Abstract: Non-volatile memory devices utilizing polarizable ferroelectric-semiconductor materials as the floating gate in floating-gate field-effect metal oxide transistors are described. Such materials can be annealed at temperatures less than 450° C., and fields below about 250 kV/cm can be used for changing polarization of the ferroelectric semiconductor materials, leading to devices capable of high endurance (>1010 cycles).

Abstract: A resistive switching memory comprising a first electrode and a second electrode; an active resistive switching region between the first electrode and the second electrode, the resistive switching region comprising a transition metal oxide and a dopant comprising a ligand, the dopant having a first concentration; a first buffer region between the first electrode and the resistive switching material, the first buffer region comprising the transition metal oxide and the dopant, wherein the dopant has a second concentration that is greater than the first concentration. In one embodiment, the second concentration is twice the first concentration. In one embodiment, the first buffer region is thicker than the active resistive switching region.

Abstract: A resistive switching memory comprising a first electrode and a second electrode; an active resistive switching region between the first electrode and the second electrode, the resistive switching region comprising a transition metal oxide and a dopant comprising a ligand, the dopant having a first concentration; a first buffer region between the first electrode and the resistive switching material, the first buffer region comprising the transition metal oxide and the dopant, wherein the dopant has a second concentration that is greater than the first concentration. In one embodiment, the second concentration is twice the first concentration. In one embodiment, the first buffer region is thicker than the active resistive switching region.