Patents by Inventor Christopher Nordquist
Christopher Nordquist has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220367164Abstract: In an ion trap chip, an RF electrode for producing a radio-frequency ion-trapping electric field is formed in one of a plurality of metallization layers formed on a substrate and separated from each other by intermetal dielectric. At least two spans of the RF electrode are suspended between support pillars over a void defined within one or more layers of intermetal dielectric. For each span that is suspended between a first and a second support pillar, an area ATotal and an area ASupported are defined. ATotal is the total electrode area from an initial edge of the first support pillar to an initial edge of the second support pillar. ASupported is the electrode area directly underlain by the first support pillar. In each span that is suspended from a first support pillar to a second support pillar, ASupported is not more than one-half of ATotal.Type: ApplicationFiled: July 21, 2022Publication date: November 17, 2022Inventors: Matthew G. Blain, Christopher Nordquist, Peter Lukas Wilhelm Maunz
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Patent number: 11405014Abstract: The present invention relates to tunable microresonators, as well as methods of designing and tuning such resonators. In particular, tuning includes applying an electrical bias to the resonator, thereby shifting the resonant frequency.Type: GrantFiled: June 26, 2020Date of Patent: August 2, 2022Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: Darren W. Branch, Christopher Nordquist, Matt Eichenfield, James Kenneth Douglas, Aleem Siddiqui, Thomas A. Friedmann
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Patent number: 11387802Abstract: A hybrid ferroelectric/non-ferroelectric piezoelectric microresonator is disclosed. The hybrid microresonator uses a ferroelectric layer as the actuator as ferroelectric materials typically have higher actuation coefficients than non-ferroelectric piezoelectric materials. The hybrid microresonator uses a non-ferroelectric piezoelectric layer as the sensor layer as non-ferroelectric piezoelectric materials typically have higher sensing coefficients than ferroelectric materials. This hybrid microresonator design allows the independent optimization of actuator and sensor materials. This hybrid microresonator design may be used for bulk acoustic wave contour mode resonators, bulk acoustic wave solidly mounted resonators, free-standing bulk acoustic resonators, and piezoelectric transformers.Type: GrantFiled: October 21, 2019Date of Patent: July 12, 2022Assignees: National Technology & Engineering Solutions of Sandia, LLC, The United States of America as Represented by the Secretary of the ArmyInventors: Benjamin Griffin, Christopher Nordquist, Ronald G. Polcawich
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Patent number: 11056332Abstract: A radio-frequency (RF) surface ion trap chip includes an RF electrode and an integrated capacitive voltage divider in which an intermediate voltage node is capacitively connected between the RF electrode and a ground. A sensor output trace is connected to the intermediate voltage node.Type: GrantFiled: March 17, 2020Date of Patent: July 6, 2021Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: Peter Lukas Wilhelm Maunz, Matthew G. Blain, Christopher Nordquist
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Patent number: 10984976Abstract: An ion trap chip, which may be used for quantum information processing and the like, includes an integrated microwave antenna. The antenna is formed as a radiator connected by one of its ends to the center trace of a microwave transmission line and connected by its other end to a current return path through a ground trace of the microwave transmission line. The radiator includes several parallel, coplanar radiator traces connected in series. The radiator traces are connected such that they all carry electric current in the same direction, so that collectively, they simulate a single, unidirectionally flowing sheet of current. In embodiments, induced currents in underlying metallization planes are suppressed by parallel slots that extend in a direction perpendicular to the radiator traces.Type: GrantFiled: August 18, 2020Date of Patent: April 20, 2021Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: Christopher Nordquist, Matthew G. Blain, Peter Lukas Wilhelm Maunz, Christopher W. Berry
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Patent number: 10979018Abstract: A focusing interdigital transducer (IDT) and corresponding single- and dual-port piezoelectric devices are disclosed. The focusing interdigital transducer, which generates Lamé acoustic waves, permits operation at significantly higher frequencies than those possible with traditional IDTs. The focusing IDT employs multiple arced fingers formed both above and below the piezoelectric layer to improve coupling efficiency by coupling through both the e31 and e33 piezoelectric coefficients to the piezoelectric layer. By optimizing both anchor design and location, acoustic wave losses are minimized, thereby improving the device's quality factor Q. Through proper bus design and selection of the number of IDT fingers, a device's impedance can be tuned for a given application. The focusing IDTs may be used in single-port filter devices and dual-port transformer devices. The single- and dual-port devices may operate at a single frequency, at two frequencies, or over a band of frequencies.Type: GrantFiled: September 3, 2019Date of Patent: April 13, 2021Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: Aleem Siddiqui, Matt Eichenfield, Benjamin Griffin, Christopher Nordquist
