Patents by Inventor Christopher Ngai
Christopher Ngai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11313034Abstract: In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.Type: GrantFiled: November 16, 2017Date of Patent: April 26, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Weimin Zeng, Yong Cao, Daniel Lee Diehl, Huixiong Dai, Khoi Phan, Christopher Ngai, Rongjun Wang, Xianmin Tang
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Patent number: 10927450Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.Type: GrantFiled: December 19, 2018Date of Patent: February 23, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Bencherki Mebarki, Wenhui Wang, Huixiong Dai, Christopher Ngai, Joung Joo Lee, Xianmin Tang
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Publication number: 20200199741Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.Type: ApplicationFiled: December 19, 2018Publication date: June 25, 2020Inventors: BENCHERKI MEBARKI, WENHUI WANG, HUIXIONG DAI, CHRISTOPHER NGAI, JOUNG JOO LEE, XIANMIN TANG
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Publication number: 20200135464Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a non-perpendicular angle to the plane of the surface to selectively deposit the material on a top portion of one or more features on the substrate and form an overhang extending beyond a first sidewall of the one or more features; and etching a first layer of the substrate beneath the one or more features selective to the deposited material.Type: ApplicationFiled: October 30, 2018Publication date: April 30, 2020Inventors: SREE RANGASAI V. KESAPRAGADA, JONATHAN R. BAKKE, JOUNG JOO LEE, BENCHERKI MEBARKI, CHRISTOPHER NGAI, REGINA FREED, GAURAV THAREJA, TEJINDER SINGH, JORGE PABLO FERNANDEZ
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Publication number: 20180142343Abstract: In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.Type: ApplicationFiled: November 16, 2017Publication date: May 24, 2018Inventors: Weimin ZENG, Yong CAO, Daniel Lee DIEHL, Huixiong DAI, Khoi PHAN, Christopher NGAI, Rongjun WANG, Xianmin TANG
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Publication number: 20070128538Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.Type: ApplicationFiled: February 9, 2007Publication date: June 7, 2007Inventors: KEVIN FAIRBAIRN, Michael Rice, Timothy Weidman, Christopher Ngai, Ian Latchford, Christopher Bencher, Yuxiang Wang
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Publication number: 20050263900Abstract: The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.Type: ApplicationFiled: June 29, 2005Publication date: December 1, 2005Inventors: Judy Huang, Christopher Bencher, Sudha Rathi, Christopher Ngai, Bok Kim
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Publication number: 20050112509Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.Type: ApplicationFiled: December 21, 2004Publication date: May 26, 2005Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher Ngai, Ian Latchford, Christopher Bencher, Yuxiang Wang
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Patent number: 6797646Abstract: Embodiments of the present invention provide nitrogen doping of a fluorinated silicate glass (FSG) layer to improve adhesion between the nitrogen-containing FSG layer and other layers such as barrier layers. In some embodiments, a nitrogen-containing FSG layer is deposited on a substrate in a process chamber by supplying a gaseous mixture to the process chamber. The gaseous mixture comprises a silicon-containing gas, a fluorine-containing gas, an oxygen-containing gas, and a nitrogen-containing gas. Energy is provided to the gaseous mixture to deposit the nitrogen-containing FSG layer onto the substrate. A plasma may be formed from the gaseous mixture to deposit the layer. In some embodiments, an FSG film that has been formed is doped with nitrogen by a plasma treatment using a nitrogen-containing chemistry. For example, nitrogen ashing in a damascene process may introduce nitrogen dopants into the surface of the FSG layer.Type: GrantFiled: January 12, 2001Date of Patent: September 28, 2004Assignee: Applied Materials Inc.Inventors: Christopher Ngai, Christopher D. Bencher, Joe Feng, Peter Chen
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Patent number: 6780753Abstract: Embodiments of the invention generally provide a method of forming an air gap between conductive elements of a semiconductor device, wherein the air gap has a dielectric constant of approximately 1. The air gap may generally be formed by depositing a dielectric material between the respective conductive elements, depositing a porous layer over the conductive elements and the dielectric material, and then stripping the dielectric material out of the space between the respective conductive elements through the porous layer, which leaves an air gap between the respective conductive elements. The dielectric material may be, for example, an amorphous carbon layer, the porous layer may be, for example, a porous oxide layer, and the stripping process may utilize a downstream hydrogen-based strip process, for example.Type: GrantFiled: May 31, 2002Date of Patent: August 24, 2004Assignee: Applied Materials Inc.Inventors: Ian S. Latchford, Christopher D. Bencher, Michael D. Armacost, Timothy Weidman, Christopher Ngai
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Publication number: 20030224591Abstract: Embodiments of the invention generally provide a method of forming an air gap between conductive elements of a semiconductor device, wherein the air gap has a dielectric constant of approximately 1. The air gap may generally be formed by depositing a dielectric material between the respective conductive elements, depositing a porous layer over the conductive elements and the dielectric material, and then stripping the dielectric material out of the space between the respective conductive elements through the porous layer, which leaves an air gap between the respective conductive elements. The dielectric material may be, for example, an amorphous carbon layer, the porous layer may be, for example, a porous oxide layer, and the stripping process may utilize a downstream hydrogen-based strip process, for example.Type: ApplicationFiled: May 31, 2002Publication date: December 4, 2003Applicant: Applied Materials, Inc.Inventors: Ian S. Latchford, Christopher D. Bencher, Michael D. Armacost, Timothy Weidman, Christopher Ngai
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Publication number: 20020133258Abstract: Embodiments of the present invention provide nitrogen doping of a fluorinated silicate glass (FSG) layer to improve adhesion between the nitrogen-containing FSG layer and other layers such as barrier layers. In some embodiments, a nitrogen-containing FSG layer is deposited on a substrate in a process chamber by supplying a gaseous mixture to the process chamber. The gaseous mixture comprises a silicon-containing gas, a fluorine-containing gas, an oxygen-containing gas, and a nitrogen-containing gas. Energy is provided to the gaseous mixture to deposit the nitrogen-containing FSG layer onto the substrate. A plasma may be formed from the gaseous mixture to deposit the layer. In some embodiments, an FSG film that has been formed is doped with nitrogen by a plasma treatment using a nitrogen-containing chemistry. For example, nitrogen ashing in a damascene process may introduce nitrogen dopants into the surface of the FSG layer.Type: ApplicationFiled: January 12, 2001Publication date: September 19, 2002Applicant: Applied Materials. Inc.Inventors: Christopher Ngai, Christopher D. Bencher, Joe Feng, Peter Chen
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Patent number: 5441568Abstract: An arc shaped exhaust baffle having two ends that define a gap therebetween that is not directly accessible by the exhaust plenum, that provides improved process gas flow distribution in a semiconductor process chamber, has a plurality of apertures formed therethrough and distributed about a baffle circumference. The apertures communicate with an underlying exhaust plenum to generate a uniform gas flow across the substrate surface during substrate processing. The exhaust baffle has at least one offset passage formed therethrough that may be adapted to draw process gas across a substrate surface at an acute angle relative thereto from the gap, and thereby provide an exhaust pattern that influences the process gas flow about the entire circumference of the substrate.Type: GrantFiled: July 15, 1994Date of Patent: August 15, 1995Assignee: Applied Materials, Inc.Inventors: Tom Cho, Christopher Ngai