Patents by Inventor Christopher Saint

Christopher Saint has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BICMOS-based transceiver for millimeter wave frequency applications
    Patent number: 10382083
    Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: August 13, 2019
    Assignee: INTEGRATED DEVICE TECHNOLOGY, INC.
    Inventors: Andrea Betti-Berutto, Sushil Kumar, Shawn Parker, Jonathan L. Kennedy, Christopher Saint, Michael Shaw, James Little, Jeff Illgner
  • GAAS/SIGE-BICMOS-BASED TRANSCEIVER SYSTEM-IN-PACKAGE FOR E-BAND FREQUENCY APPLICATIONS
    Publication number: 20180375543
    Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifer. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.
    Type: Application
    Filed: August 30, 2018
    Publication date: December 27, 2018
    Inventors: Andrea BETTI-BERUTTO, Sushil KUMAR, Shawn PARKER, Jonathan L. Kennedy, Christopher Saint, Michael Shaw, James Little, Jeff Illgner
  • GAAS/SIGE-BICMOS-based transceiver system-in-package for E-band frequency applications
    Patent number: 10075207
    Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: September 11, 2018
    Assignee: INTEGRATED DEVICE TECHNOLOGY, INC.
    Inventors: Andrea Betti-Berutto, Sushil Kumar, Shawn Parker, Jonathan L. Kennedy, Christopher Saint, Michael Shaw, James Little, Jeff Illgner
  • GAAS/SIGE-BICMOS-Based Transceiver System-in-Package for E-Band Frequency Applications
    Publication number: 20160323008
    Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifer. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.
    Type: Application
    Filed: May 2, 2016
    Publication date: November 3, 2016
    Inventors: Andrea Betti-Berutto, Sushil Kumar, Shawn Parker, Jonathan L. Kennedy, Christopher Saint, Michael Shaw, James Little, Jeff Illgner