Abstract: Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.

Abstract: A method and apparatus for forming a layer of underfill adhesive on an integrated circuit located on a wafer surface are described. As a flip chip, the integrated circuit has electrically conductive pads, most of which have a solder ball attached thereto. A layer of underfill adhesive is then formed on the wafer surface such that at least some portion of most of the solder balls remain uncovered. The layer of underfill adhesive is partially cured and the flip chip is then mounted onto a substrate. A solder reflow operation electrically couples the flip chip and the substrate as well as fully cures the underfill adhesive.