Abstract: The disclosure provides a method for self-perpetuating wealth generation and distribution using a reciprocating crowdfunding (RCF) methodology comprising providing an RCF module system that is configured for, generating wealth for a plurality of system participants (SPs) in an RCF cycle, wherein the plurality of system participants are arranged in a single file linear, binary tree, or matrixed tree arrangement. The RCF cycle includes a gifting cycle and a corresponding receiving cycle of equal stages.

Abstract: A comprehensive Socio-Financial, Socio-Economic, Socio-Commerce, distribution and re-distribution system comprised of various technologies adapted to achieve an (Eco) System Network engineered specifically to generate “Autonomous Money” in addition to varied forms of Finance and Commerce propagation. The generation and propagation are accomplished through a dynamic exchange of money, goods, or services, through a unique methodology, accomplished through a series of fully and/or semi-automated, synchronous, homogenous internet interactions and transactions. The purposeful outcome in one sense is to provide a comprehensive, realistic and reliable residual income type system that is organic and possible-of-attainment by the greater masses of humanity. In another aspect, the system is capable of producing considerable worldwide economic stimulation as well as realistically enabling a Universal Basic Income (UBI) without burdensome taxation.

Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.

Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifer. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.

Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.

Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifer. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.

Abstract: A method for monitoring quality of a weld, includes implementing a probabilistic statistical model, for determining a rating of the quality of the weld.

Abstract: The invention relates to a method for manufacturing a hollow body (10) of zinc plated sheet metal comprising at least one first sheet metal panel (12) assembled to a second sheet metal panel (14), said first panel (12) comprising a main portion (18) perpendicular to a parallel end portion (18), connected by a radius of curvature (20), said method comprising at least one laser welding step during which the first panel (12) is laser welded to the second panel (14) with a predetermined clearance (J), characterised in that the invention comprises at least one prior positioning step during which the panels (12, 14) are placed one on top of the another with no clearance, and in that during the laser welding step, the laser beam (27) is positioned in an area of the radius of curvature (20) of the first panel (12) corresponding to the predetermined clearance (J) between the first and second panels (12, 14), for “transparency” welding.

Abstract: To produce a hole in a part (1) made of a thermoplastic composite, the part is locally heated to a plastic forming temperature Tf and the fibres (10) of the composite are progressively moved apart at the same time as the matrix (11) in the plastic state is pushed back radially relative to the axis of the hole, firstly to form a starter hole and then to enlarge the starter hole up to the desired hole dimensions. When the hole has been produced, an operation for sizing the thickness of the part in the hole region is carried out without removal of material because of the excess material pushed back from the hole. A tool having a needle (31), the cross section of which progressively changes between a tapered end (311) suitable for producing the starter hole and a heel (312), is used to produce the hole by the method.