Patents by Inventor Christopher Muratore

Christopher Muratore has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200090933
    Abstract: Methods of making molybdenum sulfide (MoS2) on a stretchable substrate are disclosed. The method includes magnetron sputtering MoS2 onto a stretchable substrate, such as a stretchable polymeric material, at low temperatures to form a film precursor, and illumination annealing the film precursor to form high quality MoS2. The illumination source may be a laser or other source of radiation. Also, two-dimensional nanoelectronic devices made by the methods and/or from the high quality MoS2 are disclosed.
    Type: Application
    Filed: July 31, 2019
    Publication date: March 19, 2020
    Applicant: University of Dayton
    Inventors: Christopher Muratore, Michael E. McConney, Travis E. Shelton, Nicholas R. Glavin, John E. Bultman, Andrey A. Voevodin
  • Publication number: 20180308692
    Abstract: Methods of making molybdenum sulfide (MoS2) on a stretchable substrate are disclosed. The method includes magnetron sputtering MoS2 onto a stretchable substrate, such as a stretchable polymeric material, at low temperatures to form a film precursor, and illumination annealing the film precursor to form high quality MoS2. The illumination source may be a laser or other source of radiation. Also, two-dimensional nanoelectronic devices made by the methods and/or from the high quality MoS2 are disclosed.
    Type: Application
    Filed: April 25, 2018
    Publication date: October 25, 2018
    Applicant: University of Dayton
    Inventors: Christopher Muratore, Michael E. McConney, Travis E. Shelton, Nicholas R. Glavin, John E. Bultman, Andrey A. Voevodin
  • Publication number: 20150345010
    Abstract: Methods for magnetically enhanced physical vapor deposition are disclosed. The methods include providing a magnetically enhanced vapor deposition device defining a vapor deposition chamber, having a magnetic field source proximate a magnetron target that is positioned within the vapor deposition chamber and coupled to a power source, and having a substrate holder positioned within the vapor deposition chamber, placing a substrate in the substrate holder, activating the magnetic field source to provide a magnetic field that controls a charged particle flux within the physical vapor deposition chamber, and activating the power source thereby depositing a few-layer film of the material comprising the magnetron target onto the substrate. The few-layer film may be a transition metal dichalcogenide, such as MoS2.
    Type: Application
    Filed: September 30, 2014
    Publication date: December 3, 2015
    Applicants: University of Dayton, Government of the United States, as Represented by the Secretary of the Air Force
    Inventors: Christopher Muratore, John Bultman, Andrey A. Voevodin, Jianjun Hu
  • Publication number: 20110308461
    Abstract: An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.
    Type: Application
    Filed: August 17, 2010
    Publication date: December 22, 2011
    Inventors: Scott G. Walton, Darrin Leonhardt, Robert A. Meger, Richard Fernsler, Christopher Muratore
  • Publication number: 20090314633
    Abstract: This invention provides a means to deposit thin films and coatings on a substrate using an electron beam generated plasma. The plasma can be used as an ion source in sputter applications, where the ions are used to liberate material from a target surface which can then condense on a substrate to form the film or coating. Alternatively, the plasma may be combined with existing deposition sources including those based on sputter or evaporation techniques. In either configuration, the plasma serves as a source of ion and radical species at the growing film surface in reactive deposition processes. The electron beam large area deposition system (EBELADS) is a new approach to the production of thin films or coatings up to and including several square meters.
    Type: Application
    Filed: August 27, 2009
    Publication date: December 24, 2009
    Applicant: The Gov. of the USA, as represented by the Secretary of the Navy
    Inventors: Scott G. Walton, Darrin Leonhardt, Robert A. Meger, Richard Fernsler, Christopher Muratore
  • Publication number: 20090032143
    Abstract: An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.
    Type: Application
    Filed: July 30, 2008
    Publication date: February 5, 2009
    Inventors: Scott G Walton, Darrin Leonhardt, Robert A. Meger, Richard F. Fernsler, Christopher Muratore
  • Publication number: 20050281958
    Abstract: An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.
    Type: Application
    Filed: June 22, 2004
    Publication date: December 22, 2005
    Inventors: Scott Walton, Darrin Leonhardt, Robert Meger, J. Fernsler, Christopher Muratore
  • Publication number: 20050230242
    Abstract: A large area metallization pretreatment and surface activation system that uses an electron beam-produced plasma capable of delivering substantial ion and radical fluxes at low temperatures over large areas of an organic plastic or polymer material. The ion and radical fluxes physically and chemically alter the surface structure of the organic plastic or polymer material thereby improving the ability of a film to adhere to the material.
    Type: Application
    Filed: April 14, 2004
    Publication date: October 20, 2005
    Inventors: Darrin Leonhardt, Scott Walton, Robert Meger, Christopher Muratore
  • Patent number: H2209
    Abstract: A large area metallization pretreatment and surface activation system that uses an electron beam-produced plasma capable of delivering substantial ion and radical fluxes at low temperatures over large areas of an organic plastic or polymer material. The ion and radical fluxes physically and chemically alter the surface structure of the organic plastic or polymer material thereby improving the ability of a film to adhere to the material.
    Type: Grant
    Filed: April 14, 2004
    Date of Patent: February 5, 2008
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Darrin Leonhardt, Scott G. Walton, Robert A. Meger, Christopher Muratore