Patents by Inventor Christopher S Ngai
Christopher S Ngai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11914299Abstract: A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.Type: GrantFiled: August 29, 2022Date of Patent: February 27, 2024Assignee: Applied Materials, Inc.Inventors: Huixiong Dai, Mangesh Ashok Bangar, Srinivas D. Nemani, Christopher S. Ngai, Ellie Y. Yieh
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Patent number: 11880137Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.Type: GrantFiled: March 23, 2023Date of Patent: January 23, 2024Assignee: Applied Materials, Inc.Inventors: Huixiong Dai, Mangesh Ashok Bangar, Srinivas D. Nemani, Ellie Y. Yieh, Steven Hiloong Welch, Christopher S. Ngai
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Publication number: 20230389441Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.Type: ApplicationFiled: August 8, 2023Publication date: November 30, 2023Applicant: Applied Materials, Inc.Inventors: Minrui YU, Wenhui WANG, Jaesoo AHN, Jong Mun KIM, Sahil PATEL, Lin XUE, Chando PARK, Mahendra PAKALA, Chentsau Chris YING, Huixiong DAI, Christopher S. NGAI
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Patent number: 11723283Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.Type: GrantFiled: May 11, 2020Date of Patent: August 8, 2023Assignee: Applied Materials, Inc.Inventors: Minrui Yu, Wenhui Wang, Jaesoo Ahn, Jong Mun Kim, Sahil Patel, Lin Xue, Chando Park, Mahendra Pakala, Chentsau Chris Ying, Huixiong Dai, Christopher S. Ngai
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Publication number: 20230229089Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.Type: ApplicationFiled: March 23, 2023Publication date: July 20, 2023Applicant: Applied Materials, Inc.Inventors: Huixiong DAI, Mangesh Ashok BANGAR, Srinivas D. NEMANI, Ellie Y. YIEH, Steven Hiloong WELCH, Christopher S. NGAI
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Patent number: 11650506Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.Type: GrantFiled: October 11, 2019Date of Patent: May 16, 2023Assignee: Applied Materials Inc.Inventors: Huixiong Dai, Mangesh Bangar, Christopher S. Ngai, Srinivas D. Nemani, Ellie Y. Yieh, Steven Hiloong Welch
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Publication number: 20220413387Abstract: A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.Type: ApplicationFiled: August 29, 2022Publication date: December 29, 2022Inventors: Huixiong DAI, Mangesh Ashok BANGAR, Srinivas D. NEMANI, Christopher S. NGAI, Ellie Y. YIEH
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Publication number: 20220367285Abstract: Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts through the selective deposition of a fill material.Type: ApplicationFiled: July 28, 2022Publication date: November 17, 2022Applicant: Applied Materials, Inc.Inventors: Wenhui Wang, Huixiong Dai, Christopher S. Ngai
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Patent number: 11437284Abstract: Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts through the selective deposition of a fill material.Type: GrantFiled: August 26, 2019Date of Patent: September 6, 2022Assignee: Applied Materials, Inc.Inventors: Wenhui Wang, Huixiong Dai, Christopher S. Ngai
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Patent number: 11429026Abstract: A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.Type: GrantFiled: March 20, 2020Date of Patent: August 30, 2022Assignee: Applied Materials, Inc.Inventors: Huixiong Dai, Mangesh Ashok Bangar, Srinivas D. Nemani, Christopher S. Ngai, Ellie Y. Yieh
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Publication number: 20220091513Abstract: A film structure for an electric field assisted bake process and methods of forming and implementing such a film structure are described herein. An example is a method for semiconductor processing. A photoresist is deposited on an underlayer disposed on a substrate. The underlayer includes carbon. The photoresist is exposed to a pattern of electromagnetic radiation. After exposing the photoresist, an electric field assisted bake is performed on the photoresist.Type: ApplicationFiled: September 18, 2020Publication date: March 24, 2022Inventors: Mangesh Ashok BANGAR, Huixiong DAI, Pinkesh Rohit SHAH, Srinivas D. NEMANI, Christopher S. NGAI, Ellie Y. YIEH
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Publication number: 20210351342Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.Type: ApplicationFiled: May 11, 2020Publication date: November 11, 2021Inventors: Minrui YUI, Wenhui WANG, Jaesoo AHN, Jong Mun KIM, Sahil PATEL, Lin XUE, Chando PARK, Mahendra PAKALA, Chentsau Chris YING, Huixiong DAI, Christopher S. Ngai
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Publication number: 20210294216Abstract: A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.Type: ApplicationFiled: March 20, 2020Publication date: September 23, 2021Inventors: Huixiong Dai, Mangesh Ashok Bangar, Srinivas D. Nemani, Christopher S. Ngai, Ellie Y. Yieh
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Patent number: 10957590Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.Type: GrantFiled: October 30, 2019Date of Patent: March 23, 2021Assignee: Applied Materials, Inc.Inventors: Wenhui Wang, Huixiong Dai, Christopher S. Ngai, Liqi Wu, Wenyu Zhang, Yongmei Chen, Hao Chen, Keith Tatseun Wong, Ke Chang
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Patent number: 10930556Abstract: Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing selective deposition of masks in a three-color process.Type: GrantFiled: September 3, 2019Date of Patent: February 23, 2021Assignee: Applied Materials, Inc.Inventors: Wenhui Wang, Huixiong Dai, Christopher S. Ngai
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Patent number: 10930555Abstract: Methods of forming and processing semiconductor devices which utilize a three-color process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing selective deposition of overlapping masks in a three-color process.Type: GrantFiled: September 3, 2019Date of Patent: February 23, 2021Assignee: Applied Materials, Inc.Inventors: Wenhui Wang, Huixiong Dai, Christopher S. Ngai
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Publication number: 20200233307Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.Type: ApplicationFiled: October 11, 2019Publication date: July 23, 2020Inventors: Huixiong DAI, Mangesh BANGAR, Christopher S. NGAI, Srinivas D. NEMANI, Ellie Y. YIEH, Steven Hiloong WELCH
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Publication number: 20200161181Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.Type: ApplicationFiled: October 30, 2019Publication date: May 21, 2020Inventors: Wenhui WANG, Huixiong DAI, Christopher S. NGAI, Liqi WU, Wenyu ZHANG, Yongmei CHEN, Hao CHEN, Keith Tatseun WONG, Ke CHANG
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Publication number: 20200075422Abstract: Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts through the selective deposition of a fill material.Type: ApplicationFiled: August 26, 2019Publication date: March 5, 2020Inventors: Wenhui Wang, Huixiong Dai, Christopher S. Ngai
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Publication number: 20200075409Abstract: Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing selective deposition of masks in a three-color process.Type: ApplicationFiled: September 3, 2019Publication date: March 5, 2020Inventors: Wenhui Wang, Huixiong Dai, Christopher S. Ngai