Abstract: The present disclosure relates to a method that includes treating a layer of ZnTe with a metal halide, where the layer has a first grain size between 25 nm and 250 nm before the treating and the layer has a second grain size after the treating that is larger than the first grain size. In some embodiments of the present disclosure, the ZnTe may include at least one of Zn1-wCdwTe, ZnTe1-xSex, Zn1-yCdyTe1-zSez, or a combination thereof and each of w, x, y, and z are independently between 0 and 0.9, inclusively.

Abstract: Disclosed herein are methods for using cracked film lithography (CFL) for patterning transparent conductive metal grids. CFL can be vacuum- and Ag-free, and it forms more durable grids than nanowire approaches.

Abstract: The present disclosure relates to a device that includes an irregular network of interconnected ridges in physical contact with a planar substrate and a perovskite layer, where the planar substrate include a support layer and a first charge selective contact layer, the first charge selective contact layer is positioned between the support layer and the interconnected ridges, each ridge includes a second charge selective contact layer and an insulating layer, the insulating layer is positioned between the first charge selective contact layer and the second charge selective contact layer, and the perovskite layer substantially covers the plurality of interconnected ridges and the underlying planar substrate.

Abstract: The present disclosure relates to a device that includes an irregular network of interconnected ridges in physical contact with a planar substrate and a perovskite layer, where the planar substrate include a support layer and a first charge selective contact layer, the first charge selective contact layer is positioned between the support layer and the interconnected ridges, each ridge includes a second charge selective contact layer and an insulating layer, the insulating layer is positioned between the first charge selective contact layer and the second charge selective contact layer, and the perovskite layer substantially covers the plurality of interconnected ridges and the underlying planar substrate.

Abstract: Disclosed herein are methods for using cracked film lithography (CFL) for patterning transparent conductive metal grids. CFL can be vacuum- and Ag-free, and it forms more durable grids than nanowire approaches.