Patents by Inventor Christopher Raeder

Christopher Raeder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Triple layer anti-reflective hard mask
    Publication number: 20070093070
    Abstract: A method includes forming a layer of silicon oxynitride (SiON), silicon rich nitride (SiRN) or silicon nitride (Si3N4) over a layer of semiconducting material. The method further includes forming a first layer of anti-reflective material over the layer of SiON, SiRN or Si3N4 and forming a second layer of anti-reflective material over the first layer. The method also includes using the first layer, second layer and layer of SiON, SiRN or Si3N4 as a mask when etching a pattern in the layer of semiconducting material.
    Type: Application
    Filed: October 24, 2005
    Publication date: April 26, 2007
    Inventors: Kouros Ghandehari, Hirokazu Tokuno, David Matsumoto, Christopher Raeder, Christopher Foster, Weidong Qian, Minh Ngo
  • Non-critical complementary masking method for poly-1 definition in flash memory device fabrication
    Publication number: 20060223278
    Abstract: A method is disclosed for the definition of the poly-1 layer in a semiconductor wafer. A non-critical mask is used to recess field oxides in the periphery prior to poly-1 deposition by an amount equal to the final poly-1 thickness. A complimentary non-critical mask is used to permit CMP of the core to expose the tops of core oxide mesas from the shallow isolation trenches.
    Type: Application
    Filed: April 4, 2005
    Publication date: October 5, 2006
    Inventors: Unsoon Kim, Hiroyuki Kinoshita, Yu Sun, Krishnashree Achuthan, Christopher Raeder, Christopher Foster, Harpreet Sachar, Kashmir Sahota