Abstract: A dual sided contact switch has a first independent drain/source region of a multi-gate active device. The dual sided contact switch also has a first shared drain/source region of the multi-gate active device. The dual sided contact switch has a second independent drain/source region of the multi-gate active device, adjacent to the first shared drain/source region. The dual sided contact switch also has a second shared drain/source region of the multi-gate active device, adjacent to the first independent drain/source region. The dual sided contact switch has a gate region between the first independent drain/source region and the first shared drain/source region, and also between the second independent drain/source region and the second shared drain/source region.

Abstract: A dual sided contact switch has a first independent drain/source region of a multi-gate active device. The dual sided contact switch also has a first shared drain/source region of the multi-gate active device. The dual sided contact switch has a second independent drain/source region of the multi-gate active device, adjacent to the first shared drain/source region. The dual sided contact switch also has a second shared drain/source region of the multi-gate active device, adjacent to the first independent drain/source region. The dual sided contact switch has a gate region between the first independent drain/source region and the first shared drain/source region, and also between the second independent drain/source region and the second shared drain/source region.

Abstract: Certain aspects of the present disclosure generally relate to electronic circuits and, more particularly, to a switch architecture including a shunt termination path, for example to provide isolation between two terminals. More particularly, aspects of the present disclosure relate to methods for operating a shunt path to achieve various termination states. An exemplary method generally includes providing a first control signal to a plurality of transistors coupled in series between an electrical path and a termination transistor, wherein the termination transistor is coupled in series between the plurality of transistors and ground, providing a second control signal to the termination transistor, and dynamically controlling the first and second control signals to achieve a desired termination state for the electrical path.

Abstract: Certain aspects of the present disclosure generally relate to electronic circuits and, more particularly, to a switch architecture including a shunt termination path, for example to provide isolation between two terminals. More particularly, aspects of the present disclosure relate to methods for operating a shunt path to achieve various termination states. An exemplary method generally includes providing a first control signal to a plurality of transistors coupled in series between an electrical path and a termination transistor, wherein the termination transistor is coupled in series between the plurality of transistors and ground, providing a second control signal to the termination transistor, and dynamically controlling the first and second control signals to achieve a desired termination state for the electrical path.