of operation is selected. Additionally, the pull-up and pull-down transistors bias the data bus terminals to respective voltages corresponding to the selected operating mode.

Abstract: The present invention provides a clock signal input circuit that is able to provide inverse internal clock signals generated by the same input buffer as the address and data signals which exhibit reduced skew. When a skewed external noninverse clock signal and a corresponding external inverse clock signal are passed through respective reference voltage input buffers there is no reduction in skew between the two internal signals. In a preferred embodiment, the invention provides back to back inverters connected to both lines carrying the noninverted and inverted internal clock signals. The slower internal clock signal has an extra inverter driving it when it switches states and the faster internal clock signal has an extra inverter fighting it when it switches states. The skew of the two signals is reduced, allowing for faster operation of the integrated circuit and a reduction in misread data signals.