Abstract: A method of improving a field operation that comprises a gas injection may include assessing a plurality of potential injection gases against a plurality of values of a plurality of parameters associated with a plurality of samples, where each of the plurality of potential injection gases comprises an acidic component, and where the plurality of parameters comprises fluid chemistry parameters and rock properties. The method may also include determining a proposed injection gas from among the plurality of potential injection gases for the field operation that comprises the gas injection to be performed using a first wellbore in fluidic communication with a first subterranean formation, a second wellbore in fluidic communication with the first subterranean formation, a third wellbore in fluidic communication with a second subterranean formation, or any combination thereof.

Abstract: A filter system includes a liquid filter unit, a HEPA filter unit and an air vent cover. The filter system is installed into an in-room air vent and purifies air received from a forced air system prior to its entrance into a room via the in-room air vent. In some embodiments, the filter system further includes a means for controlling a temperature of the air such that users are able to independently control air temperature in each room of a building.

Abstract: An apparatus for supporting and maneuvering a wafer comprises a handle having a gas inlet adapted to couple to a gas supply, a supporting surface coupled to the handle section including a frame structure having edge segments connecting at vertices and spoke elements extending from a center of the frame structure to the vertices, a gas supply channel coupled to the gas inlet that extends from the handle and branches into channels that run through the spoke elements, and a plurality of nozzles positioned at the vertices on the supporting surface and coupled to the channels in the spoke elements. Gas provided to the plurality of nozzles exits the nozzles in a stream directed parallel to the supporting surface and the stream of gas generates forces that enable wafers to be securely supported in a floating manner over the supporting surface without coming into direct contact with the supporting surface.

Abstract: A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.

Abstract: A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.

Abstract: A wafer processing system according to one embodiment includes a chamber housing having an exhaust and a rotatable wafer support member for supporting a wafer. A filter fan unit is contained internally within the chamber housing and includes a variable speed fan. A controller is in communication with the variable speed fan to allow the housing to be maintained at either a net positive pressure or a net negative pressure relative to a surrounding environment (e.g., the clean room) outside the housing and also the relative pressures of the chamber housing, the surrounding environment and a handler area can be monitored and controlled.

Abstract: A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.

Abstract: An apparatus for supporting and maneuvering a wafer comprises a handle having a gas inlet adapted to couple to a gas supply, a supporting surface coupled to the handle section including a frame structure having edge segments connecting at vertices and spoke elements extending from a center of the frame structure to the vertices, a gas supply channel coupled to the gas inlet that extends from the handle and branches into channels that run through the spoke elements, and a plurality of nozzles positioned at the vertices on the supporting surface and coupled to the channels in the spoke elements. Gas provided to the plurality of nozzles exits the nozzles in a stream directed parallel to the supporting surface and the stream of gas generates forces that enable wafers to be securely supported in a floating manner over the supporting surface without coming into direct contact with the supporting surface.

Abstract: A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.