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Patent number: 10418443Abstract: A platform for trapping atomic ions includes a substrate and a plurality of metallization layers that overlie the substrate. The metallization layer farthest from the substrate is a top layer patterned with electrostatic control trap electrodes and radio-frequency trap electrodes. Another metallization layer is a microwave layer patterned to define a microwave circuit. The microwave layer lies below the top layer. The microwave circuit is adapted to generate, in use, a microwave magnetic field above the electrostatic control and radio-frequency trap electrodes. The top metallization layer includes slots that, in use, are penetrated by microwave energy from the microwave circuit.Type: GrantFiled: February 3, 2017Date of Patent: September 17, 2019Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: Christopher Nordquist, Christopher W. Berry, Peter Lukas Wilhelm Maunz, Matthew G. Blain, Jonathan David Sterk, Paul J. Resnick, John F. Rembetski
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Patent number: 10141495Abstract: A radio frequency (RF) receiver comprises a passive impedance transforming voltage amplifier and a resonant, latching micromechanical switch having a deflectable bridge, an RF actuation electrode receivingly connected to the amplifier, and a DC bias electrode positioned to latch the switch in a closed position by electrostatic attraction when energized by a suitable voltage. The bridge is configured with a mechanical mode of vibration that periodically urges the switch toward the closed position.Type: GrantFiled: December 15, 2017Date of Patent: November 27, 2018Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: Christopher Nordquist, Benjamin Griffin, Christopher Dyck, Matt Eichenfield, Kenneth Wojciechowski, Roy H. Olsson, Aleem Siddiqui, Michael David Henry
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Patent number: 10020634Abstract: A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.Type: GrantFiled: December 18, 2014Date of Patent: July 10, 2018Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: Michael Wanke, Christopher Nordquist, Mark Lee
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Publication number: 20170302054Abstract: A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.Type: ApplicationFiled: December 18, 2014Publication date: October 19, 2017Inventors: Michael Wanke, Christopher Nordquist, Mark Lee
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Patent number: 9590284Abstract: The present invention related to self-limiting filters, arrays of such filters, and methods thereof. In particular embodiments, the filters include a metal transition film (e.g., a VO2 film) capable of undergoing a phase transition that modifies the film's resistivity. Arrays of such filters could allow for band-selective interferer rejection, while permitting transmission of non-interferer signals.Type: GrantFiled: May 26, 2015Date of Patent: March 7, 2017Assignee: Sandia CorporationInventors: Christopher Nordquist, Sean Michael Scott, Joyce Olsen Custer, Darin Leonhardt, Tyler Scott Jordan, Christopher T. Rodenbeck, Paul G. Clem, Jeff Hunker, Steven L. Wolfley
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Patent number: 9276557Abstract: An acoustically coupled frequency selective radio frequency (RF) device is provided. The device includes a piezoelectric substrate overlain by a plurality of electrodes. The device further includes a pair of RF input terminals at least one of which is electrically connected to at least one of the electrodes, and a pair of output RF terminals, at least one of which is electrically connected to at least one other of the electrodes. At least one of the electrodes is electromechanically reconfigurable between a state in which it is closer to a face of the piezoelectric substrate and at least one state in which it is farther from the face of the piezoelectric substrate.Type: GrantFiled: July 1, 2013Date of Patent: March 1, 2016Assignee: Sandia CorporationInventors: Christopher Nordquist, Roy H. Olsson, Sean Michael Scott, Kenneth Wojciechowski, Darren W. Branch
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MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads
Patent number: 8597985Abstract: In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predetermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.Type: GrantFiled: February 1, 2012Date of Patent: December 3, 2013Assignee: Sandia CorporationInventors: Rajen Chanchani, Christopher Nordquist, Roy H. Olsson, Tracy C. Peterson, Randy J. Shul, Catalina Ahlers, Thomas A. Plut, Gary A. Patrizi