Abstract: A method includes obtaining a first wafer that includes a first substrate, a first n-type or undoped semiconductor layer, an active layer, and a second n-type semiconductor layer; depositing a reflector layer on the second n-type semiconductor layer; forming a first metal bonding layer on the reflector layer; bonding a second metal bonding layer on a backplane wafer to the first metal bonding layer; removing the first substrate to expose the first n-type or undoped semiconductor layer; doping selected regions of the first n-type or undoped semiconductor layer with p-type dopants to form a plurality of p-doped regions; and depositing a common anode layer on the first n-type or undoped semiconductor layer, the common anode layer electrically coupled to the plurality of p-doped regions.

Abstract: A common-anode micro-LED device includes an array of micro light-emitting diodes (micro-LEDs) characterized by a pitch less than 20 ?m and including a first common anode for the first array of micro-LEDs, and a backplane wafer including pixel drive circuits configured to individually address micro-LEDs of the array of micro-LEDs through cathodes of the micro-LEDs. Each pixel drive circuit of the pixel drive circuits includes an analog current drive circuit connected to a cathode of a micro-LED of the first array of micro-LEDs, a storage circuit for storing pixel data, and a timing control circuit configured to control the analog current drive circuit based on the pixel data.

Abstract: A red light-emitting micro-LED wafer includes a silicon substrate, a GaP buffer layer grown on the silicon substrate, a first doped (e.g., p-doped) GaP contact layer on the GaP buffer layer, an active region, and a second doped (e.g., n-doped) GaP contact layer on the active region. The active region includes a plurality of InGaP quantum barrier layers and one or more InGaAsP quantum well layers, where each of the one or more InGaAsP quantum well layers is sandwiched by two InGaP barrier layers of the plurality of InGaP barrier layers and is configured to emit red light. In some embodiments, the red light-emitting micro-LED wafer also includes a first doped AlGaP cladding layer between the first doped GaP contact layer and the active region, and a second doped AlGaP cladding layer between the second doped GaP contact layer and the active region.

Abstract: A micro-light emitting diode (micro-LED) includes a substrate, an n-type semiconductor layer on the substrate, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer and configured to emit red light. The active region includes a barrier layer characterized by a first lattice constant, and a quantum well layer next to the barrier layer. The quantum well layer is characterized by a second lattice constant greater than the first lattice constant and by an in-plane compressive strain. The active region has a lateral linear dimension equal to or less than about 10 ?m.

Abstract: Disclosed herein are techniques for improving the light emitting efficiency of micro light emitting diodes. According to certain embodiments, micro-LEDs having small physical dimensions are fabricated on III-nitride materials with semi-polar crystal lattice orientations to reduce the surface recombination of excess charge carriers that does not generate photons and to reduce the polarization induced internal field that may cause energy band shift and aggravate the Quantum-Confined Stark Effect, thereby increasing the peak quantum efficiencies and/or reducing the peak efficiency current density of the micro-LEDs.

Abstract: An optical system includes an optical waveguide, a micro light emitting diode (micro-LED) configured to emit at least partially polarized light, and a waveguide coupler configured to couple the at least partially polarized light from the micro-LED into the optical waveguide with a coupling efficiency higher than a coupling efficiency of the waveguide coupler for unpolarized light. The micro-LED includes a substrate including a hexagonal lattice and having a first surface parallel to a semi-polar plane of the hexagonal lattice, and a plurality of layers grown on the first surface. The plurality of layers includes an active layer that includes a III-nitride material and has a top surface parallel to the semi-polar plane and the first surface of the substrate, such that the light emitted by the micro-LED is at least partially polarized and can be more efficiently coupled into the optical waveguide.

Abstract: Disclosed herein are techniques for improving performance of micro light emitting diodes. According to certain embodiments, a semi-polar-oriented light emitting diode (LED) (e.g., grown on (2021) plane or (1122) plane) includes a buried p-GaN layer that is grown before the active region and the n-GaN layer of the LED are grown, such that the polarization-induced (including strain-induced piezoelectric polarization and spontaneous polarization) electrical field and the built-in depletion field in the active region are in opposite directions during normal operations, thereby reducing or minimizing the overall internal electric field that can contribute to Quantum-Confined Stark Effect. The buried p-GaN layer is grown on an n-i-n sacrificial etch junction, which can be laterally wet-etched to separate the semi-polar-oriented LED from the underlying substrate and expose the p-GaN layer for planar or vertical (rather than horizontal or lateral) activation.

Abstract: A phospholipid comprising a diacyl-substituted phosphatidyl group and a pharmaceutical composition comprising such a phospholipid for use in treatment of an allergic inflammatory condition and a method for the treatment of an allergic inflammatory condition. The phospholipid is particularly a mixture of phospholipids known as pumactant.