Abstract: An electronic device. The electronic device includes a first electrode and a coating layer. The electronic device is fabricated on a substrate; the substrate has a cavity created in a top surface of the substrate; and the first electrode is electrically coupled to the substrate. The coating layer coats at least part of a substrate surface in the cavity, and the presence of the coating layer results in a mitigation of at least one parasitic leakage path between the first electrode and an additional electrode fabricated on the substrate.

Abstract: An electronic device. The electronic device includes a first electrode and a coating layer. The electronic device is fabricated on a substrate; the substrate has a cavity created in a top surface of the substrate; and the first electrode is electrically coupled to the substrate. The coating layer coats at least part of a substrate surface in the cavity, and the presence of the coating layer results in a mitigation of at least one parasitic leakage path between the first electrode and an additional electrode fabricated on the substrate.

Abstract: An electronic device. The electronic device includes a first electrode and a coating layer. The electronic device is fabricated on a substrate; the substrate has a cavity created in a top surface of the substrate; and the first electrode is electrically coupled to the substrate. The coating layer coats at least part of a substrate surface in the cavity, and the presence of the coating layer results in a mitigation of at least one parasitic leakage path between the first electrode and an additional electrode fabricated on the substrate.

Abstract: The present invention provides a method of depositing ruthenium films on a substrate via liquid source chemical vapor deposition wherein the source material is liquid at room temperature and utilizing process conditions such that deposition of the ruthenium films occurs at a temperature in the kinetic-limited temperature regime. Also provided is a method of depositing a thin ruthenium film on a substrate by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl) ruthenium by vaporizing the bis-(ethylcyclopentadienyl) ruthenium at a vaporization temperature of about 100-300° C. to form a CVD source material gas, providing an oxygen source reactant gas and forming a thin ruthenium film on a substrate in a reaction chamber using the CVD source material gas and the oxygen source reactant gas at a substrate temperature of about 100-500° C.

Abstract: The present invention provides a method of forming a ruthenium seed layer on a substrate comprising the steps of introducing a ruthenium-containing compound into a CVD apparatus; introducing oxygen into the CVD apparatus; maintaining an oxygen rich environment in the process chamber for the initial formation of a ruthenium oxide seed layer; vaporizing the ruthenium-containing compound; depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and annealing the deposited ruthenium oxide seed layer in a gas ambient forming a ruthenium seed layer. Also provided is a method of depositing a ruthenium thin metal film using a metalorganic precursor onto a CVD ruthenium seed layer by metalorganic chemical vapor deposition.

Abstract: The present invention provides a method of forming a ruthenium seed layer on a substrate comprising the steps of introducing a ruthenium-containing compound into a CVD apparatus; introducing oxygen into the CVD apparatus; maintaining an oxygen rich environment in the process chamber for the initial formation of a ruthenium oxide seed layer; vaporizing the ruthenium-containing compound; depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and annealing the deposited ruthenium oxide seed layer in a gas ambient forming a ruthenium seed layer. Also provided is a method of depositing a ruthenium thin metal film using a metalorganic precursor onto a CVD ruthenium seed layer by metalorganic chemical vapor deposition.

Abstract: The present invention provides a method of depositing ruthenium films on a substrate via liquid source chemical vapor deposition wherein the source material is liquid at room temperature and utilizing process conditions such that deposition of the ruthenium films occurs at a temperature in the kinetic-limited temperature regime. Also provided is a method of depositing a thin ruthenium film on a substrate by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl) ruthenium by vaporizing the bis-(ethylcyclopentadienyl) ruthenium at a vaporization temperature of about 100-300° C. to form a CVD source material gas, providing an oxygen source reactant gas and forming a thin ruthenium film on a substrate in a reaction chamber using the CVD source material gas and the oxygen source reactant gas at a substrate temperature of about 100-500° C.